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Match Document Document Title
7473935 White-light emitting semiconductor device  
A white-light emitting semiconductor device includes a first light-emitting die, a second light-emitting die, a photostimulable luminescent substance, and a holding assembly. The first...
7473934 Semiconductor light emitting device, light emitting module and lighting apparatus  
An LED array chip ( 2 ) includes blue LEDs ( 6 ) and red LEDs ( 8 ). The blue LEDs ( 6 ) are formed by epitaxial growth on an SiC substrate ( 4 ). Bonding pads ( 46 and 48 ) are formed on the SiC...
7470938 Nitride semiconductor light emitting device  
In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are...
7470933 Organic light emitting display device  
An organic light emitting display device may include: a substrate having first, second and third pixel regions. A first electrode layer may be formed in each of the first, second and third pixel...
7470608 Semiconductor light emitting device and fabrication method thereof  
The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11 ; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a...
7468528 Semiconductor light-emitting device  
A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first...
7465962 Semiconductor light emitting device and manufacturing method therefor  
A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layer 30 including an AlGaInP active layer and a second wafer 23 which transmits light...
7462884 Nitride semiconductor device  
A nitride semiconductor device having excellent ESD tolerance, by preventing uneven distribution of the electric current in the p-side nitride semiconductor layer. The p-side nitride semiconductor...
7462881 Method of fabricating vertical structure LEDs  
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor...
7462869 Semiconductor light emitting device and semiconductor light emitting apparatus  
A first semiconductor light emitting device includes: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major...
7462868 Light emitting diode chip with double close-loop electrode design  
An LED chip with double close-loop electrode design includes a substrate, a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer, a first electrode...
7462867 Group III nitride compound semiconductor devices and method for fabricating the same  
A sapphire substrate 1 is etched so that each trench has a width of 10 μm and a depth of 10 μm were formed at 10 μm of intervals in a stripe pattern. Next, an AlN buffer layer 2 having a...
7460743 Diffusion and laser photoelectrically coupled integrated circuit signal line  
A diffusion and laser photoelectrically coupled integrated circuit signal line, wherein photoelectrically coupled pairs are formed on integrated circuit chips utilizing a diffusion light or a laser...
7456436 LED device having reduced spectrum  
A structure of light emitting diode (LED) effectively reduces its spectral width. The LED structure is applied in a three color mixing of a backlight module to broaden a color space and to improve...
7456435 Light-emitting semiconductor device  
A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor...
7456434 Micro optical bench structure  
A micro optical bench structure and a method of manufacturing a micro optical bench structure are provided. The micro optical bench structure includes: a lower substrate; an upper substrate which...
7453098 Vertical electrode structure of gallium nitride based light emitting diode  
A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively...
7453093 LED package and fabricating method thereof  
The invention provides an LED package capable of effectively releasing heat emitted from an LED chip out of the package and a fabrication method thereof. For this purpose, at least one groove is...
7453092 Light emitting device and light emitting element having predetermined optical form  
A light emitting device having: a predetermined optical form that is provided on a surface of an LED element mounted on a base, the predetermined optical form being made to allow an increase in...
7453091 Gallium nitride-based semiconductor device  
A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type...
7449722 Semiconductor light emitting element  
A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading...
7449721 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
EL display device and a method of manufacturing the same  
To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a...
7446342 Light emitting diode having conductive reflecting layer  
There is provided a semiconductor light emitting diode and a method of manufacturing the same that enable voltage in the forward direction to be decreased while allowing light extraction efficiency...
7446341 Radiation-emitting semiconductor element  
A radiation-emitting semiconductor component having a semiconductor body ( 1 ), which has an active zone ( 2 ), in which, for the purpose of electrical contact connection, a patterned contact layer...
7446338 Display panel  
A display panel includes a transistor array substrate which has a plurality of pixels and is formed by providing a plurality of transistors for each pixel, each of the transistor having a gate, a...
7442962 High-brightness gallium-nitride based light emitting diode structure  
A GaN-based LED structure is provided so that the brightness and lighting efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to...
7442569 Vertical GaN-based LED and method of manufacturing the same  
Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN...
7439609 Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures  
An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first...
7439551 Nitride-based compound semiconductor light emitting device  
The nitride-based compound semiconductor light emitting device includes a first ohmic electrode, a bonding metal layer, a second ohmic electrode, a nitride-based compound semiconductor layer, and a...
7439549 LED module  
An LED module has a carrier, which contains a semiconductor layer and has a planar main area, on which LED semiconductor bodies are applied. Use is preferably made of LED semiconductor bodies which...
7439548 Surface mountable chip  
A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section...
7439546 Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method  
A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as...
7439544 Structure and manufacturing method of an image TFT array  
The present invention provides a manufacturing method of an image TFT array, which includes providing a substrate including a thin film transistor region, a storage capacitor region, a pad region,...
7436873 Optical device and semiconductor laser oscillator  
In an optical device, a slab layer includes an active layer sandwiched between cladding layers. The slab layer has a periodic refractive index profile structure in a two-dimensional plane, as a...
7435994 Semiconductor device and method for fabricating the same  
A spacer layer is formed on a single-crystal substrate and an epitaxially grown layer composed of a group III-V compound semiconductor layer containing a nitride or the like is further formed on...
7435633 Electroluminescence device, manufacturing method thereof, and electronic apparatus  
An organic electroluminescence device including: a substrate having conductivity on at least one side; a first insulation film, formed on one side of the substrate, while having an aperture which...
7429757 Semiconductor light emitting device capable of increasing its brightness  
A semiconductor light emitting device comprises a metallic support plate 1 ; a light-reflective reflector 3 mounted on the support plate 1 and formed with a hole 3 a ; a semiconductor light...
7429754 Semiconductor device, its manufacture method and electronic component unit  
A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support...
7429750 Solid-state element and solid-state element device  
A solid-state element has: a semiconductor layer formed on a substrate, the semiconductor layer having a first layer that corresponds to an emission area of the solid-state element to and a second...
7427783 Top emission organic light emitting diode display using auxiliary electrode to prevent voltage drop of upper electrode  
An organic light emitting diode (OLED) display. The OLED display includes: a lower electrode formed on a layer on an insulating substrate having a thin film transistor. The lower electrode is...
7427772 Semiconductor light emitting device substrate and method of fabricating the same  
A substrate for semiconductor light emitting devices is provided. The substrate is characterized in that the substrate is a single crystal material and has a nanocrystal structure capable of...
7427523 Method of making light emitting device with silicon-containing encapsulant  
A method of making a light emitting device is disclosed. The method includes providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming...
7425726 Electroabsorption modulators and methods of making the same  
Electro-absorption modulators and methods of making the same are described. In one aspect, an electroabsorption modulator includes first and second electrodes, first and second cladding regions, an...
7423719 Optical film using diffraction grating and display device using the same  
An optical diffusion film comprises a plurality of diffraction grating cells formed on a substrate, each cell comprising a plurality of curved gratings disposed in parallel with each other and...
RE40485 Semiconductor light-emitting element  
In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of...
7420998 Semiconductor laser device  
A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film only on the front surface electrode and made of...
7420210 Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor  
A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color...
7417370 OLED device having improved light output  
A bottom-emitting organic light-emitting diode (OLED) device, comprising: a transparent substrate; an optical isolation cavity formed over the substrate having a refractive index lower than the...
7417257 III-nitride device with improved layout geometry  
A III-nitride power device for controlling high currents as an interdigitated electrode pattern for increasing device rating while decreasing device dimensions. Fingers of the interdigitated...
7417256 Display device and manufacturing method thereof  
It is an object of the present invention to prevent an influence of voltage drop due to wiring resistance, trouble in writing of a signal into a pixel, and trouble in gray scales, and provide a...
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