Kumar, Satyendra (Troy, MI, US)
Kumar, Devendra (Rochester Hills, MI, US)
Tasch, Dominique (Mietingen, DE)
Stroebel, Raimund (Neu-Ulm, DE)

Plaque It!

11/384126

10/07/2008

03/17/2006

Images are available in PDF form when logged in. To view PDFs, Login  or  Create Account (Free!)

Click for automatic bibliography generation

BTU International, Inc. (N. Billerica, MA, US)

219/121.59

219/121.44, 219/121.43, 219/121.48, 315/111.81

B23K10/00

219/121.59, 315/111.51, 219/745, 219/121.44, 219/121.54, 219/121.43, 315/111.21, 219/121.41, 219/121.4, 219/121.57, 315/111.81

3432296	PLASMA SINTERING	March, 1969	McKinnon et al.
3612686	METHOD AND APPARATUS FOR GAS ANALYSIS UTILIZING A DIRECT CURRENT DISCHARGE	October, 1971	Braman et al.
3731047	PLASMA HEATING TORCH	May, 1973	Mullen et al.
4004934	Sintered dense silicon carbide	January, 1977	Prochazka
4025818	Wire ion plasma electron gun	May, 1977	Giguere et al.
4090055	Apparatus for manufacturing an optical fibre with plasma activated deposition in a tube	May, 1978	King
4147911	Method for sintering refractories and an apparatus therefor	April, 1979	Nishitani
4151034	Continuous gas plasma etching apparatus	April, 1979	Yamamoto et al.
4207286	Seeded gas plasma sterilization method	June, 1980	Gut Boucher	422/21
4213818	Selective plasma vapor etching process	July, 1980	Lemons et al.
4230448	Burner combustion improvements	October, 1980	Ward et al.
4265730	Surface treating apparatus utilizing plasma generated by microwave discharge	May, 1981	Hirose et al.
4307277	Microwave heating oven	December, 1981	Maeda et al.
4339326	Surface processing apparatus utilizing microwave plasma	July, 1982	Hirose et al.
4404456	Micro-arc welding/brazing of metal to metal and metal to ceramic joints	September, 1983	Cann
4473736	Plasma generator	September, 1984	Bloyet et al.
4479075	Capacitatively coupled plasma device	October, 1984	Elliott
4500564	Method for surface treatment by ion bombardment	February, 1985	Enomoto
4504007	Solder and braze fluxes and processes for using the same	March, 1985	Anderson, Jr. et al.
4609808	Plasma generator	September, 1986	Bloyet et al.
4611108	Plasma torches	September, 1986	Leprince et al.
4624738	Continuous gas plasma etching apparatus and method	November, 1986	Westfall et al.
4664937	Method of depositing semiconductor films by free radical generation	May, 1987	Ovshinsky et al.
4666775	Process for sintering extruded powder shapes	May, 1987	Kim et al.
4687560	Method of synthesizing a plurality of reactants and producing thin films of electro-optically active transition metal oxides	August, 1987	Tracy
4698234	Vapor deposition of semiconductor material	October, 1987	Ovshinsky
4760230	Method and an apparatus for heating glass tubes	July, 1988	Hassler
4767902	Method and apparatus for the microwave joining of ceramic items	August, 1988	Palaith et al.
4772770	Apparatus for joining ceramics by microwave	September, 1988	Matsui et al.
4792348	Method of forming glass bonded joint of beta-alumina	December, 1988	Pekarsky
4840139	Apparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition process	June, 1989	Takei
4871581	Carbon deposition by ECR CVD using a catalytic gas	October, 1989	Yamazaki
4877589	Nitrogen fixation by electric arc and catalyst	October, 1989	O'Hare
4877938	Plasma activated deposition of an insulating material on the interior of a tube	October, 1989	Rau et al.
4883570	Apparatus and method for enhanced chemical processing in high pressure and atmospheric plasmas produced by high frequency electromagnetic waves	November, 1989	Efthimion et al.
4888088	Ignitor for a microwave sustained plasma	December, 1989	Slomowitz
4891488	Processing apparatus and method	January, 1990	Davis et al.
4893584	Large area microwave plasma apparatus	January, 1990	Doehler et al.
4897285	Method and apparatus for PCVD internal coating a metallic pipe by means of a microwave plasma	January, 1990	Wilhelm
4908492	Microwave plasma production apparatus	March, 1990	Okamoto et al.
4919077	Semiconductor producing apparatus	April, 1990	Oda et al.
4924061	Microwave plasma torch, device comprising such a torch and process for manufacturing powder by the use thereof	May, 1990	Labat et al.
4943417	Apparatus for dry sterilization of medical devices and materials	July, 1990	Jacob	422/292
4946547	Method of preparing silicon carbide surfaces for crystal growth	August, 1990	Palmour et al.
4956590	Vehicular power steering system	September, 1990	Phillips
4963709	Method and device for microwave sintering large ceramic articles	October, 1990	Kimrey, Jr.
4972799	Microwave plasma chemical vapor deposition apparatus for mass-producing functional deposited films	November, 1990	Misumi et al.
5003152	Microwave transforming method and plasma processing	March, 1991	Matsuo
5010220	Process and apparatus for heating bodies at high temperature and pressure utilizing microwave energy	April, 1991	Apte et al.
5015349	Low power density microwave discharge plasma excitation energy induced chemical reactions	May, 1991	Suib et al.
5017404	Plasma CVD process using a plurality of overlapping plasma columns	May, 1991	Paquet et al.
5023056	Plasma generator utilizing dielectric member for carrying microwave energy	June, 1991	Aklufi et al.
5058527	Thin film forming apparatus	October, 1991	Ohta et al.
5072650	Power steering system with improved stability	December, 1991	Phillips
5074112	Microwave diesel scrubber assembly	December, 1991	Walton et al.
5085885	Plasma-induced, in-situ generation, transport and use or collection of reactive precursors	February, 1992	Foley et al.
5087272	Filter and means for regeneration thereof	February, 1992	Nixdorf
5103715	Power steering system	April, 1992	Phillips
5120567	Low frequency plasma spray method in which a stable plasma is created by operating a spray gun at less than 1 MHz in a mixture of argon and helium gas	June, 1992	Frind et al.
5122633	Method and apparatus for radiation microwave energy into material containing water or mixed with water	June, 1992	Moshammer et al.
5131993	Low power density plasma excitation microwave energy induced chemical reactions	July, 1992	Suib et al.
5164130	Method of sintering ceramic materials	November, 1992	Holcombe et al.
5202541	Microwave heating of workpieces	April, 1993	Patterson et al.
5222448	Plasma torch furnace processing of spent potliner from aluminum smelters	June, 1993	Morgenthaler et al.
5223308	Low temperature plasma enhanced CVD process within tubular members	June, 1993	Doehler
5224117	Gas lasers, in particular CO.sub.2 lasers	June, 1993	Kruger et al.
5227695	Device for coupling microwave energy with an exciter and for distributing it therealong for the purpose of producing a plasma	July, 1993	Pelletier et al.
5271963	Elimination of low temperature ammonia salt in TiCl.sub.4 NH.sub.3 CVD reaction	December, 1993	Eichman et al.
5276297	Melting disposal apparatus for injection needles	January, 1994	Nara
5276386	Microwave plasma generating method and apparatus	January, 1994	Watanabe et al.
5277773	Conversion of hydrocarbons using microwave radiation	January, 1994	Murphy
5284544	Apparatus for and method of surface treatment for microelectronic devices	February, 1994	Mizutani et al.
5304766	Methods and apparatus for simultaneously treating a plurality of samples in a moist medium	April, 1994	Baudet et al.
5307892	Electronically controlled power steering system	May, 1994	Phillips
5310426	High-speed film forming method by microwave plasma chemical vapor deposition (CVD) under high pressure and an apparatus therefor	May, 1994	Mori
5311906	Preload mechanism for power steering apparatus	May, 1994	Phillips
5316043	Preload mechanism for power steering apparatus	May, 1994	Phillips
5321223	Method of sintering materials with microwave radiation	June, 1994	Kimrey, Jr. et al.
5349154	Diamond growth by microwave generated plasma flame	September, 1994	Harker et al.
5366764	Environmentally safe methods and apparatus for depositing and/or reclaiming a metal or semi-conductor material using sublimation	November, 1994	Sunthankar
5370525	Microwave combustion enhancement device	December, 1994	Gordon
5423180	Filter regenerating apparatus and method for an internal combustion engine	June, 1995	Nobue et al.
5435698	Bootstrap power steering systems	July, 1995	Phillips
5449887	Thermal insulation for high temperature microwave sintering operations and method thereof	September, 1995	Holcombe et al.
5487811	Process for preparation of semiconductor device	January, 1996	Iizuka
5505275	Power steering system	April, 1996	Phillips
5514217	Microwave plasma CVD apparatus with a deposition chamber having a circumferential wall comprising a curved moving substrate web and a microwave applicator means having a specific dielectric member on the exterior thereof	May, 1996	Niino et al.
5520740	Process for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the same	May, 1996	Kanai et al.
5521360	Apparatus and method for microwave processing of materials	May, 1996	Johnson et al.
5523126	Method of continuously forming a large area functional deposited film by microwave PCVD	June, 1996	Sano et al.
5527391	Method and apparatus for continuously forming functional deposited films with a large area by a microwave plasma CVD method	June, 1996	Echizen et al.
5536477	Pollution arrestor	July, 1996	Cha et al.
5597456	Method for producing medical materials	January, 1997	Maruyama et al.
5607509	High impedance plasma ion implantation apparatus	March, 1997	Schumacher et al.
5616373	Plasma CVD method for producing a diamond coating	April, 1997	Karner et al.
5637180	Plasma processing method and plasma generator	June, 1997	Gosain et al.
5645897	Process and device for surface-modification by physico-chemical reactions of gases or vapors on surfaces, using highly-charged ions	July, 1997	Andra
5651825	Plasma generating apparatus and plasma processing apparatus	July, 1997	Nakahigashi et al.
5662965	Method of depositing crystalline carbon-based thin films	September, 1997	Deguchi et al.
5670065	Apparatus for plasma treatment of fine grained materials	September, 1997	Bickmann et al.
5671045	Microwave plasma monitoring system for the elemental composition analysis of high temperature process streams	September, 1997	Woskov et al.
5682745	Bootstrap power steering systems	November, 1997	Phillips
5688477	Process for reacting dissociated zircon with gaseous hydrogen fluoride	November, 1997	Nel
5689949	Ignition methods and apparatus using microwave energy	November, 1997	DeFreitas et al.
5712000	Large-scale, low pressure plasma-ion deposition of diamondlike carbon films	January, 1998	Wei et al.
5714010	Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same	February, 1998	Matsuyama et al.
5715677	Diesel NO.sub.x reduction by plasma-regenerated absorbend beds	February, 1998	Wallman et al.
5734501	Highly canted retroreflective cube corner article	March, 1998	Smith
5735451	Method and apparatus for bonding using brazing material	April, 1998	Mori et al.
5741364	Thin film formation apparatus	April, 1998	Kodama et al.
5755097	Bootstrap power steering systems	May, 1998	Phillips
5794113	Simultaneous synthesis and densification by field-activated combustion	August, 1998	Munir et al.
5796080	Microwave apparatus for controlling power levels in individual multiple cells	August, 1998	Jennings et al.
5808282	Microwave sintering process	September, 1998	Apte et al.
5828338	Thyratron switched beam steering array	October, 1998	Gerstenberg
5841237	Production of large resonant plasma volumes in microwave electron cyclotron resonance ion sources	November, 1998	Alton
5847355	Plasma-assisted microwave processing of materials	December, 1998	Barmatz et al.
5848348	Method for fabrication and sintering composite inserts	December, 1998	Dennis
5859404	Method and apparatus for plasma processing a workpiece in an enveloping plasma	January, 1999	Wei et al.
5868871	Method and apparatus for carburizing, quenching and tempering	February, 1999	Yokose et al.
5874705	Method of and apparatus for microwave-plasma production	February, 1999	Duan
5904993	Joint body of aluminum and silicon nitride and method of preparing the same	May, 1999	Takeuchi et al.
5939026	Apparatus for processing gas by electron beam	August, 1999	Seki et al.
5945351	Method for etching damaged zones on an edge of a semiconductor substrate, and etching system	August, 1999	Mathuni
5961773	Plasma processing apparatus and plasma processing method using the same	October, 1999	Ichimura et al.
5961871	Variable frequency microwave heating apparatus	October, 1999	Bible et al.
5973289	Microwave-driven plasma spraying apparatus and method for spraying	October, 1999	Read et al.
5976429	Process for producing dense, self-sintered silicon carbide/carbon-graphite composites	November, 1999	Chen et al.
5980843	Method and apparatus in catalytic reactions	November, 1999	Silversand
5980999	Method of manufacturing thin film and method for performing precise working by radical control and apparatus for carrying out such methods	November, 1999	Goto et al.
5989477	Process for the chemical modification of solids containing alkyl groups	November, 1999	Berger
5993612	Process for purifying a gas and apparatus for the implementation of such a process	November, 1999	Rostaing et al.
5998774	Electromagnetic exposure chamber for improved heating	December, 1999	Joines et al.
6011248	Method and apparatus for fabrication and sintering composite inserts	January, 2000	Dennis
6028393	E-beam/microwave gas jet PECVD method and apparatus for depositing and/or surface modification of thin film materials	February, 2000	Izu et al.
6038854	Plasma regenerated particulate trap and NO.sub.x reduction system	March, 2000	Penetrante et al.
6039834	Apparatus and methods for upgraded substrate processing system with microwave plasma source	March, 2000	Tanaka et al.
6054693	Microwave technique for brazing materials	April, 2000	Barmatz et al.
6054700	Process and apparatus for joining thick-walled ceramic parts	April, 2000	Rokhvarger et al.
6096389	Method and apparatus for forming a deposited film using a microwave CVD process	August, 2000	Kanai
6097015	Microwave pressure vessel and method of sterilization	August, 2000	McCullough et al.	219/686
6101969	Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof	August, 2000	Niori et al.
6103068	Process for antifelting finishing of wool using a low-temperature plasma treatment	August, 2000	Merten et al.
6121109	Method of forming hemispherical grain polysilicon over lower electrode capacitor	September, 2000	Chen et al.
6122912	Electro-hydraulic power steering systems having improved efficiency	September, 2000	Phillips
6131386	Single mode resonant cavity	October, 2000	Trumble
6132550	Apparatuses for desposition or etching	October, 2000	Shiomi
6139656	Electrochemical hardness modification of non-allotropic metal surfaces	October, 2000	Wilkosz et al.
6149985	High-efficiency plasma treatment of imaging supports	November, 2000	Grace et al.
6152254	Feedback and servo control for electric power steering system with hydraulic transmission	November, 2000	Phillips
6153868	Microwave application device, particularly for baking products on a metal carrier	November, 2000	Marzat
6183689	Process for sintering powder metal components	February, 2001	Roy et al.
6186090	Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor	February, 2001	Dotter, II et al.
6189482	High temperature, high flow rate chemical vapor deposition apparatus and related methods	February, 2001	Zhao et al.
6204190	Method for producing an electronic device	March, 2001	Koshido
6204606	Slotted waveguide structure for generating plasma discharges	March, 2001	Spence et al.
6224836	Device for exciting a gas by a surface wave plasma and gas treatment apparatus incorporating such a device	May, 2001	Moisan et al.
6228773	Synchronous multiplexed near zero overhead architecture for vacuum processes	May, 2001	Cox
6238629	Apparatus for plasma treatment of a gas	May, 2001	Barankova et al.
6248206	Apparatus for sidewall profile control during an etch process	June, 2001	Herchen et al.
6264812	Method and apparatus for generating a plasma	July, 2001	Raaijmakers et al.
6284202	Device for microwave removal of NOx from exhaust gas	September, 2001	Cha et al.
6287980	Plasma processing method and plasma processing apparatus	September, 2001	Hanazaki et al.
6287988	Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device	September, 2001	Nagamine et al.
6297172	Method of forming oxide film	October, 2001	Kashiwagi
6297595	Method and apparatus for generating a plasma	October, 2001	Stimson et al.
6329628	Methods and apparatus for generating a plasma torch	December, 2001	Kuo et al.
6342195	Method for synthesizing solids such as diamond and products produced thereby	January, 2002	Roy et al.
6345497	NOx reduction by electron beam-produced nitrogen atom injection	February, 2002	Penetrante
6348158	Plasma processing with energy supplied	February, 2002	Samukawa
6358361	Plasma processor	March, 2002	Matsumoto
6362449	Very high power microwave-induced plasma	March, 2002	Hadidi et al.
6365885	Microwave processing in pure H fields and pure E fields	April, 2002	Roy et al.
6367412	Porous ceramic liner for a plasma source	April, 2002	Ramaswamy et al.
6370459	Feedback and servo control for electric power steering systems	April, 2002	Phillips
6372304	Method and apparatus for forming SiC thin film on high polymer base material by plasma CVD	April, 2002	Sano et al.
6376027	Method for crystallizing lithium transition metal oxide thin film by plasma treatment	April, 2002	Lee et al.
6383333	Protective member for inner surface of chamber and plasma processing apparatus	May, 2002	Haino et al.
6383576	Method of producing a microcrystal semiconductor thin film	May, 2002	Matsuyama
6388225	Plasma torch with a microwave transmitter	May, 2002	Blum et al.
6392350	Plasma processing method	May, 2002	Amano
6407359	Method of producing individual plasmas in order to create a uniform plasma for a work surface, and apparatus for producing such a plasma	June, 2002	Lagarde et al.
6488112	Electrohydraulic steering system	December, 2002	Kleist
6512216	Microwave processing using highly microwave absorbing powdered material layers	January, 2003	Gedevanishvili et al.
6522055	Electron-emitting source, electron-emitting module, and method of manufacturing electron-emitting source	February, 2003	Uemura et al.
6575264	Precision electro-hydraulic actuator positioning system	June, 2003	Spadafora
6592664	Method and device for epitaxial deposition of atoms or molecules from a reactive gas on a deposition surface of a substrate	July, 2003	Frey et al.
6610611	Method of removing diamond coating and method of manufacturing diamond-coated body	August, 2003	Liu et al.
6712298	Method and device for crushing glass bodies by means of microwave heating	March, 2004	Kohlberg et al.
6717368	Plasma generator using microwave	April, 2004	Sakamoto et al.
6841006	Atmospheric substrate processing apparatus for depositing multiple layers on a substrate	January, 2005	Barnes et al.
6841201	Apparatus and method for treating a workpiece using plasma generated from microwave radiation	January, 2005	Shanov et al.
6870124	Plasma-assisted joining	March, 2005	Kumar et al.
20010027023	Organic substance removing methods, methods of producing semiconductor device, and organic substance removing apparatuses	October, 2001	Ishihara et al.
20010028919	Method of removing diamond coating and method of manufacturing diamond-coated body	October, 2001	Liu et al.
20020034461	Plasma assisted processing of gas	March, 2002	Segal
20020036187	Plasma processing device	March, 2002	Ishll et al.
20020100751	Apparatus and method for atmospheric pressure reactive atom plasma processing for surface modification	August, 2002	Carr
20020124867	Apparatus and method for surface cleaning using plasma	September, 2002	Kim et al.
20020135308	Plasma process and apparatus	September, 2002	Janos et al.
20020140381	Lamp utilizing fiber for enhanced starting field	October, 2002	Golkowski et al.
20020190061	Device for adjusting the distribution of microwave energy density in an applicator and use of this device	December, 2002	Gerdes et al.
20020197882	TEMPERATURE SPIKE FOR UNIFORM NITRIDIZATION OF ULTRA-THIN SILICON DIOXIDE LAYERS IN TRANSISTOR GATES	December, 2002	Niimi et al.
20030071037	Microwave sintering furnace and microwave sintering method	April, 2003	Sato et al.
20030111334	Process for preparing carbon nanotubes	June, 2003	Dodelet et al.
20030111462	Burning furnace,burnt body producing method, and burnt body	June, 2003	Sato et al.
20040001295	Plasma generation and processing with multiple radiation sources	January, 2004	Kumar et al.
20040004062	Plasma-assisted joining	January, 2004	Kumar et al.
20040070347	Plasma generating apparatus using microwave	April, 2004	Nishida et al.
20040089631	Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly	May, 2004	Blalock et al.
20040107796	Plasma-assisted melting	June, 2004	Kumar et al.
20040107896	Plasma-assisted decrystallization	June, 2004	Kumar et al.
20040118816	Plasma catalyst	June, 2004	Kumar et al.

DE222348	May, 1985
DE19542352	May, 1997
DE10005146	August, 2001
EP0335675	October, 1989			Large area microwave plasma apparatus
EP0228864	March, 1991			Process for sintering extruded powder shapes.
EP0420101	April, 1991			Microwave plasma generating apparatus.
EP0435591	July, 1991			Conversion of methane using microwave radiation.
EP0436361	July, 1991			Method for improving the activity maintenance of plasma initiator
EP0520719	May, 1996			Counterweight attachment technique
EP0670666	June, 1998			Plasma generating apparatus and plasma processing apparatus
EP0724720	May, 2000			CONTINUOUS, REAL TIME MICROWAVE PLASMA ELEMENT SENSOR
EP1093846	April, 2001			DEVICE FOR DECOMPOSING ORGANIC HALOGEN COMPOUND AND FLUID HEATING DEVICE
EP1427265	June, 2004			Device and method for coating a substrate and substrate coating
JP56140021	November, 1981			MANUFACTURE OF SILICON CARBIDE THIN FILM
JP57119164	July, 1982			COMBINED IGNITION ENGINE BY LASER AND MICROWAVE PLASMA
JP58025073	February, 1983			ELECTRODELESS DISCHARGE LAMP
JP59103348	June, 1984
JP59169053	September, 1984			ELECTRODELESS ELECTRIC-DISCHARGE LAMP
JP62000535	January, 1987			CONTINUOUS PLASMA TREATMENT APPARATUS
JP0474858	March, 1992
JP06345541	December, 1994			MICROWAVE SINTERING METHOD AND FURNACE THEREFOR
JP07153405	June, 1995			PLASMA APPLICATION DEVICE
JP08217558	August, 1996			CERAMIC BONDING DEVICE
JP08281423	October, 1996			METHOD AND EQUIPMENT FOR FLUXLESS SOLDERING
JP09017597	January, 1997			DEVICE AND METHOD FOR GENERATING PLASMA
JP09023458	January, 1997			TIME DIVISION SWITCH
JP09027459	January, 1997			PROCESSING EQUIPMENT FOR SEMICONDUCTOR DEVICE
JP09027482	January, 1997			PLASMA ETCHING APPARATUS
JP09078240	March, 1997			HARD CARBON FILM FORMING DEVICE AND PRODUCTION OF HARD CARBON FILM FORMING SUBSTRATE
JP09102400	April, 1997			PROCESSING DEVICE USING MICROWAVE PLASMA
JP09102488	April, 1997			ALUMINA MICROWAVE INTRODUCTION WINDOW AND ITS MANUFACTURE
JP09111461	April, 1997			FILM FORMING OR ETCHING DEVICE
JP09137274	May, 1997			FORMATION OF THIN FILM BY RADICAL REGULATION MICROFABRICATING METHOD AND DEVICE THEREFOR
JP09157048	June, 1997			COMPOSITE CERAMIC AND ITS PRODUCTION
JP09223596	August, 1997			MICROWAVE PLASMA GENERATOR
JP09235686	September, 1997			METHOD FOR CLEANING SURFACE FOR SOLDER JOINING, MODIFYING METHOD THEREFOR AND SOLDERING METHOD THEREFOR
JP09251971	September, 1997			METHOD OF REMOVING ORGANIC COMPD. FROM SUBSTANCE SURFACE
JP09295900	November, 1997			APPARATUS FOR TREATING SUBSTRATE WITH MICROWAVE PLASMA
JP10066948	March, 1998			CRUDE REFUSE TREATING DEVICE
JP10081588	March, 1998			SEMICONDUCTOR DIAMOND AND ITS FORMATION
JP10081970	March, 1998			FORMATION OF THIN COATING
JP10087310	April, 1998			PRODUCTION OF FULLERENE AND DEVICE THEREFOR
JP10204641	August, 1998			DIAMONDLIKE CARBON THIN FILM DEPOSITING DEVICE
JP10259420	September, 1998			METHOD FOR REDUCING OXIDE OF METALLIC PLATE
JP10294306	November, 1998			PLASMA ETCHING DEVICE, PLASMA ETCHING METHOD AND PLASMA CLEANING METHOD FOR PLASMA ETCHING DEVICE
JP11031599	February, 1999			PREHEATING METHOD FOR PLASMA-PROCESSING DEVICE, AND PLASMA-PROCESSING DEVICE
JP11106947	April, 1999			SURFACE MODIFYING METHOD OF METALLIC SHEET
JP11145116	May, 1999			MICROWAVE PLASMA PROCESSING APPARATUS AND OPPOSED ELECTRODES USING THE SAME
JP11186222	July, 1999			ECR ETCHING DEVICE
JP11228290	August, 1999			DIAMOND GROWING APPARATUS UTILIZING MICROWAVE
JP11265885	September, 1999			DEPOSITION OF FILM THROUGH PLASMA-ASSISTED PROCESS
JP11273895	October, 1999			PLASMA GENERATING DEVICE USING MICROWAVE
JP11297266	October, 1999			MASS SPECTROMETER AND ION SOURCE
JP2000012526	January, 2000			PLASMA PROCESSING APPARATUS AND METHOD
JP2000173989	June, 2000			PLASMA TREATING APPARATUS
JP2000203990	July, 2000			METHOD FOR GROWING CRYSTAL THIN FILM AT LOW TEMPERATURE BY PLASMA SPUTTERING
JP2000269182	September, 2000			METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
JP2000288382	October, 2000			APPARATUS FOR DECOMPOSING ORGANOHALOGEN COMPOUND
JP2000306901	November, 2000			PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD
JP2000310874	November, 2000			DEVELOPER FOR DEVELOPING ELECTROSTATIC CHARGE IMAGE
JP2000310876	November, 2000			DEVELOPER FOR DEVELOPING ELECTROSTATIC CHARGE IMAGE
JP2000317303	November, 2000			PLASMA TREATMENT APPARATUS AND METHOD
JP2000323463	November, 2000			PLASMA PROCESSING METHOD
JP2000348897	December, 2000			PLASMA PROCESSING APPARATUS
JP2001013719	January, 2001			ELECTROSTATIC CHARGE IMAGE DEVELOPING DEVELOPER
JP2001053069	February, 2001			PLASMA PROCESSING METHOD AND APPARATUS
JP2001058127	March, 2001			APPARATUS FOR GENERATING PLASMA IN CHAMBER BY MICROWAVE EXCITATION
JP2001093871	April, 2001			PLASMA ARC CUTTING APPARATUS, MANUFACTURING PROCESS AND DEVICE
JP2001149754	June, 2001			METHOD AND DEVICE FOR TREATING WASTE GAS CONTAINING VOLATILE ORGANIC MATERIAL
JP2001149918	June, 2001			TREATING APPARATUS OF WASTEWATER INCLUDING VOLATILE ORGANIC SUBSTANCE AND TREATING METHOD THEREOF
JP2001196420	July, 2001			SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND DEVICE
JP2001303252	October, 2001			MATERIAL GENERATING METHOD AND APPARATUS THEREOF
JP2001332532	November, 2001			DEVICE AND METHOD FOR ASHING RESIST
JP2001351915	December, 2001			Ta1-XTiXO HYBRID DIELECTRIC THIN FILM AND ITS MANUFACTURING METHOD
JP2002022135	January, 2002			METHOD AND EQUIPMENT FOR WASTE-OIL COMBUSTION
JP2002028487	January, 2002			CATALYST FOR GENERATING ATOMIC OXYGEN, PRODUCING METHOD THEREOF AND METHOD FOR GENERATING ATOMIC OXYGEN
JP2002069643	March, 2002			METHOD FOR PRODUCING CARBON NANOTUBE
JP2002075960	March, 2002			METHOD OF ETCHING CARBONIC MATERIAL
JP2002126502	May, 2002			AIR-TIGHT SUPPORTING DEVICE OF DISCHARGE TUBE FOR DECOMPOSITION DEVICE OF ORGANIC HALOGENATED COMPOUND
JP2002273161	September, 2002			METHOD AND APPARATUS FOR DECOMPOSING NITROGEN OXIDE
JP2002273168	September, 2002			DEVICE AND METHOD FOR REMOVAL OF HAZARD
JP2003075070	March, 2003			CONTINUOUS CALCINATION FURNACE, AND MANUFACTURING METHOD FOR SINTERED PRODUCT USING THE SAME
JP2003264057	September, 2003			ELECTROMAGNETIC WAVE CONTINUOUS FURNACE, ELECTROMAGNETIC WAVE LEAKAGE PREVENTING DEVICE, AND CONTINUOUS BAKING METHOD OF BAKED THING USING ELECTROMAGNETIC WAVE
WO/1995/011442	April, 1995			CONTINUOUS, REAL TIME MICROWAVE PLASMA ELEMENT SENSOR
WO/1996/006700	March, 1996			NANOSCALE PARTICLES, AND USES FOR SAME
WO/1996/038311	December, 1996			METHOD AND APPARATUS FOR CLEANING SURFACES WITH A GLOW DISCHARGE PLASMA AT ONE ATMOSPHERE OF PRESSURE
WO/1997/013141	April, 1997			MICROWAVE PLASMA MONITORING SYSTEM FOR THE ELEMENTAL COMPOSITION ANALYSIS OF HIGH TEMPERATURE PROCESS STREAMS
WO/2001/055487	August, 2001			CARBON FIBER MANUFACTURING VIA PLASMA TECHNOLOGY
WO/2001/058223	August, 2001			PLASMA PROCESSING SYSTEM AND METHOD
WO/2001/082332	November, 2001			LAMP UTILIZING FIBER FOR ENHANCED STARTING FIELD
WO/2002/026005	March, 2002			PLASMA TORCH, ESPECIALLY A PLASMA POSITIVE POLE TORCH
WO/2002/061165	August, 2002			DEVICE FOR CERAMIC-TYPE COATING OF A SUBSTRATE
WO/2002/061171	August, 2002			METHOD FOR THE PRODUCTION OF A FUNCTIONAL COATING BY MEANS OF A HIGH-FREQUENCY ICP PLASMA BEAM SOURCE
WO/2002/062114	August, 2002			PLASMA UNIT AND METHOD FOR GENERATION OF A FUNCTIONAL COATING
WO/2002/062115	August, 2002			PLASMA INSTALLATION AND METHOD FOR PRODUCING A FUNCTIONAL COATING
WO/2002/067285	August, 2002			DEVICE AND METHOD FOR DISCHARGING DIELECTRIC SURFACES
WO/2003/018862	March, 2003			METHOD FOR PRODUCING A NANOSTRUCTURED COATING
WO/2003/028081	April, 2003			METHOD FOR ETCHING STRUCTURES IN AN ETCHING BODY BY MEANS OF A PLASMA
WO/2003/095058	November, 2003			PLASMA-ASSISTED MULTI-PART PROCESSING
WO/2003/095089	November, 2003			PLASMA-ASSISTED FORMATION OF CARBON STRUCTURES
WO/2003/095090	November, 2003			PLASMA-ASSISTED CARBURIZING
WO/2003/095130	November, 2003			PLASMA-ASSISTED SINTERING
WO/2003/095591	November, 2003			PLASMA-ASSISTED DOPING
WO/2003/095699	November, 2003			PLASMA-ASSISTED ENHANCED COATING
WO/2003/095807	November, 2003			PLASMA-ASSISTED ENGINE EXHAUST TREATMENT
WO/2003/096369	November, 2003			PLASMA-ASSISTED GAS PRODUCTION
WO/2003/096370	November, 2003			METHODS AND APPARATUS FOR FORMING AND USING PLASMA JETS
WO/2003/096380	November, 2003			PLASMA-ASSISTED NITROGEN SURFACE-TREATMENT
WO/2003/096381	November, 2003			PLASMA-ASSISTED PROCESSING IN A MANUFACTURING LINE
WO/2003/096382	November, 2003			METHODS AND APPARATUS FOR PLASMA PROCESSING CONTROL
WO/2003/096383	November, 2003			CAVITY SHAPES FOR PLASMA-ASSISTED PROCESSING
WO/2003/096747	November, 2003			PLASMA HEATING APPARATUS AND METHODS
WO/2003/096749	November, 2003			PLASMA-ASSISTED HEAT TREATMENT
WO/2003/096766	November, 2003			PLASMA CONTROL USING PHASE AND/OR FREQUENCY OF MULTIPLE RADIATION SOURCES
WO/2003/096768	November, 2003			PLASMA ASSISTED DRY PROCESSING
WO/2003/096770	November, 2003			PLASMA-ASSISTED COATING
WO/2003/096771	November, 2003			PLASMA GENERATION AND PROCESSING WITH MULTIPLE RADIATION SOURCES
WO/2003/096772	November, 2003			PLASMA-ASSISTED DECRYSTALLIZATION
WO/2003/096773	November, 2003			PLASMA-ASSISTED JOINING
WO/2003/096774	November, 2003			PLASMA CATALYST
WO/2004/050939	June, 2004			PLASMA-ASSISTED MELTING

“Carbonitriding,” Treat All Metals, Inc., 2 pages—http://www.treatallmetals.com/carbon.htm.
“Carburizing,” Treat All Metals, Inc.—http://www.treatallmetals.com/gas.htm, 2 pages.
“Classical Plasma Applications,” 2 pages (2002)—http://www.plasma.iinpe.br/English/Classical—Applications.htm.
“Classification of Cast Iron”—Key to Steel—Article—http://www.key-to-steel.com/Articles/Art63.htm, 3 pages (1999).
“Controlled Atmospheres Sinter-Hardening,,” Sarnes Ingenieure, 2 pages, http://www.space-ctrl.de/de/2002/06/399.php (2002).
“Heat Treatment of Steels—The Processes,” AZoM.com, 9 pages, (2002)—www.azom.com.
“How A Blast Furnace Works—The Blast Furnace Plant,” AISI Learning Center, 7 pages. http://www.steel.org/learning/howmade/blast—furnace.htm., Undated.
“How Is Steel Made,” Answer Discussion, 6 pages—http://ourworld.compuserve.com/homepages/Dyaros/stlmanuf.htm, Undated.
“IRC in Materials Processing: Advanced Melting, Atomisation, Powder and Spray Forming, Plasma Melting—Operation of a Plasma Furnace,” University of Birmingham website, 3 pages—http://www.irc.bham.ac.uk/theme1/plasma/furnace.htm, Undated.
“Micro-fabricated Palladium-Silver Membrane for Hydrogen Separation and Hydro/Dehydrogenation Reactions,” Research Education Group webpage, 5 pages—http://utep.el.utwente.nl/tt/projects/sepmem/—Undated.
“Microwave Welding of Plastics,” TWI World Centre for Materials Joining Technology, 2 pages, (Aug. 2002)—http://www.twi.co.uk/j32k/protected/band—3/ksab001.htm.
“Microwave Welding,” EWi WeldNet, 1 page—(2003) http://www.ferris.edu/cot/accounts/plastics/htdocs/Prey/Microwave%20Homepage.htm.
“Microwave Welding,” Welding and Joining Information Network, 3 pages (Nov. 2002)—http://www.ewi.org/technologies/plastics/microwave.asp.
“Nitriding,” Treat All Metals, Inc., 2 pages—Undated—http://www.treatallmetals.com/nitrid.htm.
“Novel Plasma Catalysts Significantly Reduce NOx from Diesel Engines,” US Department of Energy research summary, 2 pages (Apr. 2001)—http://www.ott.doe.gov/success.html.
“Optoelectronic Packaging Applications,” March Plasma Systems, Product Description, 2 pages (2002)—http://www.marchplasma.com/opto—app.htm.
“Plasma Applications,” Coalition for Plasma Science, 2 pages (1999, 2000)—http://www.plasmacoalition.org/applications.htm.
“Plasma Carburizing,” 1 page—Undated, http://www.ndkinc.co.jp/ndke04.html.
“Plasma Direct Melting Furnace,” Materials Magic, Hitachi Metals Ltd., 3 pages—Undated, http://www.hitachi-metals.co.jp/e/prod/prod07/p07—2—02.html.
“Plasma Nitride Process Description,” Northeast Coating Technologies, 2 pages, Undated, www.northeastcoating.com.
“Powder Metallurgy—Overview of the Powder Metallurgy Process,” AZoM.com, 3 pages (2002)—http://www.azom.com/details.asp?ArticleID=1414.
“Printed Circuit Board (PCB) Plasma Applications,” March Plasma Systems product descriptions, 2 pages (2002)—http://www.marchplasma.com/pcb—app.01.htm.
“Surface Hardening” Services Description for AHS Corp., 5 pages, Undated—http://www.ahscorp.com/surfaceh.html.
“testMAS: Pressure Sintering,” 11 pages, Undated—http://cybercut.berkley.edu/mas2/processes/sinter—pressure.
“Using Non-Thermal Plasma Reactor to Reduce NOx Emissions from CIDI Engines,” Office of Energy Efficiency and Renewable Energy, Office of Transportation, 1 page (Apr. 1999).
“Welding Plastic Parts,” Business New Publishing Company, 4 pages (Nov. 2000)—http://www.assemblymag.com/Common/print—article.asp?rID=E455512C17534C31B96D.
Accentus Corporate Overview, 3 pages—http://www.accentus.co.uk/ipco/html/techenv6—txt—fr.html (2003).
Agrawal et al., “Grain Growth Control in Microwave Sintering of Ultrafine WC-Co Composite Powder Compacts,” Euro PM99 Conference, Sintering, Turino, Italy, 8 pages (1999).
Agrawal et al., “Microwave Sintering of Commercial WC/Co Based Hard Metal Tools,” Euro PM99 Conference, Sintering, Turino, Italy, 8 pages (1999).
Agrawal, “Metal Parts from Microwaves,” Materials World 7(11):672-673 (1999).
Agrawal, “Microwave Processing of Ceramics,” Current Opinion in Solid State and Materials Science 3:480-485 (Oct. 1998).
Ahmed et al., “Microwave Joining of Alumina and Zirconia Ceramics,” IRIS Research Topics 1998, 1 page (1988).
Air Liquide, “Heat Treatment—Gas Quenching,”—http://www.airliquide.com/en/business/industry/metals/applications/heat—treatment/quenching.asp, 1 page (2000).
Alexander et al., “Electrically Conductive Polymer Nanocomposite Materials,” AFRL's Materials and Manufacturing Directorate, Nonmetallic Materials Division, Polymer Branch, Wright-Patterson AFB OH—http://www.afrlhorizons.com/Briefs/Sept02/ML0206.html , 2 pages (Sep. 2002).
Al-Shamma'a et al., “Microwave Atmospheric Plasma for Cleaning Exhaust Gases and Particulates,” Future Car Congress, Washington, Jun. 3-5, 2002 (1 page).
Alton et al., “A High-Density, RF Plasma-Sputter Negative Ion Source,” The 8th Intl. Conf. on Heavy-Ion Accelerator Technology, Argonne Natl. Lab., Oct. 5-9, 1998, Poster Presentation (3 pages).
Anklekar et al., “Microwave Sintering and Mechanical Properties of PM Copper Steel,” Powder Metallurgy 44(4):355-362 (2001).
Batanov et al., “Plasmachemical Deposition of Thin Films in a Localized Free-Space Microwave Discharge,” Technical Physics 38(6):475-479 (Jun. 1993).
Cheng et al., “Microwave Processing of WC-Co Composities And Ferroic Titanates” Mat. Res. Innovat. 1(1):44-52 (Jun. 1997).
Cheng, J., “Fabricating Transparent Ceramics by Microwave Sintering,” Am. Ceramic Soc. Bull. 79(9):71-74 (2000).
Circle Group Holdings, Inc., “StarTech Environmental Corp.”—http://www.crgq.com/cgiweb/HTML/eMentor—Companies/startech.html, 9 pages.
Collin, in: Foundations for Microwave Engineering, 2d Ed., IEEE Press, NY, pp. 180-192 (2001).
Egashira et al., “Decomposition of Trichloroethylene by Microwave-Induced Plasma Generated from SiC Whiskers,” J. Electrochem. Soc., 145(1):229-235 (Jan. 1998).
Fincke, “Hydrogen Separation Membrane,—Advanced Gas Separation: H2 Separation,” Summary of research proposal, 1 page (2003).
Ford 1.3L Catalytic Converter (1988-1989) product description—http://catalyticconverters.com/FO13L43778889.html, 1 page, Undated.
Ford Contour Catalytic Converter (1995-1996) product description—http://www.all-catalytic-converters.com/ford-contour-converter.html, 2 pages, Undated.
Fraunhofer ILT, “Plasma-Reactors for Aftertreatment of Automobile Exhaust Gas,” Fraunhofer-Gesellschaft—http://www.ilt.fhg.de/eng/jb01-s35.html, 1 page (2002).
French, “The Plasma Waste Converter—From Waste Disposal to Energy Creation,” The International Chemical Weapons Demilitarization Conference, Gifu City, Japan (May 22-24, 2001)—http://www.arofe.army.mil/Conferences/CWC2001/French.htm, 1 page.
Gao et al., “Superfast Densification of Oxide/Oxide Ceramic Composites,” J. Am. Ceram. Soc. 82(4)1061-1063 (1999).
Gedevanishvili et al., “Microwave Combustion Synthesis And Sintering of Intermetallics and Alloys,” J. Mat. Sci. Lett. 18(9):665-668 (1999).
General Eastern, “Semiconductor Manufacturing—Using the HygroTwin 2850 to Reduce Costs, Improve Quality,”, 3 pages, www.generaleastern.net (1997).
George, “The Catalytic Converter,” 5 pages, (2002)—http://krioma.net/articles/Catalytic%20Converter/Catalytic%20Converter.htm.
GlassTesseract.Org website, “Tech Procedures and Tips: Exhaust Manifolds and Catalytic Converters Removal—and Installation”, 4 pages (2003). http://glasstesseract.org/tech/catalytic.html.
Hackh's Chemical Dictionary, 3rd edition, J. Grant, Ed., McGraw Hill Book Co., NY, pp. 174-175 (1994).
Honda Automobile News Press Release, “Honda Introduces Its First Two Clean Air Vehicles, the Civic Ferio LEV and Partner 1.6 LEV,” 3 pages (Feb. 1997)—http://world.honda.com/news/1997/4970217a.html.
Honda Civic CX Catalytic Converter, (1996-2000) 1 page—http://www.catalyticconverters.com/HOCIVICCX4349600.html, Undated.
Hsu et al., “Palladium-Coated Kieselguhr for Simultaneous Separation and Storage of Hydrogen,” Westinghouse Savannah River Company, U.S. Dept. of Commerce, National Technical Information Service, 14 pages (2001).
Japanese Advanced Environment Equipment, “Mitsubishi Graphite Electrode Type Plasma Furnace,” 3 pages, Undated—http://nett21.unep.or.jp/JSIM—DATA/WASTE/WASTE—3/html/Doc—467.html.
Johnson , Faculty Biography webpage, Dept. ofMaterials Science & Engineering, Northwestern University, 2 pages—http://www.matsci.northerwestern.edu/faculty/dlj.html, Undated.
Kalyanaraman et al., “Synthesis and Consolidation of Iron Nanopowders,” NanoStructured Materials 10(8):1379-1392 (1998).
Karger, Scientific Staff Research Areas for KTP Company, 2 pages (Nov. 2002)—http://wwwfb10.upb.de/KTP/KTP-ENG/Staff/Karger/body—karger.html.
Kong et al., “Nuclear-Energy-Assisted Plasma Technology for Producing Hydrogen,” Nuclear Energy Research Initiative Research Proposal, 4 pages (2002).
Lewis, in: Hawley's Condensed Chemical Dictionary, 12th ed., pp. 230-232, Van Nostrand Reinhold, NY (1993).
Lucas, “Welding Breakthrough: Generating and Handling a Microwave Powered Plasma,” Australian Industry News, Information & Suppliers, 7 pages (Sep. 2001)—http://www.industry/search.com.au/features/microwave.asp.
Lucas, “Welding Using Microwave Power Supplies,” Faculty webpage, 1 page—http://www.liv.ac.uk/EEE/research/cer/project6.htm, Undated.
Luggenholscher et al., “Investigations on Electric Field Distributions in a Microwave Discharge in Hydrogen,” Institute fur Laser- und Plasmaphysik, Univsitat Essen, Germany, 4 pages, Undated.
March Plasma Systems, product descriptions,2 pages (2002)—http://www.marchplasma.com/micro—app.htm, Undated.
Moss et al., “Experimental Investigation of Hydrogen Transport Through Metals,” Experiment Description, Los Alamos National Library, 5 pages—Undated. http://www.education.lanl.gov/RESOURCES/h2/dye/education.html.
Paglieri et al., “Palladium Alloy Composite Membranes for Hydrogen Separation,” 15th Annual Conf. Fossil Energy Matter, Knoxville, TN (2001), 5 pages.
Peelamedu et al., “Anisothermal Reaction Synthesis of Garnets, Ferrites, and Spinels In Microwave Field,” Materials Research Bulletin 36:2723-2739 (Dec. 2001).
PerfectH2 PE8000 Series Product Description, Palladium Diffusion Hydrogen Purifier For High Flow Rate MOCVD Applications, Matheson Tri.Gas, 2 pages (2002).
Photonics Directory, Definition for Thyratron, (Laurin Publishing), 2 pages http://www.photonics.com/dictionary/.
Pingel, “About What Every P/A Should Know About P/M,” Powder Metallurgy Co., 9 pages—http://www.powdermetallurgyco.com/pm—about.htm.
Plasma Science and Technology, “Plasmas for Home, Business and Transportation,” 4 pages—Undated. http://www.plasmas.org/rot-home.htm.
Roy et al., “Definitive Experimental Evidence for Microwave Effects: Radically New Effects of Separated E and H Fields, Such As Decrystallization of Oxides in Seconds,” Materials Research Innovations 6(3):129-140 (2002).
Roy et al., “Full Sintering of Powdered-Metal Bodies In A Microwave Field,” Nature 399:668-670 (Jun. 17, 1999).
Roy et al., “Major phase transformations and magnetic property changes caused by electromagnetic fields at microwave frequencies,” J. Mat. Res. 17(12):3008-3011 (2002).
Roy et al., “Microwave Processing: Triumph of Applications-Driven Science in WC-Composites And Ferroic Titanates,” Ceramic Transactions 80:3-26, (1997).
Rusanov, Introduction to the Hydrogen Energy & Plasma Technologies Institute: Russian Research Centre Kurchatov Institute, 13 pages, Undated—http://www.kiae.ru/eng/str/ihept/oiivept.htm.
Samant et al., “Glow Discharge Plasma Nitriding of AI 6063 Samples and Study of Their Surface Hardness,” Metallofiz. Noveishe Tekhnol. 23(3):325-333 (2001).
Sato et al., “Surface Modification of Pure Iron by rf Plasma Nitriding with dc Bias Voltage Impression,” Hyomen Gijutsu 48(3):317-323 (1997) (English Abstract).
Saveliev et al., “Effect of Cathode End Caps and a Cathode Emissive Surface on Relativistic Magnetron Operation,” IEEE Transactions on Plasma Science 28:3.478-484 (Jun. 2000).
Saville, in: Iron and Steel, Chapter 6, pp. 16-22, Wayland Publ., England (1976).
SC/Tetra Engine Manifold Application, 2 pages (2001)—http://www.sctetra.com/applications/01—manifold.htm.
Shulman, “Microwaves In High-Temperature Processes,” GrafTech Intl. Ltd., 8 pages (Mar. 2003) http://www.industrialheating.com/CDA/ArticleInformation/features/BNP—Features—Item/0,2832,94035,00.html.
Slone et al., “NOx Reduction For Lean Exhaust Using Plasma Assisted Catalysis,” Noxtech Inc., 5 pages (2000)—http://www.osti.gov/fcvt/deer2000/bhattpa.pdf.
Stockwell Rubber Company, Inc., “Conductive Silicone Rubber Compounds Product Selection Guide,” Electrically Conducive Materials Chart, 3 pages, Undated—http://www.stockwell.com/electrically—conducive—produc.htm.
Sumitomo Heavy Industries, Ltd., “Spark Plasma Sintering,” 3 pages (2001)—http://www.shi.co.jp/sps/eng/.
Takizawa et al. “Synthesis of inorganic materials by 28 GHz Microwave Irradiation,” Transactions of the Materials Research Society of Japan 27(1):51-54 (2002).
Taube et al., “Advances in Design of Microwave Resonance Plasma Source,” American Institute of Chemical Engineering, 2004 Annual Meeting, Presentation (Nov. 2004).
Thomas et al., “Non-Thermal Plasma Aftertreatment of Particulates—Theoretical Limits and Impact on Reactor Design,” SAE Spring Fuels and Lubes Conference, Paris, France, 27 pages—Jun. 19-22, 2000—http://www.aeat.co.uk/electrocat/sae/saepaper.htm.
Toyota Motor Sales, “Emission Sub Systems—Catalytic Converter,” 10 pages, Undated.
Uchikawa et al., “New Technique of Activating Palladium Surface for Absorption of Hydrogen or Deuterium,” Japanese J. Appl. Phys. 32:5095-5096, Part 1, No. 11A (Nov. 1993).
Wang et al., “Densification of A12O3 Powder Using Spark Plasma Sintering,” J. Mater. Res., 15(4):982-987 (Apr. 2000).
Way et al., “Palladium/Copper Alloy Composite Membranes for High Temperature Hydrogen Separation from Coal-Derived Gas Streams,” Research Grant Report, Dept. of Chemical Engineering, Colorado School of Mines, 3 pages (1999).
Willert-Porada, M., “Alternative Sintering Methods” 1 page Abstract dated Nov. 8, 20001, http://www.itap.physik.uni-stuttgart.de/˜gkig/neu/english/welcome.php?/˜gkig/neu/abstracts/abstract—willert-porada.html.
Wolf et al., “The Amazing Metal Sponge: Simulations of Palladium-Hydride,” 2 pages, Undated—http://www.psc.edu/science/Wolf/Wolf.html.
Xie et al., “Effect of Rare Earths in Steels on the Thermochemical Treatments and the Functional Mechanisms of the Rare Earths,” Rare Metals Materials and Engineering 26(1):52-55 (Feb. 1997) (English Abstract).
Yahoo Canada—Autos, “Catalytic Converter Answer2,” 4 pages (2001)—http://ca.autos.yahoo.com/maintain/catalytic—converteranswer2.html.
International Search Report issued on Jul. 23, 2003, in PCT/US03/14037.
International Preliminary Examination Report issued on Apr. 20, 2005, in PCT/US03/014037.
International Search Report issued on Aug. 15, 2003, PCT/US03/14124.
International Search Report issued on Sep. 10, 2003, in PCT/US03/14132.
International Search Report issued on Aug. 14, 2003, in PCT/US03/14052.
International Search Report issued on Aug. 14, 2003, in PCT/US03/14054.
Examination Report issued on Feb. 24, 2004, in PCT/US03/14054.
International Search Report issued on May 10, 2004, in PCT/US03/14036.
International Search Report issued on Jun. 14, 2005, in PCT/US03/38459.
International Search Report issued on Aug. 9, 2003, in PCT/US03/14053.
Written Opinion issued on Dec. 22, 2003, in PCT/US03/14053.
Examination Report issued on Apr. 26, 2004, in PCT/US03/14053.
International Search Report issued on Feb. 25, 2004, in PCT/US03/14034.
International Search Report issued on Sep. 19, 2003, in PCT/US03/14039.
International Search Report issued on Aug. 29, 2003, in PCT/US03/14038.
International Search Report issued on Dec. 30, 2003, in PCT/US03/14133.
International Search Report issued on Aug. 28, 2003, in PCT/US03/14035.
International Search Report issued on Jul. 29, 2003, in PCT/US03/14040.
International Search Report issued on Sep. 10, 2003, in PCT/US03/14134.
International Search Report issued on Aug. 29, 2003, in PCT/US03/14122.
International Search Report issued on Sep. 30, 2003, in PCT/US03/14130.
International Search Report issued on May 24, 2004, in PCT/US03/14055.
International Search Report issued on May 26, 2004, in PCT/US03/14137.
International Search Report issued on Aug. 29, 2003, in PCT/US03/14123.
Written Opinion issued on Dec. 22, 2003, in PCT/US03/14123.
Examination Report issued on Apr. 26, 2004, in PCT/US03/14123.
International Search Report issued on Aug. 29, 2003, in PCT/US03/14121.
International Search Report issued on Sep. 16, 2003, in PCT/US03/14136.
Quayle Action mailed Apr. 19, 2005 for U.S. Appl. No. 10/449,600.
International Search Report issued on May 25, 2004, in PCT/US03/14135.
Quayle Action issued on Apr. 19, 2004, in U.S. Appl. No. 10/430,414.
Office Action issued on May 18, 2004, in U.S. Appl. No. 10/430,426.
Reply to Office Action filed on Nov. 18, 2004, in U.S. Appl. No. 10/430,426.
Office Action issued on Feb. 24, 2005, in U.S. Appl. No. 10/430,426.
Office Action in Chinese Appl. No. 03810272.2, dated Feb. 26, 2006.
Response to Quayle Action filed May 12, 2005 for U.S. Appl. No. 10/449,600.
Office Action mailed Jul. 27, 2005 for U.S. Appl. No. 10/449,600.
Response filed Oct. 27, 2005 for U.S. Appl. No. 10/449,600.
Office Action mailed Jan. 26, 2006 for U.S. Appl. No. 10/449,600.
Office Action mailed Nov. 10, 2005 for U.S. Appl. No. 10/430,416.
Office Action mailed Jul. 27, 2005 for U.S. Appl. No. 10/430,415.
Response to Office Action dated Dec. 21, 2005 for U.S. Appl. No. 10/430,415.
Letter from Chinese Associate enclosing office action in CN Appl. No. 03810271.4, dated Dec. 27, 2005.
Preliminary Amendment filed Jul. 15, 2005 in U.S. Appl. No. 11/182,172.
Specification and Claims are filed in PCT/US05/39642 on Nov. 1, 2005.
Specification and Claims as filed in U.S. Appl. No. 11/348,104 on Mar. 17, 2006.
International Preliminary Examination Report completed on Feb. 22, 2005, in PCT/US03/014037.
Office Action in Chinese Appl. No. 03810268.4, issued Mar. 24, 2006.
Office Action in Chinese Appl. No. 03810272.2, issued Feb. 10, 2006, with cover letter dated Feb. 24, 2006.
Response to Office Action filed Apr. 25, 2006 for U.S. Appl. No. 10/449,600.
Response to Office Action filed Apr. 10, 2006 for U.S. Appl. No. 10/430,416.
Office Action mailed Apr. 5, 2006 for U.S. Appl. No. 10/430,415.
Office Action in Chinese Appl. No. 03810273.0, issued Mar. 24, 2006.
Specification and Claims as filed in PCT/US05/39642 on Nov. 1, 2005.

Paschall, Mark H.

Weingarten, Schurgin, Gagnebin & Lebovici LLP

CROSS-REFERENCE OF RELATED APPLICATIONS

This application is a continuation-in-part of U.S. application Ser. No. 10/430,426, filed on May 7, 2003, now U.S. Pat. No. 7,132,621, which claims priority to U.S. Provisional Patent Application No. 60/378,693, filed May 8, 2002, 60/430,677, filed Dec. 4, 2002, and No. 60/435,278, filed Dec. 23, 2002, all of which are fully incorporated herein by reference. The present application also claims priority to Provisional Application Ser. No. 60/663,295, filed on Mar. 18, 2005, which is also incorporated by reference in its entirety.

We claim:

1. A method of cleaning a part, comprising: flowing a gas into a first multi-mode processing cavity having a movable reflective surface portion in or near said cavity; igniting a plasma by subjecting the gas in the cavity to electromagnetic radiation having a frequency less than about 333 GHz in the presence of at least one passive plasma catalyst comprising a material that is at least electrically semi-conductive; moving the reflective surface portion to vary locations of maximum electric field vectors within the processing cavity for each mode, to control the time of ignition of the plasma; and exposing one or more objects to the plasma.

2. The method of claim 1, further including injecting a second gas into the plasma.

3. The method of claim 2, wherein the second gas is hydrogen.

4. The method of claim 2, wherein the object is Cr₂O₃ and wherein the one or more objects are cleaned by exposure to the plasma.

5. The method of claim 1, wherein the gas is argon.

6. The method of claim 1, wherein the one or more objects are sterilized by exposure to the plasma.

7. The method of claim 1, wherein the one or more objects include a surgical instrument.

8. The method of claim 1, wherein the reflective surface is moved rotationally, translationally, longitudinally, or in any combination thereof.

9. The method of claim 1, wherein the reflective surface is an “L”-shaped, metallic object or a cylindrical object.

10. The method of claim 1, wherein the at least one passive plasma catalyst is an electrically conductive fiber.

11. The method as recited in claim 1, wherein the electromagnetic radiation is introduced into the cavity via at least one of a rotating waveguide joint and a flexible waveguide.

12. The method as recited in claim 11, wherein said rotating waveguide or said flexible waveguide is mounted in the cavity.

13. The method as recited in claim 11, wherein said rotating waveguide or said flexible waveguide include an end portion that extends into the cavity.

14. The method as recited in claim 13, wherein said end portion of said rotating waveguide or said flexible waveguide is periodically or continually moved.

15. The method as recited in claim 14, wherein said end portion is twisted about an axis.

16. The method as recited in claim 1, wherein said at least one passive plasma catalyst ignites the plasma at different locations within the cavity.

17. The method as recited in claim 16, wherein said at least one passive plasma catalyst ignites the plasma at different locations sequentially by selectively introducing the at least one passive plasma catalyst at the different locations.

18. The method as recited in claim 1 further comprising: providing a second multi-mode processing cavity fluidly coupled to and proximate the first multi-mode processing cavity; flowing a gas into the second multi-mode processing cavity; and using the plasma ignited in the first multi-mode processing cavity to ignite a plasma in the second multi-mode processing cavity.

FIELD OF THE INVENTION

This invention relates to methods and apparatus for igniting, modulating, and sustaining plasmas from gases using plasma catalysts and for cleaning and sterilizing objects with that plasma.

BACKGROUND OF THE INVENTION

It is known that a plasma can be ignited by subjecting a gas to a sufficient amount of microwave radiation. Plasma ignition, however, is usually easier at gas pressures substantially less than atmospheric pressure. However, vacuum equipment, which is required to lower the gas pressure, can be expensive, as well as slow and energy-consuming. Moreover, the use of such equipment can limit manufacturing flexibility.

BRIEF SUMMARY OF A FEW ASPECTS OF THE INVENTION

Plasma catalysts for initiating, modulating, and sustaining a plasma may be provided. The plasma catalyst can be passive or active. A passive plasma catalyst can include any object capable of inducing a plasma by deforming a local electric field (e.g., an electromagnetic field) consistent with this invention, without necessarily adding additional energy. An active plasma catalyst, on the other hand, is any particle or high energy wave packet capable of transferring a sufficient amount of energy to a gaseous atom or molecule to remove at least one electron from the gaseous atom or molecule in the presence of electromagnetic radiation. In both cases, a plasma catalyst can improve, or relax, the environmental conditions required to ignite a plasma.

Method and apparatus for forming a plasma are also provided. In one embodiment consistent with this invention, the method includes flowing a gas into a multi-mode processing cavity and igniting the plasma by subjecting the gas in the cavity to electromagnetic radiation having a frequency less than about 333 GHz in the presence of at least one passive plasma catalyst comprising a material that is at least electrically semi-conductive.

In another embodiment consistent with this invention, methods and apparatus are provided for igniting a plasma by subjecting a gas to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a plasma catalyst comprising a powder.

In yet another embodiment consistent with this invention, additional methods and apparatus are provided for forming a plasma using a dual-cavity system. The system can include a first ignition cavity and a second cavity in fluid communication with each other. The method can include: (i) subjecting a gas in the first ignition cavity to electromagnetic radiation having a frequency less than about 333 GHz, such that the plasma in the first cavity causes a second plasma to form in the second cavity, and (ii) sustaining the second plasma in the second cavity by subjecting it to additional electromagnetic radiation.

Additional plasma catalysts, and methods and apparatus for igniting, modulating, and sustaining a plasma consistent with this invention are provided. Methods of cleaning and sterilizing parts utilizing a plasma ignited consistently with this invention are provided.

BRIEF DESCRIPTION OF THE DRAWINGS

Further aspects of the invention will be apparent upon consideration of the following detailed description, taken in conjunction with the accompanying drawings, in which like reference characters refer to like parts throughout, and in which:

FIG. 1 shows a schematic diagram of an illustrative plasma system consistent with this invention;

FIG. 1A shows an illustrative embodiment of a portion of a plasma system for adding a powder plasma catalyst to a plasma cavity for igniting, modulating, or sustaining a plasma in a cavity consistent with this invention;

FIG. 2 shows an illustrative plasma catalyst fiber with at least one component having a concentration gradient along its length consistent with this invention;

FIG. 3 shows an illustrative plasma catalyst fiber with multiple components at a ratio that varies along its length consistent with this invention;

FIG. 4 shows another illustrative plasma catalyst fiber that includes a core underlayer and a coating consistent with this invention;

FIG. 5 shows a cross-sectional view of the plasma catalyst fiber of FIG. 4, taken from line 5 - 5 of FIG. 4, consistent with this invention;

FIG. 6 shows an illustrative embodiment of another portion of a plasma system including an elongated plasma catalyst that extends through ignition port consistent with this invention;

FIG. 7 shows an illustrative embodiment of an elongated plasma catalyst that can be used in the system of FIG. 6 consistent with this invention;

FIG. 8 shows another illustrative embodiment of an elongated plasma catalyst that can be used in the system of FIG. 6 consistent with this invention; and

FIG. 9 shows an illustrative embodiment of a portion of a plasma system for directing radiation into a radiation chamber consistent with this invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

This invention may relate to methods and apparatus for initiating, modulating, and sustaining a plasma for a variety of applications, including heat-treating, synthesizing and depositing carbides, nitrides, borides, oxides, and other materials, doping, carburizing, nitriding, and carbonitriding, sintering, multi-part processing, joining, decrystallizing, making and operating furnaces, gas exhaust-treating, waste-treating, incinerating, scrubbing, ashing, growing carbon structures, generating hydrogen and other gases, forming electrodeless plasma jets, plasma processing in manufacturing lines, sterilizing, cleaning, etc.

This invention can be used for controllably generating heat and for plasma-assisted processing to lower energy costs and increase heat-treatment efficiency and plasma-assisted manufacturing flexibility.

Therefore, a plasma catalyst for initiating, modulating, and sustaining a plasma is provided. The catalyst can be passive or active. A passive plasma catalyst can include any object capable of inducing a plasma by deforming a local electric field (e.g., an electromagnetic field) consistent with this invention without necessarily adding additional energy through the catalyst, such as by applying a voltage to create a spark. An active plasma catalyst, on the other hand, may be any particle or high energy wave packet capable of transferring a sufficient amount of energy to a gaseous atom or ion to remove at least one electron from the gaseous atom or molecule, in the presence of electromagnetic radiation.

The following commonly owned, concurrently filed U.S. patent applications are hereby incorporated by reference in their entireties: U.S. patent application Ser. No. 10/513,221, U.S. patent application Ser. No. 10/513,393, PCT Application Serial No. PCT/US03/14132, U.S. patent application Ser. No. 10/513,394, U.S. patent application Ser. No. 10/513,305, U.S. patent application Ser. No. 10/513,607, U.S. patent application Ser. No. 10/449,600, U.S. Pat. No. 6,870,124, PCT Application Serial No. PCT/US03/14034, U.S. patent application Ser. No. 10/430,416, U.S. patent application Ser. No. 10/430,415, PCT Application Serial No. PCT/US03/14133, U.S. patent application Ser. No. 10/513,606, U.S. patent application Ser. No. 10/513,309, U.S. patent application Ser. No. 10/513,220, PCT Application Serial No. PCT/US03/14122, U.S. patent application Ser. No. 10/513,397, U.S. patent application Ser. No. 10/513,605, PCT Application Serial No. PCT/US03/14137, PCT Application Serial No. PCT/US03/14121, Ser. No. 10/513,604, and PCT Application Serial No. PCT/US03/14135.

Illustrative Plasma System

FIG. 1 shows illustrative plasma system 10 consistent with one aspect of this invention. In this embodiment, cavity 12 is formed in a vessel that is positioned inside radiation chamber (i.e., applicator) 14 . In another embodiment (not shown), the vessel 12 and radiation chamber 14 are the same, thereby eliminating the need for two separate components. The vessel in which cavity 12 is formed can include one or more radiation-transmissive insulating layers to improve its thermal insulation properties without significantly shielding cavity 12 from the radiation.

In one embodiment, cavity 12 is formed in a vessel made of ceramic. Due to the extremely high temperatures that can be achieved with plasmas consistent with this invention, a ceramic capable of operating at about 3,000 degrees Fahrenheit can be used. The ceramic material can include, by weight, 29.8% silica, 68.2% alumina, 0.4% ferric oxide, 1% titania, 0.1% lime, 0.1% magnesia, 0.4% alkalies, which is sold under Model No. LW-30 by New Castle Refractories Company, of New Castle, Pa. It will be appreciated by those of ordinary skill in the art, however, that other materials, such as quartz, and those different from the one described above, can also be used consistent with the invention.

In one successful experiment, a plasma was formed in a partially open cavity inside a first brick and topped with a second brick. The cavity had dimensions of about 2 inches by about 2 inches by about 1.5 inches. At least two holes were also provided in the brick in communication with the cavity: one for viewing the plasma and at least one hole for providing the gas. The size of the cavity can depend on the desired plasma process being performed. Also, the cavity should at least be configured to prevent the plasma from rising/floating away from the primary processing region.

Cavity 12 can be connected to one or more gas sources 24 (e.g., a source of argon, nitrogen, hydrogen, xenon, krypton) by line 20 and control valve 22 , which may be powered by power supply 28 . Line 20 may be tubing (e.g., between about 1/16 inch and about ¼ inch, such as about ⅛″). Also, if desired, a vacuum pump can be connected to the chamber to remove fumes that may be generated during plasma processing. In one embodiment, gas can flow in and/or out of cavity 12 through one or more gaps in a multi-part vessel. Thus, gas ports consistent with this invention need not be distinct holes and can take on other forms as well, such as many small distributed holes.

A radiation leak detector (not shown) was installed near source 26 and waveguide 30 and connected to a safety interlock system to automatically turn off the radiation (e.g., microwave) power supply if a leak above a predefined safety limit, such as one specified by the FCC and/or OSHA (e.g., 5 mW/cm ² ), was detected.

Radiation source 26 , which may be powered by electrical power supply 28 , directs radiation energy into chamber 14 through one or more waveguides 30 . It will be appreciated by those of ordinary skill in the art that source 26 can be connected directly to cavity 12 , thereby eliminating waveguide 30 . The radiation energy entering cavity 12 is used to ignite a plasma within the cavity. This plasma can be substantially sustained and confined to the cavity by coupling additional radiation with the catalyst. Also, the frequency of the radiation (e.g., microwave radiation) is believed to be non-critical in many applications.

Radiation energy can be supplied through circulator 32 and tuner 34 (e.g., 3-stub tuner). Tuner 34 can be used to minimize the reflected power as a function of changing ignition or processing conditions, especially after the plasma has formed because microwave power, for example, will be strongly absorbed by the plasma.

As explained more fully below, the location of radiation-transmissive cavity 12 in chamber 14 may not be critical if chamber 14 supports multiple modes, and especially when the modes are continually or periodically mixed. As also explained more fully below, motor 36 can be connected to mode-mixer 38 for making the time-averaged radiation energy distribution substantially uniform throughout chamber 14 . Furthermore, window 40 (e.g., a quartz window) can be disposed in one wall of chamber 14 adjacent to cavity 12 , permitting temperature sensor 42 (e.g., an optical pyrometer) to be used to view a process inside cavity 12 . In one embodiment, the optical pyrometer output can increase from zero volts as the temperature rises to within the tracking range.

Sensor 42 can develop output signals as a function of the temperature or any other monitorable condition associated with a work piece (not shown) within cavity 12 and provide the signals to controller 44 . Dual temperature sensing and heating, as well as automated cooling rate and gas flow controls can also be used. Controller 44 in turn can be used to control operation of power supply 28 , which can have one output connected to source 26 as described above and another output connected to valve 22 to control gas flow into cavity 12 .

The invention has been practiced with equal success employing microwave sources at both 915 MHz and 2.45 GHz provided by Communications and Power Industries (CPI), although radiation having any frequency less than about 333 GHz can be used. The 2.45 GHz system provided continuously variable microwave power from about 0.5 kilowatts to about 5.0 kilowatts. A 3-stub tuner allowed impedance matching for maximum power transfer and a dual directional coupler was used to measure forward and reflected powers. Also, optical pyrometers were used for remote sensing of the sample temperature.

As mentioned above, radiation having any frequency less than-about 333 GHz can be used consistent with this invention. For example, frequencies, such as power line frequencies (about 50 Hz to about 60 Hz), can be used, although the pressure of the gas from which the plasma is formed may be lowered to assist with plasma ignition. Also, any radio frequency or microwave frequency can be used consistent with this invention, including frequencies greater than about 100 kHz. In most cases, the gas pressure for such relatively high frequencies need not be lowered to ignite, modulate, or sustain a plasma, thereby enabling many plasma-processes to occur at atmospheric pressures and above. The equipment was computer controlled using LabView 6i software, which provided real-time temperature monitoring and microwave power control. Noise was reduced by using sliding averages of suitable number of data points. Also, to improve speed and computational efficiency, the number of stored data points in the buffer array were limited by using shift-registers and buffer-sizing.

The pyrometer measured the temperature of a sensitive area of about 1 cm ² , which was used to calculate an average temperature. The pyrometer sensed radiant intensities at two wavelengths and fit those intensities using Planck's law to determine the temperature. It will be appreciated, however, that other devices and methods for monitoring and controlling temperature are also available and can be used consistent with this invention. Control software that can be used consistent with this invention is described, for example, in commonly owned, concurrently filed PCT Application No. PCT/US03/14135, which is hereby incorporated by reference in its entirety.

Chamber 14 had several glass-covered viewing ports with radiation shields and one quartz window for pyrometer access. Several ports for connection to a vacuum pump and a gas source were also provided, although not necessarily used.

System 10 also included a closed-loop deionized water cooling system (not shown) with an external heat exchanger cooled by tap water. During operation, the deionized water first cooled the magnetron, then the load-dump in the circulator (used to protect the magnetron), and finally the radiation chamber through water channels welded on the outer surface of the chamber.

Plasma Catalysts

A plasma catalyst consistent with this invention can include one or more different materials and may be either passive or active. A plasma catalyst can be used, among other things, to ignite, modulate, and/or sustain a plasma at a gas pressure that is less than, equal to, or greater than atmospheric pressure.

One method of forming a plasma consistent with this invention can include subjecting a gas in a cavity to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a passive plasma catalyst. A passive plasma catalyst consistent with this invention can include any object capable of inducing a plasma by deforming a local electric field (e.g., an electromagnetic field) consistent with this invention, without necessarily adding additional energy through the catalyst, such as by applying an electric voltage to create a spark.

A passive plasma catalyst consistent with this invention can also be a nano-particle or a nano-tube. As used herein, the term “nano-particle” can include any particle having a maximum physical dimension less than about 100 nm that is at least electrically semi-conductive. Also, both single-walled and multi-walled carbon nanotubes, doped and undoped, can be particularly effective for igniting plasmas consistent with this invention because of their exceptional electrical conductivity and elongated shape. The nanotubes can have any convenient length and can be a powder fixed to a substrate. If fixed, the nanotubes can be oriented randomly on the surface of the substrate or fixed to the substrate (e.g., at some predetermined orientation) while the plasma is ignited or sustained.

A passive plasma catalyst can also be a powder consistent with this invention, and need not comprise nano-particles or nano-tubes. It can be formed, for example, from fibers, dust particles, flakes, sheets, etc. When in powder form, the catalyst can be suspended, at least temporarily, in a gas. By suspending the powder in the gas, the powder can be quickly dispersed throughout the cavity and more easily consumed, if desired.

In one embodiment, the powder catalyst can be carried into the cavity and at least temporarily suspended with a carrier gas. The carrier gas can be the same or different from the gas that forms the plasma. Also, the powder can be added to the gas prior to being introduced to the cavity. For example, as shown in FIG. 1A, radiation source 52 can supply radiation to radiation cavity 55 , in which plasma cavity 60 is placed. Powder source 65 provides catalytic powder 70 into gas stream 75 . In an alternative embodiment, powder 70 can be first added to cavity 60 in bulk (e.g., in a pile) and then distributed in the cavity in any number of ways, including flowing a gas through or over the bulk powder. In addition, the powder can be added to the gas for igniting, modulating, or sustaining a plasma by moving, conveying, drizzling, sprinkling, blowing, or otherwise, feeding the powder into or within the cavity.

In one experiment, a plasma was ignited in a cavity by placing a pile of carbon fiber powder in a copper pipe that extended into the cavity. Although sufficient radiation was directed into the cavity, the copper pipe shielded the powder from the radiation and no plasma ignition took place. However, once a carrier gas began flowing through the pipe, forcing the powder out of the pipe and into the cavity, and thereby subjecting the powder to the radiation, a plasma was nearly instantaneously ignited in the cavity.

A powder plasma catalyst consistent with this invention can be substantially non-combustible, thus it need not contain oxygen or burn in the presence of oxygen. Thus, as mentioned above, the catalyst can include a metal, carbon, a carbon-based alloy, a carbon-based composite, an electrically conductive polymer, a conductive silicone elastomer, a polymer nanocomposite, an organic-inorganic composite, and any combination thereof.

Also, powder catalysts can be substantially uniformly distributed in the plasma cavity (e.g., when suspended in a gas), and plasma ignition can be precisely controlled within the cavity. Uniform ignition can be important in certain applications, including those applications requiring brief plasma exposures, such as in the form of one or more bursts. Still, a certain amount of time can be required for a powder catalyst to distribute itself throughout a cavity, especially in complicated, multi-chamber cavities. Therefore, consistent with another aspect of this invention, a powder catalyst can be introduced into the cavity through a plurality of ignition ports to more rapidly obtain a more uniform catalyst distribution therein (see below).

In addition to powder, a passive plasma catalyst consistent with this invention can include, for example, one or more microscopic or macroscopic fibers, sheets, needles, threads, strands, filaments, yarns, twines, shavings, slivers, chips, woven fabrics, tape, whiskers, or any combination thereof. In these cases, the plasma catalyst can have at least one portion with one physical dimension substantially larger than another physical dimension. For example, the ratio between at least two orthogonal dimensions should be at least about 1:2, but could be greater than about 1:5, or even greater than about 1:10.

Thus, a passive plasma catalyst can include at least one portion of material that is relatively thin compared to its length. A bundle of catalysts (e.g., fibers) may also be used and can include, for example, a section of graphite tape. In one experiment, a section of tape having approximately thirty thousand strands of graphite fiber, each about 2-3 microns in diameter, was successfully used. The number of fibers in and the length of a bundle are not critical to igniting, modulating, or sustaining the plasma. For example, satisfactory results have been obtained using a section of graphite tape about one-quarter inch long. One type of carbon fiber that has been successfully used consistent with this invention is sold under the trademark Magnamite®, Model No. AS4C-GP3K, by the Hexcel Corporation, of Anderson, S.C. Also, silicon-carbide fibers have been successfully used.

A passive plasma catalyst consistent with another aspect of this invention can include one or more portions that are, for example, substantially spherical, annular, pyramidal, cubic, planar, cylindrical, rectangular or elongated.

The passive plasma catalysts discussed above include at least one material that is at least electrically semi-conductive. In one embodiment, the material can be highly conductive. For example, a passive plasma catalyst consistent with this invention can include a metal, an inorganic material, carbon, a carbon-based alloy, a carbon-based composite, an electrically conductive polymer, a conductive silicone elastomer, a polymer nanocomposite, an organic-inorganic composite, or any combination thereof. Some of the possible inorganic materials that can be included in the plasma catalyst include carbon, silicon carbide, molybdenum, platinum, tantalum, tungsten, carbon nitride, and aluminum, although other electrically conductive inorganic materials are believed to work just as well.

In addition to one or more electrically conductive materials, a passive plasma catalyst consistent with this invention can include one or more additives (which need not be electrically conductive). As used herein, the additive can include any material that a user wishes to add to the plasma. For example, in doping semiconductors and other materials, one or more dopants can be added to the plasma through the catalyst. See, e.g., commonly owned, concurrently filed U.S. patent application Ser. No. 10/513,397, which is hereby incorporated by reference in its entirety. The catalyst can include the dopant itself, or it can include a precursor material that, upon decomposition, can form the dopant. Thus, the plasma catalyst can include one or more additives and one or more electrically conductive materials in any desirable ratio, depending on the ultimate desired composition of the plasma and the process using the plasma.

The ratio of the electrically conductive components to the additives in a passive plasma catalyst can vary over time while being consumed. For example, during ignition, the plasma catalyst could desirably include a relatively large percentage of electrically conductive components to improve the ignition conditions. On the other hand, if used while sustaining the plasma, the catalyst could include a relatively large percentage of additives. It will be appreciated by those of ordinary skill in the art that the component ratio of the plasma catalyst used to ignite and sustain the plasma could be the same.

A predetermined ratio profile can be used to simplify many plasma processes. In many conventional plasma processes, the components within the plasma are added as necessary, but such addition normally requires programmable equipment to add the components according to a predetermined schedule. However, consistent with this invention, the ratio of components in the catalyst can be varied, and thus the ratio of components in the plasma itself can be automatically varied. That is, the ratio of components in the plasma at any particular time can depend on which of the catalyst portions is currently being consumed by the plasma. Thus, the catalyst component ratio can be different at different locations within the catalyst. And, the current ratio of components in a plasma can depend on the portions of the catalyst currently and/or previously consumed, especially when the flow rate of a gas passing through the plasma chamber is relatively slow.

A passive plasma catalyst consistent with this invention can be homogeneous, inhomogeneous, or graded. Also, the plasma catalyst component ratio can vary continuously or discontinuously throughout the catalyst. For example, in FIG. 2, the ratio can vary smoothly forming a gradient along a length of catalyst 100 . Catalyst 100 can include a strand of material that includes a relatively low concentration of a component at section 105 and a continuously increasing concentration toward section 110 .

Alternatively, as shown in FIG. 3, the ratio can vary discontinuously in each portion of catalyst 120 , which includes, for example, alternating sections 125 and 130 having different concentrations. It will be appreciated that catalyst 120 can have more than two section types. Thus, the catalytic component ratio being consumed by the plasma can vary in any predetermined fashion. In one embodiment, when the plasma is monitored and a particular additive is detected, further processing can be automatically commenced or terminated.

Another way to vary the ratio of components in a sustained plasma is by introducing multiple catalysts having different component ratios at different times or different rates. For example, multiple catalysts can be introduced at approximately the same location or at different locations within the cavity. When introduced at different locations, the plasma formed in the cavity can have a component concentration gradient determined by the locations of the various catalysts. Thus, an automated system can include a device by which a consumable plasma catalyst is mechanically inserted before and/or during plasma igniting, modulating, and/or sustaining.

A passive plasma catalyst consistent with this invention can also be coated. In one embodiment, a catalyst can include a substantially non-electrically conductive coating deposited on the surface of a substantially electrically conductive material. Alternatively, the catalyst can include a substantially electrically conductive coating deposited on the surface of a substantially electrically non-conductive material. FIGS. 4 and 5, for example, show fiber 140 , which includes underlayer 145 and coating 150 . In one embodiment, a plasma catalyst including a carbon core is coated with nickel to prevent oxidation of the carbon.

A single plasma catalyst can also include multiple coatings. If the coatings are consumed during contact with the plasma, the coatings could be introduced into the plasma sequentially, from the outer coating to the innermost coating, thereby creating a time-release mechanism. Thus, a coated plasma catalyst can include any number of materials, as long as a portion of the catalyst is at least electrically semi-conductive.

Consistent with another embodiment of this invention, a plasma catalyst can be located entirely within a radiation cavity to substantially reduce or prevent radiation energy leakage. In this way, the plasma catalyst does not electrically or magnetically couple with the vessel containing the cavity or to any electrically conductive object outside the cavity. This prevents sparking at the ignition port and prevents radiation from leaking outside the cavity during the ignition and possibly later if the plasma is sustained. In one embodiment, the catalyst can be located at a tip of a substantially electrically non-conductive extender that extends through an ignition port.

FIG. 6, for example, shows radiation chamber 160 in which plasma cavity 165 is placed. Plasma catalyst 170 is elongated and extends through ignition port 175 . As shown in FIG. 7, and consistent with this invention, catalyst 170 can include electrically conductive distal portion 180 (which is placed in chamber 160 ) and electrically non-conductive portion 185 (which is placed substantially outside chamber 160 ). This configuration prevents an electrical connection (e.g., sparking) between distal portion 180 and chamber 160 .

In another embodiment, shown in FIG. 8, the catalyst can be formed from a plurality of electrically conductive segments 190 separated by and mechanically connected to a plurality of electrically non-conductive segments 195 . In this embodiment, the catalyst can extend through the ignition port between a point inside the cavity and another point outside the cavity, but the electrically discontinuous profile significantly prevents sparking and energy leakage.

Another method of forming a plasma consistent with this invention includes subjecting a gas in a cavity to electromagnetic radiation having a frequency less than about 333 GHz in the presence of an active plasma catalyst, which generates or includes at least one ionizing particle.

An active plasma catalyst consistent with this invention can be any particle or high energy wave packet capable of transferring a sufficient amount of energy to a gaseous atom or molecule to remove at least one electron from the gaseous atom or molecule in the presence of electromagnetic radiation. Depending on the source, the ionizing particles can be directed into the cavity in the form of a focused or collimated beam, or they may be sprayed, spewed, sputtered, or otherwise introduced.

For example, FIG. 9 shows radiation source 200 directing radiation into radiation chamber 205 . Plasma cavity 210 is positioned inside of chamber 205 and may permit a gas to flow therethrough via ports 215 and 216 . Source 220 directs ionizing particles 225 into cavity 210 . Source 220 can be protected, for example, by a metallic screen which allows the ionizing particles to pass through but shields source 220 from radiation. If necessary, source 220 can be water-cooled.

Examples of ionizing particles consistent with this invention can include x-ray particles, gamma ray particles, alpha particles, beta particles, neutrons, protons, and any combination thereof. Thus, an ionizing particle catalyst can be charged (e.g., an ion from an ion source) or uncharged and can be the product of a radioactive fission process. In one embodiment, the vessel in which the plasma cavity is formed could be entirely or partially transmissive to the ionizing particle catalyst. Thus, when a radioactive fission source is located outside the cavity, the source can direct the fission products through the vessel to ignite the plasma. The radioactive fission source can be located inside the radiation chamber to substantially prevent the fission products (i.e., the ionizing particle catalyst) from creating a safety hazard.

In another embodiment, the ionizing particle can be a free electron, but it need not be emitted in a radioactive decay process. For example, the electron can be introduced into the cavity by energizing the electron source (such as a metal), such that the electrons have sufficient energy to escape from the source. The electron source can be located inside the cavity, adjacent the cavity, or even in the cavity wall. It will be appreciated by those of ordinary skill in the art that any combination of electron sources is possible. A common way to produce electrons is to heat a metal, and these electrons can be further accelerated by applying an electric field.

In addition to electrons, free energetic protons can also be used to catalyze a plasma. In one embodiment, a free proton can be generated by ionizing hydrogen and, optionally, accelerated with an electric field.

One advantage of the active and passive catalysts consistent with this invention is that they can catalyze a plasma in a substantially continual manner. A sparking device, for example, can only catalyze a plasma when a spark is present. A spark, however, is usually generated by applying a voltage across two electrodes. In general, sparks are generated periodically and separated by periods in which no spark is generated. During these non-sparking periods, a plasma is not catalyzed. Also, sparking devices, for example, normally require electrical energy to operate, although the active and passive plasma catalysts consistent with this invention do not require electrical energy to operate.

Multi-mode Radiation Cavities

A radiation waveguide, cavity, or chamber can be designed to support or facilitate propagation of at least one electromagnetic radiation mode. As used herein, the term “mode” refers to a particular pattern of any standing or propagating electromagnetic wave that satisfies Maxwell's equations and the applicable boundary conditions (e.g., of the cavity). In a waveguide or cavity, the mode can be any one of the various possible patterns of propagating or standing electromagnetic fields. Each mode is characterized by its frequency and polarization of the electric field and/or the magnetic field vectors. The electromagne