<?xml version="1.0" encoding="UTF-8"?>

<rss version="2.0">

<channel>
<image>
<title>freepatentsonline.com</title>
<width>141</width>
<height>131</height>
<link>http://www.freepatentsonline.com/index.html</link>
<url>http://www.freepatentsonline.com/images/logo.gif</url>
</image>

<title>freepatentsonline.com: Static information storage and retrieval</title>
<link>http://www.freepatentsonline.com/result.html?query_txt=ccl/365%20and%20isd/11/05/2009&amp;usapp=on</link>
<description>USPTO Class 365 Static information storage and retrieval</description>
<language>en-us</language>
<lastBuildDate>Thu, 05 Nov 2009 03:35:38 EST</lastBuildDate>

<item>
<title><![CDATA[SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF]]></title>
<link>http://www.freepatentsonline.com/y2009/0273992.html</link>
<description><![CDATA[A semiconductor device includes a pad configured to receive a data strobe signal, and a path selector configured to output the data strobe signal through a corresponding input path during a normal operation, and to output the data strobe signal through a plurality of input paths in response to a path selection signal during a test operation.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[APPARATUS FOR REMOVING CROSSTALK IN SEMICONDUCTOR MEMORY DEVICE]]></title>
<link>http://www.freepatentsonline.com/y2009/0273995.html</link>
<description><![CDATA[An apparatus for removing crosstalk in a semiconductor memory device includes pads for receiving externally provided signals, transmission lines for delivering the signals received by each of the pads to corresponding elements in the apparatus, and capacitors, coupled between adjacent ones of the lines, for adjusting the transmission delay of the signals depending on a signal transmission mode between the adjacent lines.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[BITCELL CURRENT SENSE DEVICE AND METHOD THEREOF]]></title>
<link>http://www.freepatentsonline.com/y2009/0273998.html</link>
<description><![CDATA[A memory device includes a sense amplifier to sense the state of a bitcell. The sense amplifier includes two input terminals connected via a switch. One of the input terminals is connected to a node, whereby a current through the node represents a difference in current drawn by a bitcell and a reference current. During a first phase, the switch between the input terminals of the sense amplifier is closed, so that a common voltage is applied to both input terminals. During a second phase, the switch is opened, and the sense amplifier senses a state of information stored at the bitcell based on the current through the node. By using the switch to connect and disconnect the inputs of the sense amplifier in the two phases, the accuracy and speed with which the state of the information stored at the bitcell can be determined is improved.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[SEMICONDUCTOR DEVICE]]></title>
<link>http://www.freepatentsonline.com/y2009/0273961.html</link>
<description><![CDATA[A technique for increasing rewriting current without increasing a power supply voltage and also reducing location dependency inside a memory array of a resistive state after the rewriting is provided in a resistance change memory in which the resistance value of a memory cell changes between logical values “1” and “0”. In the resistance change memory, bit lines are formed into a layered structure, the bit line select switches for connecting to the global bit line are provided at both ends of the local bit line, and a control method of the bit line select switches is changed in the writing and the reading, thereby realizing the optimum array configurations for each of them. More specifically, in the writing and the reading, two current paths are provided in parallel by turning ON the bit line select switches simultaneously.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[FOUR-TERMINAL MULTIPLE-TIME PROGRAMMABLE MEMORY BITCELL AND ARRAY ARCHITECTURE]]></title>
<link>http://www.freepatentsonline.com/y2009/0273962.html</link>
<description><![CDATA[Embodiments disclosed herein relate to a non-volatile memory bitcell and arrays thereof, methods of detecting whether the bitcell is in a programmed state, methods of detecting whether the bitcell is in an erased state, methods of setting the bitcell in a programmed state and methods of setting the bitcell in an erased state. The non-volatile memory bitcell may be a four terminal bitcell. The bitcell may have a pull-up electrode, a pull-down electrode, a cantilever electrode and a contact electrode. An NMOS transistor may be coupled to the contact electrode. Depending upon the orientation of the word line, the current through the bitcell may be measured on the bitline, the data line or the pull-down electrode.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[METHOD AND APPARATUS FOR IMPLEMENTING SELF-REFERENCING READ OPERATION FOR PCRAM DEVICES]]></title>
<link>http://www.freepatentsonline.com/y2009/0273968.html</link>
<description><![CDATA[A method of implementing a self-referencing read operation for a PCRAM array includes applying a stimulus to a bit line associated with a selected phase change element (PCE) to be read; comparing a first voltage on a node of the bit line with a second voltage on a delay node, wherein the second voltage represents a delayed voltage with respect to the first voltage due to a resistance/capacitance time constant associated therewith; and determining whether, during the read operation, the first voltage drops below the value of the second voltage; wherein in the event the first voltage drops below the value of the second voltage during the read operation, the PCE is determined to be programmed to an amorphous state and in the event the first voltage does not drop below the value of the second voltage, the PCE is determined to be programmed to a crystalline state.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[CAPACITIVE DIVIDER SENSING OF MEMORY CELLS]]></title>
<link>http://www.freepatentsonline.com/y2009/0273969.html</link>
<description><![CDATA[The present disclosure includes devices and methods for sensing resistance variable memory cells. One device embodiment includes at least one resistance variable memory cell, and a capacitive divider configured to generate multiple reference levels in association with the at least one resistance variable memory cell.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[SEMICONDUCTOR MEMORY DEVICE, OPERATING METHOD THEREOF, AND COMPRESSION TEST METHOD THEREOF]]></title>
<link>http://www.freepatentsonline.com/y2009/0273991.html</link>
<description><![CDATA[A semiconductor memory device including a plurality of banks, each including a plurality of memory cells, a pattern signal generator configured to generate pattern signals having combinations in response to an input signal applied through an arbitrary pad in a compression test mode. Input paths are configured to transfer the plurality of pattern signals to the corresponding banks.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[Integrated Circuit, Memory Cell Array, Memory Module, and Method of Operating an Integrated Circuit]]></title>
<link>http://www.freepatentsonline.com/y2009/0273966.html</link>
<description><![CDATA[According to one embodiment of the present invention, an integrated circuit includes a plurality of thermal selectable memory cells, each memory cell being connected to a conductive line, the conductive line having a first portion for applying a heating current, and a second portion for applying a programming current. The integrated circuit is configured such that the heating current and the programming current can be routed respectively to the first and the second portion of the conductive line independently from each other.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[MEMORY DEVICE INCLUDING A PROGRAMMABLE RESISTANCE ELEMENT]]></title>
<link>http://www.freepatentsonline.com/y2009/0273970.html</link>
<description><![CDATA[Disclosed are a phase change memory with improved retention characteristic of a phase change device, and a method for refreshing the phase change memory. The fact that a memory is a DRAM interface compatible memory is exploited. There are provided dummy cells stressed in accordance with the number of times of read and write operations. Changes in the resistance value of the dummy cells are detected by comparator circuits. If the resistance value have been changed beyond a predetermined reference value (that is, changed to a low resistance), a refresh request circuit requests an internal circuit, not shown, to effect refreshing. The memory cells and the dummy cells are transitorily refreshed and correction is made for variations in the programmed resistance value of the phase change devices to assure the margin as well as to improve retention characteristic.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[SEMICONDUCTOR DEVICE HAVING MULTIPLE I/O MODES]]></title>
<link>http://www.freepatentsonline.com/y2009/0273985.html</link>
<description><![CDATA[Semiconductor device having multiple I/O modes. The device includes a data buffer configured to receive data; a strobe input buffer configured to receive a data strobe signal, a phase controller configured to shift a phase of the data strobe signal by different numbers of degrees, including 0 degrees, according to input modes and a data detector configured to detect the data in response to the data strobe signal output from the phase controller.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF]]></title>
<link>http://www.freepatentsonline.com/y2009/0273993.html</link>
<description><![CDATA[A semiconductor memory device that generates a data strobe reset signal for preventing ring-back of a data strobe signal, and an operation method thereof. The semiconductor memory device includes a pulse signal generating unit for generating first and second pulse signals by synchronizing a write instruction with first and second internal clock signals, a reset signal generating unit for generating a reset signal having an activation width setup in response to the first and second pulse signals, and a data strobe reset signal generating unit for generating a data strobe reset signal by shifting the second pulse signal as much as a predetermined burst length and limiting an activation period of the data strobe reset signal in response to the reset signal.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[DUAL MODE ACCESSING SIGNAL CONTROL APPARATUS AND DUAL MODE TIMING SIGNAL GENERATING APPARATUS]]></title>
<link>http://www.freepatentsonline.com/y2009/0273994.html</link>
<description><![CDATA[A dual mode accessing signal control apparatus for being used in a dummy cells set of a memory, and a dual mode timing signal generating apparatus comprising a dual mode accessing signal control apparatus are provided. The dual mode accessing signal control apparatus respectively generates a write delay signal and a read signal during the write and the read process. The memory is thereby capable of self-timing its write and the read process, and is able to generate a wordline signal with a shorter width in the write process to ensure an early start to precharging. As a result, the whole duty period of the memory can be shortened.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[Controlling Apparatus and Controlling Method for Controlling a Pre-Charge Activity on a SRAM Array]]></title>
<link>http://www.freepatentsonline.com/y2009/0273997.html</link>
<description><![CDATA[A controlling apparatus and a controlling method for controlling a pre-charge activity on a SRAM array are provided. The controlling apparatus comprises: a detecting module, a controlling module and a pre-charge module. The detecting module is to detect whether the row address of the SRAM array in operation is changed and generate a row-changing signal according to the detection result; the controlling module is to detect an operation mode of the SRAM array and generate a disable signal according to the row-changing signal and the operation mode; and the pre-charge module is to generate a pre-charge signal according to a pseudo-pre-charge signal and the disable signal, wherein the pre-charge signal substantially controls the pre-charge activity on the SRAM cell in operation.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[SYSTEM AND METHOD OF COMMAND BASED AND CURRENT LIMIT CONTROLLED MEMORY DEVICE POWER UP]]></title>
<link>http://www.freepatentsonline.com/y2009/0274000.html</link>
<description><![CDATA[Devices and systems for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[METHOD AND INTEGRATED CIRCUIT FOR DETERMINING THE STATE OF A RESISTIVITY CHANGING MEMORY CELL]]></title>
<link>http://www.freepatentsonline.com/y2009/0273967.html</link>
<description><![CDATA[A method and an integrated circuit for determining the state of a resistivity changing memory cell. In one embodiment the method includes detecting a first resistance of the resistivity changing memory cell, determining whether the first resistance value is smaller than a predetermined threshold value thereby determining a first result value, initializing the resistivity changing memory cell into one of at least four resistivity changing memory states, detecting a second resistance value of the resistivity changing memory cell, determining whether the second resistance value is smaller than the predetermined threshold value determining a second result value, and determining the state of the resistivity changing memory cell state using the first and the second result values.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[DATA OUTPUT CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS]]></title>
<link>http://www.freepatentsonline.com/y2009/0273987.html</link>
<description><![CDATA[A data output circuit of a semiconductor memory apparatus includes: a control unit that outputs a first standby instruction signal, a second standby instruction signal, a first output instruction signal, and a second output instruction signal in response to an input of a standby instruction signal, an output instruction signal, a first test signal, and a second test signal; a first output driver that causes first data to be output or to enter a standby state according to whether or not the first standby instruction signal or the first output instruction signal is enabled; and a second output driver that causes second data to be output or to enter a standby state according to whether or not the second standby instruction signal or the second output instruction signal is enabled.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[Memory testing system and memory module thereof]]></title>
<link>http://www.freepatentsonline.com/y2009/0273996.html</link>
<description><![CDATA[A testing system with data compressing function includes a third data end, a first encoder, and a second encoder. The testing system receives testing data and testing address for testing if any memory cell fails in a memory. The memory includes a first data end, a second end, and an address end. The first encoder encodes the testing data to the data type of the first data end according to the testing address. The second encoder encodes the testing data to the data type of the second data end according to the testing address. In this way, the corresponding memory cells of the first data and second ends store same testing data.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[NAND ARCHITECTURE MEMORY WITH VOLTAGE SENSING]]></title>
<link>http://www.freepatentsonline.com/y2009/0273980.html</link>
<description><![CDATA[A NAND architecture non-volatile memory voltage sensing data read/verify process and sense amplifier has been described that senses data in floating gate or floating node field effect transistor memory cells using a voltage sensing data read/verify process. The voltage sensing process utilized a reference NAND string and reference memory cell that is coupled to a reference bit line. A voltage is precharged onto a bit line to be read and an associated reference bit line. The bit line is then coupled to a NAND string and selected memory cell while the reference bit line is coupled to a reference NAND string and selected reference memory cell. The relative voltage level of the bit line and reference bit line are then set by the relative currents flowing through the coupled NAND string and reference NAND string, and the voltage differential read by a coupled voltage sense amplifier.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[CONTINUOUSLY DRIVING NON-VOLATILE MEMORY ELEMENT]]></title>
<link>http://www.freepatentsonline.com/y2009/0273971.html</link>
<description><![CDATA[Embodiments discussed herein generally relate to utilizing non-volatile memory elements to continuously drive other circuitry. There are many advantages to utilizing non-volatile memory to continuously drive other circuitry. For example, back end of the line (BEOL) compatible process may be used to fabricate the non-volatile memory elements that does not affect any front end of the line (FEOL) devices. This allows for an earlier integration of non-volatile technology into the latest state-of-the-art semiconductor process nodes. This is specifically important for FPGA and CPLDs, which make use of the latest process nodes.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[Nonvolatile Memory, Verify Method Therefor, and Semiconductor Device Using the Nonvolatile Memory]]></title>
<link>http://www.freepatentsonline.com/y2009/0273974.html</link>
<description><![CDATA[Provided is a nonvolatile memory that realizes a high-speed verify operation. During verify writing/erasing, the writing/erasing and reading are performed at the same time. As to a circuit that performs a verify operation, for instance, there is obtained a construction where the output from a sense amplifier ( 102 ) that performs reading is connected to a switch which switches an operation voltage applied to a memory cell in accordance with a verify signal Sv, and the verify operation is finished concurrently with having the verify signal Sv switched. By obtaining such circuit construction and simultaneously performing writing/erasing and reading, it becomes possible to perform high-speed verify writing/erasing.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[MULTILAYERED NONVOLATILE MEMORY WITH ADAPTIVE CONTROL]]></title>
<link>http://www.freepatentsonline.com/y2009/0273977.html</link>
<description><![CDATA[A method and device for adaptive control of multilayered nonvolatile semiconductor memory are provided, the device including memory cells organized into groups and a control circuit having a look-up matrix for providing control parameters for each of the groups, where characteristics of each group are stored in the look-up matrix, and the control parameters for each group are responsive to the stored characteristics for that group; the method including organizing memory cells into groups, storing characteristics for each group in a look-up matrix, providing control parameters for each of the groups, where the control parameters for each group are responsive to its stored characteristics, and driving each memory cell in accordance with its provided control parameters.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND DATA WRITE METHOD]]></title>
<link>http://www.freepatentsonline.com/y2009/0273982.html</link>
<description><![CDATA[A semiconductor memory device includes an output buffer which outputs an enable signal which makes an external memory device operable, an address buffer which generates an address at which data is held in the external memory device, an input buffer which receives the data held at the address from the external memory device, and a write data buffer which holds the data received by the input buffer, and writes the data in a plurality of memory cells at once. Whenever the write data buffer writes data, the input buffer receives, from the external memory, the data having a size which is written in the memory cells at once.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[NONVOLATILE MEMORY DEVICE AND PROGRAMMING METHOD]]></title>
<link>http://www.freepatentsonline.com/y2009/0273983.html</link>
<description><![CDATA[Disclosed is a programming method for a nonvolatile memory device. The method includes; charging word-line signal lines to a pass voltage during a pass voltage charge operation, simultaneously executing an initial precharge operation for strings including program-inhibited cells during the pass voltage charge operation, and applying the pass voltage to word lines from the word-line signal lines in response to a block-selection enabling signal]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[Non-Volatile Memory With Redundancy Data Buffered in Remote Buffer Circuits]]></title>
<link>http://www.freepatentsonline.com/y2009/0273986.html</link>
<description><![CDATA[A memory has defective locations in its user portion replaceable by redundant locations in a redundant portion. Data latches in column circuits of user and redundant portions allow data sensed from or to be written to a memory to be exchanged with a data bus. A remote redundancy scheme has the redundant data available from a central buffer accessible by any number of column circuits. Redundant data buffer circuits enable bus exchange with data from the user data latches except for defective locations when data are taken from the central buffer. In this way only addressing for the user portion is used for bus exchange. Also, accessibility to the redundant data will not be restricted by the locations of the column circuits relative to the redundant data latches and the buffered redundant data can be accessed at a finer granularity than that imposed by the column circuits.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[CIRCUIT AND METHODS TO IMPROVE THE OPERATION OF SOI DEVICES]]></title>
<link>http://www.freepatentsonline.com/y2009/0273988.html</link>
<description><![CDATA[According to the present invention, a circuit and methods for enhancing the operation of SOI fabricated devices are disclosed. In a preferred embodiment of the present invention, a pulse discharge circuit is provided. Here, a circuit is designed to provide a pulse that will discharge the accumulated electrical charge on the body of the SOI devices in the memory subarray just prior to the first access cycle. As explained above, once the accumulated charge has been dissipated, the speed penalty for successive accesses to the memory subarray is eliminated or greatly reduced. With a proper control signal, timing and sizing, this can be a very effective method to solve the problem associated with the SOI loading effect. Alternatively, instead of connecting the bodies of all SOI devices in a memory circuit to ground, the bodies of the N-channel FET pull-down devices of the local word line drivers can be selectively connected to a reference ground. This would enable the circuit to retain most of the speed advantages associated with SOI devices while overcoming the loading problem described above. With this preferred embodiment of the present invention, the major delay caused by the bipolar loading effect is minimized while the speed advantage due to providing a lower, variable V t  effect is preserved. The overall body resistance of the individual devices has a minimal effect on the device body potential.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[SYSTEM FOR PROVIDING ON-DIE TERMINATION OF A CONTROL SIGNAL BUS]]></title>
<link>http://www.freepatentsonline.com/y2009/0273960.html</link>
<description><![CDATA[A system for providing on-die termination (ODT) of a control signal bus. The system includes a memory device that includes a plurality of data bus connectors, one or both of a load signal connector and a reset signal connector, a control bus connector, an ODT, and a mechanism. The ODT is in communication with the control bus connector, and the ODT provides a level of termination resistance to a control bus connected to the control bus connector. The mechanism latches data received via the data bus connectors in response to a signal received via one or both of the load signal connector and the reset signal connector. The data is utilized to set the level of termination resistance provided by the ODT.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[MULTI-LEVEL CELL ACCESS BUFFER WITH DUAL FUNCTION]]></title>
<link>http://www.freepatentsonline.com/y2009/0273973.html</link>
<description><![CDATA[An access buffer, such as page buffer, for writing to non-volatile memory, such as Flash, using a two-stage MLC (multi-level cell) operation is provided. The access buffer has a first latch for temporarily storing the data to be written. A second latch is provided for reading data from the memory as part of the two-stage write operation. The second latch has an inverter that participates in the latching function when reading from the memory. The same inverter is used to produce a complement of an input signal being written to the first latch with the result that a double ended input is used to write to the first latch.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[NON-VOLATILE MULTILEVEL MEMORY CELLS WITH DATA READ OF REFERENCE CELLS]]></title>
<link>http://www.freepatentsonline.com/y2009/0273975.html</link>
<description><![CDATA[Embodiments of the present disclosure provide methods, devices, modules, and systems for non-volatile multilevel memory cell data retrieval with data read of reference cells. One method includes programming at least one data cell of a number of data cells coupled to a selected word line to a target data threshold voltage (Vt) level corresponding to a target state; programming at least one reference cell of a number of reference cells coupled to the selected word line to a target reference Vt level, the number of reference cells interleaved with the number of data cells; determining a reference state based on a data read of the at least one reference cell; and changing a state read from the at least one data cell based on a change of the at least one reference cell.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[SEMICONDUCTOR MEMORY DEVICE WHICH INCLUDES MEMORY CELL HAVING CHARGE ACCUMULATION LAYER AND CONTROL GATE]]></title>
<link>http://www.freepatentsonline.com/y2009/0273976.html</link>
<description><![CDATA[A semiconductor memory device includes memory cells, a source line, a word line, a bit line, and a driver circuit. The memory cells are formed on a semiconductor layer and have a charge accumulation layer and a control gate on the charge accumulation layer. The word line is connected to gate of the memory cell. The bit line is electrically connected to a drain of the memory cell. The source line is electrically connected to a source of the memory cell. The driver circuit varies potential of the semiconductor layer in conjunction with potential of the source line.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[PROGRAMMING METHOD TO REDUCE WORD LINE TO WORD LINE BREAKDOWN FOR NAND FLASH]]></title>
<link>http://www.freepatentsonline.com/y2009/0273979.html</link>
<description><![CDATA[A NAND architecture non-volatile memory device and programming process programs the various cells of strings of non-volatile memory cells by the application of differing word line pass voltages (Vpass) to the unselected word lines adjacent to the selected word line and memory cell being programmed in order to reduce voltage differences between the word lines of the memory cell string or array during a programming cycle. This allows the word line to word line voltage differential to be reduced and thus decreases the likelihood of breakdown or punch through of the insulator materials placed between the adjacent word lines.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[BIASING SYSTEM AND METHOD]]></title>
<link>http://www.freepatentsonline.com/y2009/0273984.html</link>
<description><![CDATA[Embodiments are provided that include a memory system that includes a memory system, having an access device coupled between a global line and a local line and a voltage source coupled to the global line and configured to output a bias voltage on the global line when the memory system is in a non-operation state. The access device is selected when the memory system is in the non-operation state, and the access device is deselected when the memory system is in an other state. Further embodiments provide, for example, a method that includes coupling a global access line to a local access line, biasing the local access line to a voltage other than a negative supply voltage while a memory device is in a first state and uncoupling the global access line from the local access line while the memory device is in an other state.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF PROCESSING ADDRESS AND COMMAND SIGNALS THEREOF]]></title>
<link>http://www.freepatentsonline.com/y2009/0274002.html</link>
<description><![CDATA[A semiconductor integrated circuit device includes an input unit configured to receive address and command signals, an internal address generator configured to output an internal address signal by adjusting a timing of the input address signal to correspond to a predetermined internal signal processing timing margin, and an internal command generator configured to output an internal command having a predetermined time difference from the internal address signal by adjusting a timing of the input command signal.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[SEMICONDUCTOR INTEGRATED CIRCUIT]]></title>
<link>http://www.freepatentsonline.com/y2009/0273870.html</link>
<description><![CDATA[The present invention is provided to suppress occurrence of an erroneous operation in a protection circuit due to a relatively small power source fluctuation such as a power source noise. The protection circuit has a first resistor and a capacitor connected in series between a power source line and a ground line, an inverter whose input is connected between the first resistor and the capacitor, and a MOS transistor whose gate electrode receives an output of the inverter and whose drain electrode and source electrode are connected to the power source line and the ground line. When a high voltage fluctuation occurs in the power source line, a level change at a connection point between the first resistor and the capacitor is delayed according to a time constant. By the delay, the MOS transistor that receives an output of the inverter is temporarily turned on and discharges a high voltage to the ground line. Since an output of the inverter is pulled down to the ground line via a second resistor, even if an output of the inverter fluctuates undesirably, fluctuations in a gate input of the MOS transistor are suppressed.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[NAND FLASH MEMORY]]></title>
<link>http://www.freepatentsonline.com/y2009/0273978.html</link>
<description><![CDATA[A NAND flash memory has a control circuit. The control circuit applies a writing voltage between a control gate and a well by applying a first voltage to the well and a positive second voltage higher than the first voltage to the control gate during the writing operation, and then the control circuit applies a detrapping voltage between the control gate and the well by applying a third voltage to the control gate and a positive fourth voltage higher than the third voltage to the well before the verification reading operation.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
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<item>
<title><![CDATA[Methods and apparatuses for programming flash memory using modulated pulses]]></title>
<link>http://www.freepatentsonline.com/y2009/0273981.html</link>
<description><![CDATA[Methods and apparatuses for programming non-volatile semiconductor memory devices by using modulated pulses are disclosed. Embodiments generally comprise a pulse generator, to create a sequence of pulses and set a threshold voltage of a non-volatile memory cell, and a pulse coupler. Alternative embodiments may include a threshold verifier capable of verifying that the threshold voltage is set within an acceptable voltage range of a target threshold voltage. A pulse width modulator in some apparatus embodiments may modulate the pulse durations early in the sequence when programming fast bits and late in the sequence when programming slow bits. Method embodiments generally comprise generating a sequence of pulses, applying the sequence of pulses to a memory cell to set a threshold voltage of the memory cell, and modulating among pulses in the sequence the parameters of pulse duration, pulse separation time, and step voltage magnitude.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
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<item>
<title><![CDATA[Synchronous Command Base Write Recovery Time Auto Precharge Control]]></title>
<link>http://www.freepatentsonline.com/y2009/0273989.html</link>
<description><![CDATA[Methods of operating a memory device and memory devices are provided. For example, a method of operating a memory array is provided that includes a synchronous path and an asynchronous path. A Write-with-Autoprecharge signal is provided to the synchronous path, and various bank address signals are provided to the asynchronous path. In another embodiment, the initiation of the bank address signals may be provided asynchronously to the assertion of the Write-with-Autoprecharge signal.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
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<item>
<title><![CDATA[SEMICONDUCTOR DEVICE]]></title>
<link>http://www.freepatentsonline.com/y2009/0273990.html</link>
<description><![CDATA[There is provided a semiconductor memory device, including: a plurality of bank groups each comprising a plurality of banks; a plurality of data pads grouped by a predetermined number for receiving data for the bank groups, wherein the data pads are divided into a plurality of first pad groups receiving data and a plurality of second pad groups selectively receiving data according to a data input/output option value; a first driving unit configured to drive data input via the first pad group to transfer the data input via the first pad group to the bank group corresponding to the first pad group; a second driving unit configured to drive data input via the second pad group to transfer the data input via the second pad group to the bank group corresponding to the second pad group; and a third driving unit configured to drive data input via the first pad group to transfer the data input via the first pad group to the bank group corresponding to the second pad group in response to the data input/output option value.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
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<item>
<title><![CDATA[SENSE AMPLIFIER AND DATA SENSING METHOD THEREOF]]></title>
<link>http://www.freepatentsonline.com/y2009/0273999.html</link>
<description><![CDATA[A data sensing method for sensing data stored in first and second memory cells includes the steps of: setting a first voltage according to a bit-line voltage corresponding to the first memory cell in response to an enabled level of a first clock signal; providing the first voltage as a sensing voltage in response to a disabled level of the first clock signal; comparing the sensing voltage with a reference voltage to generate a first output voltage; setting a second voltage according to a bit-line voltage corresponding to the second memory cell in response to an enabled level of a second clock signal, a phase difference between the first and second clock signals being 180 degrees; providing the second voltage as the sensing voltage in response to a disabled level of the second clock signal; and comparing the sensing voltage with the reference voltage to generate a second output voltage.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
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<item>
<title><![CDATA[SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME]]></title>
<link>http://www.freepatentsonline.com/y2009/0274001.html</link>
<description><![CDATA[Semiconductor memory device and method for operating the same includes a data output unit configured to output data in synchronization with a data output clock and a clock control unit configured to selectively transfer the data output clock to the data output unit under the control of a read command.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
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<item>
<title><![CDATA[NONVOLATILE SEMICONDUCTOR MEMORY DEVICE]]></title>
<link>http://www.freepatentsonline.com/y2009/0273964.html</link>
<description><![CDATA[A nonvolatile semiconductor memory device comprises: a two terminal structured variable resistive element, wherein resistive characteristics defined by current-voltage characteristics at both ends transit between low and high resistance states stably by applying a voltage satisfying predetermined conditions to the both ends, a transition from the low resistance state to the high resistance state occurs by applying a voltage of a first polarity whose absolute value is at or higher than a first threshold voltage, and the reverse transition occurs by applying a voltage of a second polarity whose absolute value is at or higher than a second threshold voltage; a load circuit connected to the variable resistive element in series having an adjustable load resistance; and a voltage generation circuit for applying a voltage to both ends of a serial circuit; wherein the variable resistive element can transit between the states by adjusting a resistance of the load circuit.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
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<item>
<title><![CDATA[MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME]]></title>
<link>http://www.freepatentsonline.com/y2009/0273045.html</link>
<description><![CDATA[A magnetic memory device includes a common line; a first write-in diode, a readout diode and a second write-in diode being connected to the common line in parallel. The magnetic memory device further includes a magnetic tunnel junction structure connected to the readout diode, first and second write-in conductors disposed at both sides of the magnetic tunnel junction structure and connected to the first and second write-in diodes, respectively and a first write-in line, a readout line and a second write-in line, which are connected to the first write-in conductor, the magnetic tunnel injection structure, and the second write-in conductor, respectively.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
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<item>
<title><![CDATA[Nonvolatile Memory Device]]></title>
<link>http://www.freepatentsonline.com/y2009/0273965.html</link>
<description><![CDATA[Ferromagnetic layers ( 18, 22 ) have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers ( 18, 22 ) is substantially zero. That is, the ferromagnetic layers ( 18, 22 ) are exchange-coupled with a nonmagnetic layer ( 20 ) interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers ( 18, 22 ) forming the SAF structure is substantially zero, the magnetization of a recording layer (RL) is determined by the magnetization of a ferromagnetic layer ( 14 ). Therefore, the ferromagnetic layer ( 14 ) is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers ( 18, 22 ) are made of a CoFe alloy having a high exchange-coupling force.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[MAGNETIC LOGIC ELEMENT WITH TOROIDAL MULTIPLE MAGNETIC FILMS AND A METHOD OF LOGIC TREATMENT USING THE SAME]]></title>
<link>http://www.freepatentsonline.com/y2009/0273972.html</link>
<description><![CDATA[A magnetic logic element with toroidal magnetic multilayers ( 5,6,8,9 ). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers ( 5,6,8,9 ) deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core ( 10 ) in the closed toroidal section. Said magnetic multilayers ( 5,6,8,9 ) unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit ( 5,6,8,9 ), the input signal lines A′, B′, C′ and an output signal line O′ are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
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<item>
<title><![CDATA[MEMORY CONTROLLER-ADAPTIVE 1T/2T TIMING CONTROL]]></title>
<link>http://www.freepatentsonline.com/y2009/0276597.html</link>
<description><![CDATA[Circuits, methods, and apparatus that adaptively control 1T and 2T timing for a memory controller interface. An embodiment of the present invention provides a first memory interface as well as an additional memory interface, each having a number of address and control lines. The address and control lines of the redundant memory interface may be individually enabled and disabled. If a line in the additional interface is enabled, it and its corresponding line in the first interface drive a reduced load and may operate at the higher 1T data rate. If a line in the additional interface is disabled, then its corresponding line in the first interface drives a higher load and may operate at the slower 2T data rate. In either case, the operating speed of the interface may also be considered in determining whether each line operates with 1T or 2T timing.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
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<item>
<title><![CDATA[SEMICONDUCTOR STORAGE DEVICE, SEMICONDUCTOR STORAGE DEVICE MANUFACTURING METHOD AND PACKAGE RESIN FORMING METHOD]]></title>
<link>http://www.freepatentsonline.com/y2009/0273963.html</link>
<description><![CDATA[A ferroelectric capacitor comprising a transistor layer superimposed on a semiconductor substrate, a ferroelectric capacitor layer provided superior to the transistor layer, a wiring layer provided superior to the ferroelectric capacitor layer, and a passivation film. Further, at least one layer of barrier film capable of inhibiting penetration of moisture and hydrogen into the underlayer is provided between the ferroelectric capacitor layer and the passivation film, and the passivation film is characterized by containing a novolac resin.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

<item>
<title><![CDATA[SURFACE TREATMENT TO IMPROVE RESISTIVE-SWITCHING CHARACTERISTICS]]></title>
<link>http://www.freepatentsonline.com/y2009/0272961.html</link>
<description><![CDATA[This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a semiconductor device layer to create defects having a deliberate depth profile, one may create multistable memory cells having more consistent electrical parameters. For example, in a resistive-switching memory cell, one may obtain a tighter distribution of set and reset voltages and lower forming voltage, leading to improved device yield and reliability. In at least one embodiment, the depth profile is selected to modulate the type of defects and their influence on electrical properties of a bombarded metal oxide layer and to enhance uniform defect distribution.]]></description>
<pubDate>Thu, 05 Nov 2009 08:00:00 EST</pubDate>
</item>

</channel>
</rss>
