Matches 1 - 50 out of 472 1 2 3 4 5 6 7 8 9 10 >
Match Document Document Title
7473945 Optical semiconductor integrated circuit device  
Disclosed is an optical semiconductor integrated circuit device has an opening portion in an insulating layer, which is formed in a light receiving region of a photodiode stepwise. Thus, a step of...
7459733 Optical enhancement of integrated circuit photodetectors  
A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a...
7459360 Method of forming pixel sensor cell having reduced pinning layer barrier potential  
A method of forming a pixel sensor cell structure. The method of forming the pixel cell comprises forming a doped layer adjacent to a first side of a transfer gate structure for coupling a...
7456449 Semiconductor apparatus, LED print head, and printer  
A semiconductor apparatus has a substrate to which is attached a thin semiconductor film including at least one semiconductor device. An interconnecting line links the semiconductor film with...
7449732 Substrate with transparent electrodes and devices incorporating it  
The substrate with electrodes is formed of a transparent material onto which is deposited a film ( 1 ) of a transparent conductive material of thickness e 1 and of refractive index n 1 , said film...
7446353 Solid-state imaging apparatus and charge transfer apparatus  
A solid-state imaging apparatus includes a photoelectric conversion section generating a charge by photoelectric conversion; and a charge transfer section having first and second transfer...
7442975 CMOS image sensor and method for fabricating the same  
A CMOS image sensor and a method for fabricating the same prevent a lifting effect of microlenses. Also, a diffused reflection of microlenses is prevented. The CMOS image sensor includes...
7439561 Pixel sensor cell for collecting electrons and holes  
The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present...
7436038 Visible/near infrared image sensor array  
A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the...
7432576 Grid metal design for large density CMOS image sensor  
A new grid metal design for image sensors is disclosed which is comprised of a semiconductor image sensor chip having a pixel region covering most of the chip and a logic circuit region on the chip...
7432543 Image sensor pixel having photodiode with indium pinning layer  
An active pixel using a pinned photodiode with a pinning layer formed from indium is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N − ...
7432536 LED with self aligned bond pad  
A method is disclosed for attaching a bonding pad to the ohmic contact of a diode while reducing the complexity of the photolithography steps. The method includes the steps of forming a blanket...
7423305 Solid-state image sensing device having high sensitivity and camera system using the same  
A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a...
7423302 Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor  
A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of...
7422924 Image device and photodiode structure  
The invention provides a photodiode with an increased charge collection area, laterally spaced from an adjacent isolation region. Dopant ions of a first conductivity type with a first impurity...
7420236 Photoelectric conversion device and manufacturing method thereof  
A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device...
7420231 Solid state imaging pick-up device and method of manufacturing the same  
A proper incident state can be obtained in each pixel in accordance with a distance between an optical system and a sensor photoreceptive portion, and improved photoreceptive efficiency and even...
7417272 Image sensor with improved dynamic range and method of formation  
Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one...
7414276 Solid-state image pickup device and charge transfer device  
A solid-state image pickup device includes a semiconductor substrate, a photosensitive pixel which converts incident light on the semiconductor substrate into a signal charge, and a charge...
7411276 Photosensitive device  
A photosensitive device having at least an insulator layer including a plurality of photoreceiving regions disposed on a substrate. A plurality of conductive patterns is disposed on the insulator...
7411229 Semiconductor device, a manufacturing method thereof, and a camera  
A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for...
7408210 Solid state image pickup device and camera  
An object of the present invention is to simultaneously realize the enlargement of a dynamic range and the downsizing of a pixel. An additional capacitor CS is composed by using: a first capacitor...
7400022 Photoreceiver cell with color separation  
A photoreceiver cell with separation of color components of light incident to its surface, formed in a silicon substrate of the conductivity of the first type with an ohmic contact and comprising:...
7397086 Top-gate thin-film transistor  
A thin-film transistor, such as a top-gate thin-film transistor, is provided herein. The thin-film transistor has a performance-enhancing layer, such as a performance-enhancing bottom layer,...
7397076 CMOS image sensor with dark current reduction  
Disclosed are a CMOS image sensor and a fabrication method thereof, which is adequate to reduce dark current. The CMOS image sensor comprises a device isolation region and an active region, which...
7382009 Solid state image pickup device including an amplifying MOS transistor having particular conductivity type semiconductor layers, and camera using the same device  
To provide an amplification type solid state image pickup device enabling lower noise, higher gain, and higher sensitivity than any conventional amplification type solid state image pickup device....
7382003 Solid-state image pick-up unit and method of manufacturing the same  
A solid-state image pick-up unit comprises: a semiconductor substrate comprising an area in which a photoelectric converting portion is formed; and an electric charge transfer portion that...
7382002 Photo-detector and related instruments  
An apparatus comprising at least one multilayer wafer includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched...
7378691 Solid-state image sensor  
A solid-state image sensor capable of suppressing blooming and increase of a dark current also when an n-type impurity concentration in a transfer channel region is increased is obtained. In this...
7355268 High reflector tunable stress coating, such as for a MEMS mirror  
An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating...
7355228 Image sensor pixel having photodiode with multi-dopant implantation  
An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N − region...
7355227 Detecting pixel matrix integrated into a charge reader circuit  
A matrix of detection pixels and a photoelectric detector that includes a matrix of detection pixels and a reading circuit of loads detected by the detection pixels of the matrix. A detection pixel...
7355222 Imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell  
The invention relates to an imaging device having a pixel cell with a transparent conductive material interconnect line for focusing incident light onto a photosensor and providing an electrical...
7352028 Solid-state imaging devices  
A solid-state imaging device includes: a substrate; a photoelectric transducer that is provided within the substrate and generates light-generated charge in accordance with incident light; a...
7352020 Solid-state image pickup device, and manufacturing method thereof  
The present invention aims to provide a solid-state imaging apparatus that realizes less leakage current, high image quality and low noise during the driving operation, and manufacturing method for...
7329557 Method of manufacturing solid-state imaging device with P-type diffusion layers  
A solid-state imaging device includes: a plurality of N-type photodiode regions formed inside a P-type well; a gate electrode having one edge being positioned adjacent to each of the photodiode...
7323731 Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system  
A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and...
7321141 Image sensor device and manufacturing method thereof  
A semiconductor substrate is provided on which a plurality of shallow trench isolations (STI) defining a plurality of active areas are formed. The active areas comprise a photo sensing region, and...
7309884 Semiconductor light receiving device and method of fabricating the same  
A semiconductor light receiving device is disclosed which is capable of receiving a first wavelength band light beam and a second wavelength band light beam having a shorter wavelength than that of...
7307327 Reduced crosstalk CMOS image sensors  
CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate,...
7307297 Organic photodiode and method for manufacturing the organic photodiode  
In an organic photodiode, in a gap between a transparent anode formed on a glass substrate, and a reflection cathode formed oppositely thereto, a plurality of light receiving parts as layers of...
7301188 CMOS image sensor and method of manufacturing the same  
An image sensor includes a substrate with an epitaxial layer deposited thereon, a plurality of photodiodes buried in the epitaxial layer, and a plurality of field oxide films interposed between the...
7242043 Imaging device and manufacturing method thereof  
Disclosed is an imaging device including a photodiode and floating diffusion region formed to be spaced from each other on a surface layer of a pixel region of a silicon (semiconductor) substrate,...
7238977 Wide dynamic range sensor having a pinned diode with multiple pinned voltages  
A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional...
7238562 Method for fabricating CMOS image sensor  
A method for fabricating a CMOS image sensor is disclosed, to decrease a dark current, which includes the steps of forming a photodiode area in a semiconductor substrate; forming a plurality of...
7235826 Solid-state image pickup device  
A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The...
7227208 Solid-state image pickup apparatus  
The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than...
7217968 Recessed gate for an image sensor  
A novel image sensor cell structure and method of manufacture. The imaging sensor comprises a substrate, a gate comprising a dielectric layer and gate conductor formed on the dielectric layer, a...
7217967 CMOS image sensor and method for manufacturing the same  
A CMOS image sensor and a manufacturing method thereof are disclosed. The gates of the transistors are formed in an active region of a unit pixel, and at the same time, a passivation layer is...
7217953 Technique for suppression of edge current in semiconductor devices  
A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves,...
Matches 1 - 50 out of 472 1 2 3 4 5 6 7 8 9 10 >