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7462862 Transistor using an isovalent semiconductor oxide as the active channel layer  
A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.
7459719 Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer  
An optical semiconductor device includes an active layer having a quantum well structure including alternately stacked well layers and barrier layers with a larger band gap than the well layers....
7456442 Super lattice modification of overlying transistor  
The invention provides a device having a substrate, a buffer region positioned upon the substrate, wherein the buffer region has an upper buffer region and a lower buffer region, a heterojunction...
7429748 High speed GE channel heterostructures for field effect devices  
A method and a layered heterostructure for forming high mobility Ge channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, and...
7414260 Vertical tunneling transistor  
The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the...
7408183 Low cost InGaAIN based lasers  
A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the...
7407858 Resistance random access memory devices and method of fabrication  
A method of fabricating a RRAM includes preparing a substrate and forming a bottom electrode ori the substrate. A PCMO layer is deposited on the bottom electrode using MOCVD or liquid MOCVD,...
7402832 Quantum dots of group IV semiconductor materials  
The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell...
7397062 Heterojunction bipolar transistor with improved current gain  
One aspect of the present invention is directed to a heterojunction bipolar transistor (HBT) comprising: a substrate; a buffer layer of undoped semiconductor material; a sub-collector layer; a...
7378681 Ridge waveguide device surface passivation by epitaxial regrowth  
A method for reducing surface recombination in an area next to a mesa in devices containing active and passive sections. This is obtained by growing, by metalorganic vapor phase epitaxy (MOVPE), a...
7375367 Semiconductor light-emitting device having an active region with aluminum-containing layers forming the lowermost and uppermost layer  
A semiconductor light-emitting device fabricated in a nitride material system has an active region disposed over a substrate. The active region comprises a first aluminium-containing layer forming...
7358525 Quantum dots of group IV semiconductor materials  
The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell...
7351993 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon  
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth...
7335908 Nanostructures and methods for manufacturing the same  
A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length...
7329895 Dual wavelength detector  
A sensor comprises two photodiodes sensitive to different wavelengths. The photodiodes or detectors are stacked in a vertical relationship to each other. A bandpass filter is provided to limit the...
7276724 Series interconnected optoelectronic device module assembly  
Series interconnection of optoelectronic device modules is disclosed. Each device module includes an active layer disposed between a bottom electrode and a transparent conducting layer. An...
7259406 Semiconductor optical element  
A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant...
7253431 Method and apparatus for solution processed doping of carbon nanotube  
A method is provided for doping a carbon nanotube. The method comprises exposing the nanotube to a one-electron oxidant in a solution phase. A method is also provided for forming a carbon nanotube...
7244959 Detection of electromagnetic radiation using micromechanical multiple quantum wells structures  
An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well...
7235809 Semiconductor channel on insulator structure  
A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric...
7235475 Semiconductor nanowire fluid sensor and method for fabricating the same  
Nanowire fluid sensors are provided. The fluid sensors comprise a first electrode, a second electrode, and at least one nanowire between the first electrode and the second electrode. Each nanowire...
7233018 High voltage MOSFET having Si/SiGe heterojuction structure and method of manufacturing the same  
Provided are high voltage metal oxide semiconductor field effect transistor (HVMOSFET) having a Si/SiGe heterojunction structure and method of manufacturing the same. In this method, a substrate on...
7227177 Doped semiconductor nanocrystals  
A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.
7224041 Design and fabrication of 6.1-Å family semiconductor devices using semi-insulating A1Sb substrate  
For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and...
7217948 Semiconductor substrate  
The present invention relates to a preferred semiconductor substrate for the production of devices. The semiconductor substrate is comprised of GaAs. Then, a plurality of quantum rings, which are...
7211822 Nitride semiconductor device  
A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more...
7211821 Devices with optical gain in silicon  
A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the...
7208755 Light-emitting device and method of fabricating the same  
A light emitting device 1 has formed therein a light emitting layer section 24 based on a double heterostructure in which a p-type cladding layer 34 , an active layer 33 and an n-type...
7193236 Light emitting device using nitride semiconductor and fabrication method of the same  
A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer;...
7180066 Infrared detector composed of group III-V nitrides  
A quantum-well infrared photodetector (QWIP) is presented. The photodetector includes a substrate, a buffer layer, a first conductive layer, a multiple quantum well, an optional blocking layer, and...
7166874 Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor  
A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor....
7157730 Angled wafer rotating ion implantation  
Ion implantation by mounting a semiconductor wafer on a rotating plate that is tilted at an angle relative to an ion implantation flux. The tilt angle and the ion implantation energy are adjusted...
7145167 High speed Ge channel heterostructures for field effect devices  
A method and a layered heterostructure for forming high mobility Ge channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, and...
7135699 Method and apparatus for growth of single-crystal rare-earth oxides, nitrides, and phosphides  
Structure and method for growing crystalline superlattice rare earth oxides, rare earth nitrides and rare earth phosphides and ternary rare-earth compounds are disclosed. The structure includes a...
7122827 Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same  
The present invention is directed toward a method for fabricating low-defect nanostructures of wide bandgap materials and to optoelectronic devices, such as light emitting sources and lasers, based...
7122813 Device for generating THz radiation  
A device for generating terahertz radiation. The device comprising a dipole generating layer, a coupling block and an extraction block. The coupling block is transparent to laser light and is in...
7118932 Method of manufacturing waveguide type optical element and integrated optical waveguide type element using waveguide type optical element  
A method of manufacturing a waveguide type optical element wherein Zn is selectively diffused on a light absorption layer using an undoped InP layer. Since an impurity diffusion area is made on the...
7112830 Super lattice modification of overlying transistor  
The invention provides a device having a substrate, a buffer region positioned upon the substrate, wherein the buffer region has an upper buffer region and a lower buffer region, a heterojunction...
7109529 Light-emitting semiconductor device using group III nitride compound  
A flip chip type of light-emitting semiconductor device using group III nitride compound includes a thick positive electrode. The positive electrode, which is made of at least one of silver (Ag),...
7109517 Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors  
Subwavelength random and periodic microscopic structures are used to enhance light absorption and tolerance for ionizing radiation damage of thin film and photodetectors. Diffractive front surface...
7099362 Modulation doped tunnel junction  
A vertical cavity surface emitting laser (VCSEL) includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; a...
7098487 Gallium nitride crystal and method of making same  
There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 10 4 cm −1 , and having no tilt boundaries. A method of forming a GaN...
7098471 Semiconductor quantum well devices and methods of making the same  
Semiconductor quantum well devices and methods of making the same are described. In one aspect, a device includes a quantum well structure that includes semiconductor layers defining interleaved...
7087924 Gallium-nitride based light emitting diode structure with enhanced light illuminance  
Disclosed is a multi-quantum-well light emitting diode, which makes enormous adjustments and improvements over the conventional light emitting diode, and further utilizes a transparent contact...
7087923 Photon source and a method of fabricating a photon source  
A photon source comprising a quantum dot layer having a plurality of quantum dots with an n-modal distribution in emission wavelength, said n-modal distribution in emission wavelength comprising n...
7077982 Molecular electric wire, molecular electric wire circuit using the same and process for producing the molecular electric wire circuit  
A molecular electric wire that is formed of an environmentally benign ecological material and enables a microscopic wiring, a molecular electric wire circuit using the molecular electric wire, and...
7071492 Thermo-optical device  
A polymer well may be formed over a thermal oxide formed over a semiconductor substrate in one embodiment. The well may include a waveguide and a pair of heaters adjacent the waveguide. Each heater...
7061020 Array substrate for a liquid crystal display device having an improved contact property and fabricating method thereof  
An array substrate for a liquid crystal display device includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate...
7061014 Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film  
Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a...
7049641 Use of deep-level transitions in semiconductor devices  
The invention relates to the design, fabrication, and use of semiconductor devices that employ deep-level transitions (i.e., deep-level-to-conduction-band, deep-level-to-valence-band, or...
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