Eldridge, Jerome M. (Los Gatos, CA, US)
Ahn, Kie Y. (Chappaqua, NY, US)
Forbes, Leonard (Corvallis, OR, US)

Plaque It!

11/704458

11/04/2008

02/09/2007

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Micron Technology, Inc. (Boise, ID, US)

257/239

257/325, 257/314, 257/E29.274, 257/315, 257/E29.129

H01L29/76

257/314, 257/E29.129

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3903232	Dental and biomedical foams and method	September, 1975	Wood et al.
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3959191	Novel hydrophobic polyurethane foams	May, 1976	Kehr et al.
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4137200	Crosslinked hydrophilic foams and method	January, 1979	Wood et al.
4293679	Composition and method of controlling solid polyurethane particle size with water reactant	October, 1981	Cogliano
4295150	Storage transistor	October, 1981	Adam
4302620	Reactions involving zeolite catalysts modified with group IV A metals	November, 1981	Chu
4358397	Zeolite catalysts modified with group IV A metals	November, 1982	Chu
4403083	Preparation of solid polyurethane particles	September, 1983	Marans et al.
4412902	Method of fabrication of Josephson tunnel junction	November, 1983	Michikami et al.
4510584	MOS Random access memory cell with nonvolatile storage	April, 1985	Dias et al.
4545035	Dynamic RAM with nonvolatile shadow memory	October, 1985	Guterman et al.
4556975	Programmable redundancy circuit	December, 1985	Smith et al.
4665417	Non-volatile dynamic random access memory cell	May, 1987	Lam
4672240	Programmable redundancy circuit	June, 1987	Smith et al.
4688078	Partially relaxable composite dielectric structure	August, 1987	Hseih
4757360	Floating gate memory device with facing asperities on floating and control gates	July, 1988	Faraone et al.
4780424	Process for fabricating electrically alterable floating gate memory devices	October, 1988	Holler
4939559	Dual electron injector structures using a conductive oxide between injectors	July, 1990	DiMaria et al.
4940636	Optical interference filter	July, 1990	Brock et al.
4961004	X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing samarium to reduce afterglow	October, 1990	Bryan et al.
4963753	X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing gadolinium to reduce afterglow	October, 1990	Bryan et al.
4963754	X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing thulium to reduce afterglow	October, 1990	Bryan et al.
4967085	X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing neodymium to reduce afterglow	October, 1990	Bryan et al.
4967087	X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing ytterbium to reduce afterglow	October, 1990	Bryan et al.
4972086	X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing erbium to reduce afterglow	November, 1990	Bryan et al.
4972516	X-ray intensifying screen including a titanium activated hafnium dioxide phosphur containing holmium to reduce afterglow	November, 1990	Bryan et al.
4975014	High temperature low thermal expansion fastener	December, 1990	Rufin et al.
4975588	X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing lutetium to reduce afterglow	December, 1990	Bryan et al.
4980559	X-ray intensifying screen including a titanium activated hafnium dioxide phospher containing europium to reduce afterglow	December, 1990	Bryan et al.
4980560	X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing scandium	December, 1990	Bryan et al.
4983847	X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing indium	January, 1991	Bryan et al.
4988880	X-ray intensifying screen containing hafnia phosphor	January, 1991	Bryan et al.
4990282	Titanium activated hafnia and/or zirconia host phosphor containing scandium	February, 1991	Bryan et al.
4992205	Titanium activated hafnia and/or zirconia host phosphor containing indium	February, 1991	Bryan et al.
4994205	Composition containing a hafnia phosphor of enhanced luminescence	February, 1991	Bryan et al.
4996003	Titanium activated hafnia and/or zirconia host phosphor containing a selected rare earth	February, 1991	Bryan et al.
5008034	Titanium activated hafnia and/or zirconia host phosphor containing neodymium	April, 1991	Bryan et al.
5017791	X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing yttrium to reduce afterglow	May, 1991	Bryan et al.
5042011	Sense amplifier pulldown device with tailored edge input	August, 1991	Casper et al.
5057448	Method of making a semiconductor device having DRAM cells and floating gate memory cells	October, 1991	Kuroda
5071782	Vertical memory cell array and method of fabrication	December, 1991	Mori
5073519	Method of fabricating a vertical FET device with low gate to drain overlap capacitance	December, 1991	Rodder
5075536	Heating element assembly for glow plug	December, 1991	Towe et al.
5084606	Encapsulated heating filament for glow plug	January, 1992	Bailey et al.
5095218	X-ray intensifying screen with enhanced emission	March, 1992	Bryan et al.
5153880	Field-programmable redundancy apparatus for memory arrays	October, 1992	Owen et al.
5280205	Fast sense amplifier	January, 1994	Green et al.
5315142	High performance trench EEPROM cell	May, 1994	Acovic et al.
5331188	Non-volatile DRAM cell	July, 1994	Acovic et al.
5338953	Electrically erasable and programmable semiconductor memory device with trench memory transistor and manufacturing method of the same	August, 1994	Wake
5350738	Method of manufacturing an oxide superconductor film	September, 1994	Hase et al.
5353431	Memory address decoder with storage for memory attribute information	October, 1994	Doyle et al.
5399516	Method of making shadow RAM cell having a shallow trench EEPROM	March, 1995	Bergendahl et al.
5418389	Field-effect transistor with perovskite oxide channel	May, 1995	Watanabe
5429966	Method of fabricating a textured tunnel oxide for EEPROM applications	July, 1995	Wu et al.
5474947	Nonvolatile memory process	December, 1995	Chang et al.
5488612	Method and apparatus for field testing field programmable logic arrays	January, 1996	Heybruck
5497494	Method for saving and restoring the state of a CPU executing code in protected mode	March, 1996	Combs et al.
5498558	Integrated circuit structure having floating electrode with discontinuous phase of metal silicide formed on a surface thereof and process for making same	March, 1996	Kapoor
5508544	Three dimensional FAMOS memory devices	April, 1996	Shah
5576567	Vertical memory cell array and method of fabrication	November, 1996	Mori
5600592	Nonvolatile semiconductor memory device having a word line to which a negative voltage is applied	February, 1997	Atsumi et al.
5608670	Flash memory with improved erasability and its circuitry	March, 1997	Akaogi et al.
5618575	Process and apparatus for the production of a metal oxide layer	April, 1997	Peter
5618761	Method of manufacturing a perovskite thin film dielectric	April, 1997	Eguchi et al.
5619051	Semiconductor nonvolatile memory cell	April, 1997	Endo
5619450	Drive circuit for flash memory with improved erasability	April, 1997	Takeguchi
5619642	Fault tolerant memory system which utilizes data from a shadow memory device upon the detection of erroneous data in a main memory device	April, 1997	Nielsen et al.
5627785	Memory device with a sense amplifier	May, 1997	Gilliam et al.
5677867	Memory with isolatable expandable bit lines	October, 1997	Hazani
5691209	Lattice interconnect method and apparatus for manufacturing multi-chip modules	November, 1997	Liberkowski
5691230	Technique for producing small islands of silicon on insulator	November, 1997	Forbes
5703387	Split gate memory cell with vertical floating gate	December, 1997	Hong
5705415	Process for forming an electrically programmable read-only memory cell	January, 1998	Orlowski et al.
5739544	Quantization functional device utilizing a resonance tunneling effect and method for producing the same	April, 1998	Yuki et al.
5739567	Highly compact memory device with nonvolatile vertical transistor memory cell	April, 1998	Wong
5751038	Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers	May, 1998	Mukherjee
5768192	Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping	June, 1998	Eitan
5798548	Semiconductor device having multiple control gates	August, 1998	Fujiwara
5801401	Flash memory with microcrystalline silicon carbide film floating gate	September, 1998	Forbes
5852306	Flash memory with nanocrystalline silicon film floating gate	December, 1998	Forbes
5880991	Structure for low cost mixed memory integration, new NVRAM structure, and process for forming the mixed memory and NVRAM structure	March, 1999	Hsu et al.
5888867	Non-uniform threshold voltage adjustment in flash eproms through gate work function alteration	March, 1999	Wang et al.
5923056	Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials	July, 1999	Lee et al.
5936274	High density flash memory	August, 1999	Forbes et al.
5952692	Memory device with improved charge storage barrier structure	September, 1999	Nakazato et al.
5959465	Fast Nor-Nor PLA operating from a single-phase clock	September, 1999	Beat
5962959	Electron emission device and display device for emitting electrons in response to an applied electric field using the electron emission device	October, 1999	Iwasaki et al.
5969383	Split-gate memory device and method for accessing the same	October, 1999	Chang et al.
5973355	Nonvolatile semiconductor memory device and manufacturing method of the same	October, 1999	Shirai et al.
5981350	Method for forming high capacitance memory cells	November, 1999	Geusic et al.
5986932	Non-volatile static random access memory and methods for using same	November, 1999	Ratnakumar et al.
5990605	Electron emission device and display device using the same	November, 1999	Yoshikawa et al.
5991225	Programmable memory address decode array with vertical transistors	November, 1999	Forbes et al.
5998528	Viscous carrier compositions, including gels, formed with an organic liquid carrier, a layered material: polymer complex, and a di-, and/or tri-valent cation	December, 1999	Tsipursky et al.
6009011	Non-volatile memory and method for operating the same	December, 1999	Yamauchi
6023124	Electron emission device and display device using the same	February, 2000	Chuman et al.
6023125	Electron emission device and display using the same	February, 2000	Yoshikawa et al.
6025228	Method of fabricating an oxynitride-capped high dielectric constant interpolysilicon dielectric structure for a low voltage non-volatile memory	February, 2000	Ibok et al.
6025627	Alternate method and structure for improved floating gate tunneling devices	February, 2000	Forbes et al.
6031263	DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate	February, 2000	Forbes et al.
6066922	Electron emission device and display device using the same	May, 2000	Iwasaki
6069380	Single-electron floating-gate MOS memory	May, 2000	Chou et al.
6069816	High-speed responding data storing device for maintaining stored data without power supply	May, 2000	Nishimura
6077745	Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array	June, 2000	Burns, Jr. et al.
6087222	Method of manufacture of vertical split gate flash memory device	July, 2000	Jung Lin et al.
6087695	Source side injection flash EEPROM memory cell with dielectric pillar and operation	July, 2000	Chen
6091626	Low voltage, low power static random access memory cell	July, 2000	Madan
6093606	Method of manufacture of vertical stacked gate flash memory device	July, 2000	Lin et al.
6103419	Solid secondary lithium cell based on lithiated zirconium, titanium or hafnium oxide cathode material	August, 2000	Saidi et al.
6108240	Implementation of EEPROM using intermediate gate voltage to avoid disturb conditions	August, 2000	Lavi et al.
6118147	Double density non-volatile memory cells	September, 2000	Liu
6118159	Electrically programmable memory cell configuration	September, 2000	Willer et al.
6124608	Non-volatile trench semiconductor device having a shallow drain region	September, 2000	Liu et al.
6124729	Field programmable logic arrays with vertical transistors	September, 2000	Noble et al.
6125062	Single electron MOSFET memory device and method	September, 2000	Ahn et al.
6130453	Flash memory structure with floating gate in vertical trench	October, 2000	Mei et al.
6130503	Electron emission device and display using the same	October, 2000	Negishi et al.
6134175	Memory address decode array with vertical transistors	October, 2000	Forbes et al.
6135175	Tree harvester provided with a rotatable worktable	October, 2000	Gaudreault et al.
6137025	Ceramic composition for immobilization of actinides	October, 2000	Ebbinghaus et al.
6141238	Dynamic random access memory (DRAM) cells with repressed ferroelectric memory methods of reading same, and apparatuses including same	October, 2000	Forbes et al.
6141248	DRAM and SRAM memory cells with repressed memory	October, 2000	Forbes et al.
6141260	Single electron resistor memory device and method for use thereof	October, 2000	Ahn et al.
6143636	High density flash memory	November, 2000	Forbes et al.
6144155	Electron emission device and display device using the same	November, 2000	Yoshikawa et al.
6147378	Fully recessed semiconductor device and method for low power applications with single wrap around buried drain region	November, 2000	Liu et al.
6147443	Electron emission device and display device using the same	November, 2000	Yoshikawa et al.
6153468	Method of forming a logic array for a decoder	November, 2000	Forbes et al.
6157061	Nonvolatile semiconductor memory device and method of manufacturing the same	December, 2000	Kawata
6163049	Method of forming a composite interpoly gate dielectric	December, 2000	Bui
6166487	Electron emission device and display device using the same	December, 2000	Negishi et al.
6169306	Semiconductor devices comprised of one or more epitaxial layers	January, 2001	Gardner et al.
6180461	Double sidewall short channel split gate flash memory	January, 2001	Ogura
6180980	Trench non-volatile memory cell	January, 2001	Wang
6184612	Electron emission device with electron supply layer of hydrogenated amorphous silicon	February, 2001	Negishi et al.
6191459	Electrically programmable memory cell array, using charge carrier traps and insulation trenches	February, 2001	Hofmann et al.
6204529	8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate	March, 2001	Lung et al.
6208164	Programmable logic array with vertical transistors	March, 2001	Noble et al.
6210999	Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devices	April, 2001	Gardner et al.
6229175	Nonvolatile memory	May, 2001	Uchida
6238976	Method for forming high density flash memory	May, 2001	Noble et al.
6246606	Memory using insulator traps	June, 2001	Forbes et al.
6249020	DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate	June, 2001	Forbes et al.
6249460	Dynamic flash memory cells with ultrathin tunnel oxides	June, 2001	Forbes et al.
6259198	Flat panel display apparatus with an array of electron emitting devices	July, 2001	Yanagisawa et al.
6274937	Silicon multi-chip module packaging with integrated passive components and method of making	August, 2001	Ahn et al.
6278230	Electron emission device and display device using the same	August, 2001	Yoshizawa et al.
6281042	Structure and method for a high performance electronic packaging assembly	August, 2001	Ahn et al.
6285123	Electron emission device with specific island-like regions	September, 2001	Yamada et al.
6297103	Structure and method for dual gate oxide thicknesses	October, 2001	Ahn et al.
6306708	Fabrication method for an electrically erasable programmable read only memory	October, 2001	Peng
6307775	Deaprom and transistor with gallium nitride or gallium aluminum nitride gate	October, 2001	Forbes et al.
6313518	Porous silicon oxycarbide integrated circuit insulator	November, 2001	Ahn et al.
6316298	Fabrication method for a flash memory device	November, 2001	Lee
6316873	Electron emission device and display device using the same	November, 2001	Ito et al.
6317364	Multi-state memory	November, 2001	Guterman et al.
6320091	Process for making a ceramic composition for immobilization of actinides	November, 2001	Ebbinghaus et al.
6323844	Cursor controlling device and the method of the same	November, 2001	Yeh et al.
6335554	Semiconductor Memory	January, 2002	Yoshikawa
6341084	Magnetic random access memory circuit	January, 2002	Numata et al.
6350704	Porous silicon oxycarbide integrated circuit insulator	February, 2002	Ahn et al.
6351411	Memory using insulator traps	February, 2002	Forbes et al.
6376312	Formation of non-volatile memory device comprised of an array of vertical field effect transistor structures	April, 2002	Yu
6377070	In-service programmable logic arrays with ultra thin vertical body transistors	April, 2002	Forbes
6388376	Electron emission device with electron supply layer having reduced resistance	May, 2002	Negishi et al.
6396745	Vertical two-transistor flash memory	May, 2002	Hong et al.
6400070	Electron emission device and display device using the same	June, 2002	Yamada et al.
6404124	Electron emission device and display apparatus using the same	June, 2002	Sakemura et al.
6404681	Method for erasing data from a non-volatile semiconductor memory device	June, 2002	Hirano
6424001	Flash memory with ultra thin vertical body transistors	July, 2002	Forbes et al.
6429237	Wire coating compositions	August, 2002	Tooley
6433382	Split-gate vertically oriented EEPROM device and process	August, 2002	Orlowski et al.
6433383	Methods and arrangements for forming a single interpoly dielectric layer in a semiconductor device	August, 2002	Ramsbey et al.
6440801	Structure for folded architecture pillar memory cell	August, 2002	Furukawa et al.
6461905	Dummy gate process to reduce the Vss resistance of flash products	October, 2002	Wang et al.
6461931	Thin dielectric films for DRAM storage capacitors	October, 2002	Eldridge
6465836	Vertical split gate field effect transistor (FET) device	October, 2002	Lin et al.
6472803	Electron emission light-emitting device and display apparatus using the same	October, 2002	Yoshizawa et al.
6475857	Method of making a scalable two transistor memory device	November, 2002	Kim et al.
6476434	4 F2 folded bit line dram cell structure having buried bit and word lines	November, 2002	Noble et al.
6489648	Semiconductor device	December, 2002	Iwasaki et al.
6492288	Glass ceramic and temperature compensating member	December, 2002	Shindo
6495436	Formation of metal oxide gate dielectric	December, 2002	Ahn et al.
6504207	Method to create EEPROM memory structures integrated with high performance logic and NVRAM, and operating conditions for the same	January, 2003	Chen et al.
6514820	Method for forming single electron resistor memory	February, 2003	Ahn et al.
6514828	Method of fabricating a highly reliable gate oxide	February, 2003	Ahn et al.
6514842	Low resistance gate flash memory	February, 2003	Prall et al.
6519176	Dual threshold SRAM cell for single-ended sensing	February, 2003	Hamzaoglu et al.
6521943	Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture	February, 2003	Mine et al.
6534420	Methods for forming dielectric materials and methods for forming semiconductor devices	March, 2003	Ahn et al.
6541280	High K dielectric film	April, 2003	Kaushik et al.
6544846	Method of manufacturing a single electron resistor memory device	April, 2003	Ahn et al.
6552383	Integrated decoupling capacitors	April, 2003	Ahn et al.
6566682	Programmable memory address and decode circuits with ultra thin vertical body transistors	May, 2003	Forbes
6570248	Structure and method for a high-performance electronic packaging assembly	May, 2003	Ahn et al.
6574143	Memory device using hot charge carrier converters	June, 2003	Nakazato
6580124	Multigate semiconductor device with vertical channel current and method of fabrication	June, 2003	Cleeves et al.
6586792	Structures, methods, and systems for ferroelectric memory transistors	July, 2003	Ahn et al.
6586797	Graded composition gate insulators to reduce tunneling barriers in flash memory devices	July, 2003	Forbes et al.
6602053	Cooling structure and method of manufacturing the same	August, 2003	Subramanian et al.
6608378	Formation of metal oxide gate dielectric	August, 2003	Ahn et al.
6641887	Optical recording medium	November, 2003	Lida et al.
6661058	Highly reliable gate oxide and method of fabrication	December, 2003	Ahn et al.
6700132	Flat panel display device utilizing electron emission devices	March, 2004	Chuman et al.
6710465	Scalable two transistor memory device	March, 2004	Song et al.
6710538	Field emission display having reduced power requirements and method	March, 2004	Ahn et al.
6720216	Programmable memory address and decode circuits with vertical body transistors	April, 2004	Forbes
6720221	Structure and method for dual gate oxide thicknesses	April, 2004	Ahn et al.
6730575	Methods of forming perovskite-type material and capacitor dielectric having perovskite-type crystalline structure	May, 2004	Eldridge
6740928	Semiconductor device	May, 2004	Yoshii et al.
6744063	Image pickup device including electron-emitting devices	June, 2004	Yoshikawa et al.
6753568	Memory device	June, 2004	Nakazato et al.
6753571	Nonvolatile memory cells having split gate structure and methods of fabricating the same	June, 2004	Kim et al.
6754108	DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators	June, 2004	Forbes
6756298	Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals	June, 2004	Ahn et al.
6759151	Multilayer article characterized by low coefficient of thermal expansion outer layer	July, 2004	Lee
6767795	Highly reliable amorphous high-k gate dielectric ZrOXNY	July, 2004	Ahn et al.
6774050	Doped aluminum oxide dielectrics	August, 2004	Ahn et al.
6778441	Integrated circuit memory device and method	August, 2004	Forbes et al.
6787413	Capacitor structure forming methods	September, 2004	Ahn
6787992	Display device of flat panel structure with emission devices of matrix array	September, 2004	Chuman et al.
6790791	Lanthanide doped TiOx dielectric films	September, 2004	Ahn et al.
6794250	Vertical split gate flash memory cell and method for fabricating the same	September, 2004	Chang et al.
6794709	Structure and method for dual gate oxide thicknesses	September, 2004	Ahn et al.
6800895	Vertical split gate flash memory cell and method for fabricating the same	October, 2004	Chang et al.
6803326	Porous silicon oxycarbide integrated circuit insulator	October, 2004	Ahn et al.
6812100	Evaporation of Y-Si-O films for medium-k dielectrics	November, 2004	Ahn et al.
6828045	Organic electroluminescence element and production method thereof	December, 2004	Tokailin et al.
6833285	Method of making a chip packaging device having an interposer	December, 2004	Ahn et al.
6833308	Structure and method for dual gate oxide thicknesses	December, 2004	Ahn et al.
6835111	Field emission display having porous silicon dioxide layer	December, 2004	Ahn et al.
6838404	Metal alkoxides and methods of making same	January, 2005	Hentges et al.
6844203	Gate oxides, and methods of forming	January, 2005	Ahn et al.
6846574	Honeycomb structure thermal barrier coating	January, 2005	Subramanian
6852167	Methods, systems, and apparatus for uniform chemical-vapor depositions	February, 2005	Ahn
6858120	Method and apparatus for the fabrication of ferroelectric films	February, 2005	Ahn et al.
6858444	Method for making a ferroelectric memory transistor	February, 2005	Ahn et al.
6858865	Doped aluminum oxide dielectrics	February, 2005	Ahn et al.
6881994	Monolithic three dimensional array of charge storage devices containing a planarized surface	April, 2005	Lee et al.
6884739	Lanthanide doped TiOx dielectric films by plasma oxidation	April, 2005	Ahn et al.
6893984	Evaporated LaA1O3 films for gate dielectrics	May, 2005	Ahn et al.
6894944	Semiconductor integrated circuit device	May, 2005	Ishibashi et al.
6900122	Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics	May, 2005	Ahn et al.
6903367	Programmable memory address and decode circuits with vertical body transistors	June, 2005	Forbes
6914800	Structures, methods, and systems for ferroelectric memory transistors	July, 2005	Ahn et al.
6919266	Copper technology for ULSI metallization	July, 2005	Ahn et al.
6921702	Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics	July, 2005	Ahn et al.
6930346	Evaporation of Y-Si-O films for medium-K dielectrics	August, 2005	Ahn et al.
6950340	Asymmetric band-gap engineered nonvolatile memory device	September, 2005	Bhattacharyya
6952032	Programmable array logic or memory devices with asymmetrical tunnel barriers	October, 2005	Forbes et al.
6953730	Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics	October, 2005	Ahn et al.
6958302	Atomic layer deposited Zr-Sn-Ti-O films using TiI4	October, 2005	Ahn et al.
6958937	DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators	October, 2005	Forbes et al.
6960538	Composite dielectric forming methods and composite dielectrics	November, 2005	Ahn et al.
6963103	SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators	November, 2005	Forbes
6970053	Atomic layer deposition (ALD) high permeability layered magnetic films to reduce noise in high speed interconnection	November, 2005	Akram et al.
6979855	High-quality praseodymium gate dielectrics	December, 2005	Ahn et al.
6989573	Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics	January, 2006	Ahn et al.
7026694	Lanthanide doped TiOx dielectric films by plasma oxidation	April, 2006	Ahn et al.
7042043	Programmable array logic or memory devices with asymmetrical tunnel barriers	May, 2006	Forbes et al.
7045430	Atomic layer-deposited LaAlO3 films for gate dielectrics	May, 2006	Ahn et al.
7049192	Lanthanide oxide / hafnium oxide dielectrics	May, 2006	Ahn et al.
7064058	Low-temperature growth high-quality ultra-thin praseodymium gate dieletrics	June, 2006	Ahn et al.
7068544	Flash memory with low tunnel barrier interpoly insulators	June, 2006	Forbes et al.
7074673	Service programmable logic arrays with low tunnel barrier interpoly insulators	July, 2006	Forbes
7075829	Programmable memory address and decode circuits with low tunnel barrier interpoly insulators	July, 2006	Forbes
7081421	Lanthanide oxide dielectric layer	July, 2006	Ahn et al.
7084078	Atomic layer deposited lanthanide doped TiOx dielectric films	August, 2006	Ahn et al.
7087954	In service programmable logic arrays with low tunnel barrier interpoly insulators	August, 2006	Forbes
7101813	Atomic layer deposited Zr-Sn-Ti-O films	September, 2006	Ahn et al.
7112841	Graded composition metal oxide tunnel barrier interpoly insulators	September, 2006	Eldridge et al.
7126183	Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers	October, 2006	Forbes et al.
7133316	Program/erase method for P-channel charge trapping memory device	November, 2006	Lue
7135734	Graded composition metal oxide tunnel barrier interpoly insulators	November, 2006	Eldridge et al.	257/314
7153744	Method of forming self-aligned poly for embedded flash	December, 2006	Chen et al.
7154138	Transistor-arrangement, method for operating a transistor arrangement as a data storage element and method for producing a transistor-arrangement	December, 2006	Hofmann et al.
7163863	Vertical memory cell and manufacturing method thereof	January, 2007	Shone
7166886	DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators	January, 2007	Forbes
7187587	Programmable memory address and decode circuits with low tunnel barrier interpoly insulators	March, 2007	Forbes
7205601	FinFET split gate EEPROM structure and method of its fabrication	April, 2007	Lee et al.
7235501	Lanthanum hafnium oxide dielectrics	June, 2007	Ahn et al.
7274067	Service programmable logic arrays with low tunnel barrier interpoly insulators	September, 2007	Forbes
7365027	ALD of amorphous lanthanide doped TiOx films	April, 2008	Ahn et al.
7372096	Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers	May, 2008	Forbes et al.
7372097	Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers	May, 2008	Forbes et al.
7391072	Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers	June, 2008	Forbes et al.
20010013621	Memory Device	August, 2001	Nakazato
20010017369	Electron-emitting device and method of manufacturing the same and display apparatus using the same	August, 2001	Iwasaki et al.
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20040164357	Atomic layer-deposited LaAIO3 films for gate dielectrics	August, 2004	Ahn et al.
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20040183108	Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics	September, 2004	Ahn
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20050124109	Top surface roughness reduction of high-k dielectric materials using plasma based processes	June, 2005	Quevado-Lopez et al.
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20050124175	Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics	June, 2005	Ahn et al.
20050138262	Flash memory having a high-permittivity tunnel dielectric	June, 2005	Forbes
20050145957	Evaporated LaAlO3 films for gate dielectrics	July, 2005	Ahn et al.
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20050164521	Zr-Sn-Ti-O films	July, 2005	Ahn et al.
20050169054	SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators	August, 2005	Forbes
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20060043492	Ruthenium gate for a lanthanide oxide dielectric layer	March, 2006	Ahn et al.
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Ho, Tu-tu V.

Schwegman, Lundberg & Woessner, P.A.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No. 10/081,818 filed Feb. 20, 2002, which is a Continuation-in-Part of U.S. patent application Ser. No. 09/943,134 filed on Aug. 30, 2001, now issued as U.S. Pat. No. 7,042,043, both of which are incorporated herein by reference in their entirety.

This application is related to the following commonly assigned U.S. patent applications: “DRAM Cells with Repressed Memory Metal Oxide Tunnel Insulators,” Ser. No. 09/945,395, now issued as U.S. Pat. No. 6,754,108; “Flash Memory with Low Tunnel Barrier Interpoly Insulators,” Ser. No. 09/945,507, now issued as U.S. Pat. No. 7,068,544; “Dynamic Electrically Alterable Programmable Memory with Insulating Metal Oxide Interpoly Insulators,” Ser. No. 09/945,498, now issued as U.S. Pat. No. 6,778,441; “Field Programmable Logic Arrays with Metal Oxide and/or Low Tunnel Barrier Intel-poly Insulators,” Ser. No. 09/945,512, now issued as U.S. Pat. No. 7,087,954; “SRAM Cells with Repressed Floating Gate Memory, Metal Oxide Tunnel Interpoly Insulators,” Ser. No. 09/945,554, now issued as U.S. Pat. No. 6,963,103; “Programmable Memory Address and Decode Devices with Low Tunnel Barrier Interpoly Insulators,” Ser. No. 09/945,500, now issued as U.S. Pat. No. 7,075,829; and “Programmable Array Logic or Memory with P-Channel Devices and Asymmetrical Tunnel Barriers,” Ser. No. 10/028,001, now issued as U.S. Pat. No. 7,132,711; each of which disclosure is herein incorporated by reference.

What is claimed is:

1. A floating gate transistor, comprising: a first source/drain region and a second source/drain region separated by a channel; a horizontally oriented first gate formed adjacent a body region that includes the channel; a gate oxide separating the first gate from the channel; a second gate adjacent the first gate; and a graded, asymmetrical low tunnel barrier intergate insulator formed by multiple monolayer deposition separating the second gate from the first gate, the first gate including a polysilicon floating gate having a metal layer formed thereon in contact with the asymmetrical low tunnel barrier intergate insulator, and the second gate includes a polysilicon control gate having a metal layer formed thereon in contact with the asymmetrical low tunnel barrier intergate insulator, wherein the metal layer includes a metal layer that has a different work function than the metal layer formed on the floating gate and the metal layer is formed of the same material as the asymmetrical low tunnel barrier intergate insulator.

2. The floating gate transistor of claim 1, wherein the asymmetrical low tunnel barrier intergate insulator includes aluminum oxide (Al₂O₃), wherein the aluminum oxide has a number of small compositional ranges such that gradients can be formed by an applied electric field which produce different barrier heights at an interface with the first gate and the second gate.

3. The floating gate transistor of claim 1, wherein the asymmetrical low tunnel barrier intergate insulator includes an asymmetrical transition metal oxide.

4. The floating gate transistor of claim 3, wherein the asymmetrical transition metal oxide includes Ta₂O₅.

5. The floating gate transistor of claim 3, wherein the asymmetrical transition metal oxide includes TiO₂.

6. The floating gate transistor of claim 3, wherein the asymmetrical transition metal oxide includes ZrO₂.

7. The floating gate transistor of claim 3, wherein the asymmetrical transition metal oxide includes Nb₂O₅.

8. The floating gate transistor of claim 1, wherein the asymmetrical low tunnel barrier intergate insulator includes an asymmetrical Perovskite oxide tunnel barrier.

9. The floating gate transistor of claim 8, wherein the asymmetrical Peroyskite oxide tunnel barrier is selected from the group consisting of SrBi₂Ta₂O₃, SrTiO₃, PbTiO₃, and PbZrO₃.

10. The floating gate transistor of claim 1, wherein the floating gate transistor includes an n-channel type floating gate transistor.

11. The floating gate transistor of claim 1, wherein the graded asymmetrical low tunnel barrier intergate insulator includes aluminum oxide having a number of small compositional ranges.

12. The floating gate transistor of claim 1, wherein the asymmetrical low tunnel barrier intergate insulator is continuously graded.

13. A vertical, non volatile memory cell, comprising: a first source/drain region; a body region including a channel region formed on the first source/drain region; a second source/drain region formed on the body region; a floating gate adjacent the channel region and separated therefrom by a gate oxide; a control gate adjacent the floating gate; and a graded, asymmetrical low tunnel barrier intergate insulator separating the floating gate and the control gate, the intergate insulator having a tunneling barrier of less than 2.0 eV and having a number of small compositional ranges such that gradients can be formed which produce different barrier heights at an interface with the floating gate and control gate.

14. The vertical, non volatile memory cell of claim 13, wherein the asymmetrical low tunnel barrier intergate insulator includes an insulator selected from the group consisting of Al₂O₃, Ta₂O₅, TiO₂, ZrO₂, Nb₂O₅, SrBi₂Ta₂O₃, SrTiO₃, PbTiO₃, and PbZrO₃.