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7468322 Methods of multi-step electrochemical mechanical planarization of Cu  
A method is provided for removing conductive material from a metal layer deposited on a wafer having die level thickness variations on its surface. The method includes contacting the metal layer...
7413988 Method and apparatus for detecting planarization of metal films prior to clearing  
A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor...
7402529 Method of applying cladding material on conductive lines of MRAM devices  
A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed...
7383629 Method of making circuitized substrates utilizing smooth-sided conductive layers as part thereof  
A circuitized substrate in which two conductive layers (e.g., electroplated copper foil) are bonded (e.g., laminated) to an interim dielectric layer. Each of the two foil surfaces which physically...
7378029 Method for manufacturing magnetic recording medium  
A method for manufacturing a magnetic recording medium is provided, by which a magnetic recording medium having a recording layer formed in a concavo-convex pattern, a sufficiently flat surface,...
7377836 Versatile wafer refining  
Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New...
7348275 Processing method for semiconductor wafer  
A processing method for a semiconductor wafer which is generally circular, and which has on the face thereof an annular surplus region present in an outer peripheral edge portion of the face, and a...
7342638 Electro-optical device, method of manufacturing the same, and method of manufacturing substrate device  
According to an aspect of the invention, to completely planarize the outermost surface of a laminated structure by appropriately performing a planarizing process, such as a CMP process, in an...
7338610 Etching method for manufacturing semiconductor device  
A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as...
7335600 Method for removing photoresist  
A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The...
7307013 Nonselective unpatterned etchback to expose buried patterned features  
A method for etching to form a planarized surface is disclosed. Spaced-apart features are formed of a first material, the first material either conductive or insulating. A second material is...
7304263 Systems and methods utilizing an aperture with a reactive atom plasma torch  
The footprint of a reactive atom plasma processing tool can be modified using an aperture device. A flow of reactive gas can be injected into the center of an annular plasma. An aperture can be...
7300595 Method for filling concave portions of concavo-convex pattern and method for manufacturing magnetic recording medium  
A method for filling concave portions of a concavo-convex pattern by which the concave portions of the concavo-convex pattern can be filled to flatten the surface with reliability, and a method for...
7288206 High-purity alkali etching solution for silicon wafers and use thereof  
A high-purity alkali etching solution for silicon wafers results in silicon wafers with extremely low metal impurity contamination, and excellent surface flatness. The alkali etching solution...
7281317 Manufacturing method of flying magnetic head slider  
A manufacturing method of a flying magnetic head slider includes a step of providing a substrate with a plurality of inductive write head elements formed thereon, each head element having a pair of...
7279115 Method to reduce stacking fault nucleation sites and reduce Vf drift in bipolar devices  
A method is disclosed for preparing a substrate and epilayer for reducing stacking fault nucleation and reducing forward voltage (V f ) drift in silicon carbide-based bipolar devices. The method...
7273563 Method for manufacturing a magnetic recording medium  
A method for manufacturing a magnetic recording medium is provided, which can efficiently manufacture a magnetic recording medium that includes a recording layer formed in a concavo-convex pattern...
7264742 Method of planarizing a surface  
A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material...
7261829 Method for masking a recess in a structure having a high aspect ratio  
A method for selective masking is described. In this case, a filling material is applied to a structure which, as a function of the aspect ratio of the structure, forms cavities when the aspect...
7255803 Method of forming contact openings  
The invention includes etching and contact opening forming methods. In one implementation, a plasma etching method includes providing a bottom powered plasma chamber that includes a plasma...
7247251 Method for manufacturing a magnetic recording medium  
A method for manufacturing a magnetic recording medium is provided, which can efficiently manufacture a magnetic recording medium that includes a recording layer formed in a concavo-convex pattern,...
7246424 Magnetic devices having magnetic features with CMP stop layers  
A magnetic device having a magnetic feature, the magnetic feature including a magnetic portion comprising a magnetic material, a region of non-magnetic material adjacent to the magnetic portion,...
7220164 Advanced finishing control  
An apparatus and method of using an in situ finishing information for finishing workpieces and semiconductor wafers are described. The method uses operative sensors such as friction sensors for...
7204934 Method for planarization etch with in-situ monitoring by interferometry prior to recess etch  
A method for processing recess etch operations in substrates is provided including forming a hard mask over the substrate and etching a trench in the substrate using the hard mask, and forming a...
7140094 Magnetic head and production method for magnetic heads  
Magnetic heads capable of recording and reading with high sensitivity and resolution are provided by minimizing the outflow of magnetic fluxes from a flux guide to magnetic shields while using a...
RE39413 Low friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafers  
The present invention is a semiconductor wafer that enhances polish-stop endpointing in chemical-mechanical planarization processes. The semiconductor wafer has a substrate with a device feature...
7131890 In situ finishing control  
An apparatus and method of using a in situ finishing information for finishing semiconductor wafers is described. The method uses operative sensors such as friction sensors for detecting and...
7105452 Method of planarizing a semiconductor substrate with an etching chemistry  
The present invention provides a method of planarizing a substrate, the method including, forming, on the substrate, a patterned layer having a first shape associated therewith; and processing the...
7101259 Polishing method and apparatus  
A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing...
7086141 Manufacturing method of magnetoresistive effect sensor  
A manufacturing method of an MR sensor including a step of stacking an anti-ferromagnetic layer made of an electrically conductive anti-ferromagnetic material, a step of stacking a pinned layer on...
7081041 Manufacturing method for forming a write head top pole using chemical mechanical polishing with a DLC stop layer  
A method for forming a write head top pole using chemical mechanical polishing with a diamond-like-carbon (DLC) polishing stop layer is disclosed. The method for providing a top pole of a write...
7052620 Polishing slurry for aluminum-based metal, and method of manufacturing semiconductor device  
A polishing slurry for an aluminum-based metal includes an oxidizing agent having a standard electrode potential of 1.7 V or more, amino acid or amino acid compound, and bi- or higher than...
7041603 Method for producing magnetic memory device  
There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device...
7029591 Planarization with reduced dishing  
A method of forming a planarized layer on a substrate, where the substrate is cleaned, and the layer is formed having a surface with high portions and low portions. A resistive mask is formed over...
7018554 Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices  
A method is disclosed for preparing a substrate and epilayer for reducing stacking fault nucleation and reducing forward voltage (V f ) drift in silicon carbide-based bipolar devices. The method...
6982042 Ion bombardment of electrical lapping guides to decrease noise during lapping process  
A method for reducing noise in a lapping guide. Selected portions of a Giant magnetoresistive device wafer are masked, thereby defining masked and unmasked regions of the wafer in which the...
6968613 Fabrication method of circuit board  
A fabrication method of a circuit board is proposed, wherein a core layer is formed with a plurality of conductive traces, and photo resist is respectively applied on terminals of the conductive...
6949200 Planar magnetic head and fabrication method therefor  
The magnetic head of the present invention, includes a second magnetic pole (P 2 pole) that is fabricated upon a write gap layer that is deposited upon a flat surface. To achieve the flat surface,...
6939474 Method for forming microelectronic spring structures on a substrate  
A method for fabricating microelectronic spring structures is disclosed. In an initial step of the method, a layer of sacrificial material is formed over a substrate. Then, a contoured surface is...
6913703 Method of adjusting the thickness of an electrode in a plasma processing system  
A method of adjusting the relative thickness of an electrode assembly ( 10 ) in a plasma processing system ( 6 ) capable of supporting a plasma ( 20, 120 ) in a reactor chamber ( 16 ). The...
6908858 Method of fabricating semiconductor device having opening filled up with filler  
A method of fabricating a semiconductor device capable of relaxing pattern dependency in a planarization step is obtained. This method of fabricating a semiconductor device comprises steps of...
6908566 Local dry etching method  
In a local dry etching method, position-thickness data of a semiconductor wafer is previously obtained by measuring the wafer surface, components of position-thickness data shorter than a...
6896821 Fabrication of MEMS devices with spin-on glass  
A method of making an etched structure in the fabrication of a MEMS device involves depositing a bulk layer, typically of polysilicon, prone to surface roughness. At least one layer of...
6893800 Substrate topography compensation at mask design: 3D OPC topography anchored  
A semiconductor manufacturing method analyzes topography variations in three dimensions for each photolithographic level and determines critical dimension (CD) bias compensation as inputs to mask...
6890445 Process for packaging electronic devices using thin bonding regions  
In the method, a cap wafer surface is lithographically etched at time of fabrication, so that a raised ridge onto which bonding material is placed is formed near a perimeter of a desired cavity...
6867138 Method of chemical/mechanical polishing of the surface of semiconductor device  
The surface of a semiconductor device is polished by first supplying a polishing pad with a slurry that contains a solvent, abrasive grains, and an additive for making the viscosity of the slurry...
6830500 Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods  
A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer includes use of a fixed-abrasive type polishing...
6814835 Apparatus and method for supplying chemicals in chemical mechanical polishing systems  
An apparatus for supplying chemicals in a chemical mechanical polishing (CMP) process includes a plurality of chemical solution supply sources for supplying different chemical solutions in a...
6805807 Adaptive GCIB for smoothing surfaces  
A method of processing the surface of a workpiece using an adaptive gas cluster ion beam is disclosed. The invention provides a method of reducing the surface roughness and/or improving the surface...
6796883 Controlled lubricated finishing  
A method of using a finishing element and using organic lubricating films for finishing semiconductor wafers is described. The lubricants in the finishing element can be transferred to operative...
Matches 1 - 50 out of 398 1 2 3 4 5 6 7 8 >