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7442995 |
Semiconductor device and method of manufacturing the same
Each of channel regions 2 a and 3 b is covered by a gate electrode 6 via a gate insulation film 5 and side wall spacers 9 from its top face to both side faces along an x-direction. In...
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7423330 |
Semiconductor device with strain
A semiconductor device includes: a semiconductor substrate having a p-MOS region; an element isolation region formed in a surface portion of the semiconductor substrate and defining p-MOS active...
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7422953 |
Semiconductor device and method of manufacturing the same
There is provided a method of manufacturing a semiconductor device, including forming a structure including a first layer containing Si and a metal oxide layer in contact with the first layer, the...
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7411252 |
Substrate backgate for trigate FET
Disclosed is a tri-gate field effect transistor with a back gate and the associated methods of forming the transistor. Specifically, a back gate is incorporated into a lower portion of a fin. A...
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7408226 |
Electronic card with protection against aerial discharge
An electronic card includes a card terminal which is exposed on a surface of a card, a semiconductor integrated circuit chip including an insulated-gate field effect transistor, and a protection...
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7402873 |
Semiconductor integrated circuit device having deposited layer for gate insulation
A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main...
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