DETAILED DESCRIPTION OF THE INVENTION

[0009] Referring to FIG. 1 a, there is shown a cross-sectional view of a semiconductor substrate 10 , made typically of single crystalline silicon. The substrate 10 has a number of shallow trench isolations 12 provided therein. The process of forming sublithographic openings will be described with regard to FIGS. 1 a - 1 g which shows the formation of a floating gate over the substrate 10 . However, it will be understood by those skilled in the art that the present invention is not limited to the formation of floating gates. Rather, the present invention of forming a sublithographic opening can be made in any material irrespective of the presence of trench isolations 12 .

[0010] A first layer of silicon oxide or silicon dioxide 14 (on the order of 50 angstroms) is formed on a first surface (top surface) of the substrate 10 . This can be done, for example, by either Chemical Vapor Deposition or by thermally converting the Silicon to Silicon Dioxide. Eventually, the layer 14 of silicon (di)oxide (as used hereinafter (di)oxide shall refer to both silicon oxide as well as silicon dioxide) serves as the gate coupling oxide. A first layer 16 of polysilicon or amorphous silicon 16 (on the order of 600 angstroms) is deposited on the layer 14 of silicon (di)oxide. This can be done, for example, by plasma enhance deposition method or by high temperature method where compounds of silicon are reduced to silicon. As used hereinafter, Polysilicon will refer to both amorphous silicon as well as polysilicon. Finally, a layer of silicon nitride 18 (on the order of 300 angstroms) is conformally deposited on the first layer 16 of Polysilicon. This can be done, for example, by plasma enhanced deposition method or by high temperature method where compounds of silicon, such as SiH ₄ , SiH ₂ Cl ₂ and other gases like NH ₃ are used to form the layer 18 of silicon nitride. All of the foregoing deposition processes are well known in the art. The resultant structure is shown in FIG. 1 a.

[0011] A second layer of Polysilicon 20 (on the order of 450 angstroms) is then deposited on the structure shown in FIG. 1 a, on top of the layer 18 of silicon nitride. The resultant structure is shown in FIG. 1 b. The second layer 20 of Polysilicon can be deposited by conventional well-known techniques such as reduction of gaseous compounds of silicon.

[0012] Photoresist 22 is then applied across the structure of FIG. 1 b and lithographic openings 24 are formed therein. The lithographic openings 24 are formed in locations where ultimately the sublithographic openings in the first layer 16 of Polysilicon will be formed. Using well known photoresist exposure and removal techniques, lithographic openings 24 are formed. The resultant structure is formed in FIG. 1 c.

[0013] Using the photoresist 22 as the mask, the exposed second layer of Polysilicon 20 in the openings 24 are then removed using well known techniques such as RIE anisotropic etch with silicon nitride as the etch stop. The anisotropic etching of the second layer 20 of Polysilicon proceeds until the layer 18 of silicon nitride is exposed. The resultant structure is shown in FIG. 1 d.

[0014] The photoresist 22 is then removed. This results in the second layer of Polysilicon 20 having the lithographic openings 24 . This resultant structure is shown in FIG. 1 e.

[0015] The structure shown in FIG. 1 e is then oxidized or placed in an oxidizing atmosphere such as O ₂ alone or a mixture of H ₂ and O ₂ . This causes the second layer 20 of Polysilicon to be converted into silicon (di)oxide. As is well known, since silicon (di)oxide has larger molecular size than Polysilicon, the conversion of Polysilicon 20 into silicon (di)oxide causes the spacing or the opening 24 to shrink. This is due to the lateral expansion of the silicon (di)oxide when it is formed. As a result, a sublithographic opening is then created. The resultant structure is shown in FIG. 1 f.

[0016] Using the silicon (di)oxide layer 20 as the masking layer, the layer 18 of silicon nitride and the layer 16 of Polysilicon is then etched using anisotropic etching. The resultant structure is shown in FIG. 1 g in which sublithographic openings are created in the layer 18 of silicon nitride and the layer 16 of Polysilicon. The resultant structure is shown in FIG. 1 g.

[0017] Thereafter, the masking layer of silicon (di)oxide 20 can be removed as well as the silicon nitride layer 18 can be removed, resulting in the first layer 16 of Polysilicon with sublithographic openings 24 .

[0018] Referring to FIG. 2 a, there is shown a cross-sectional view of the first step in another method of creating a sublithographic opening in a material in a semiconductor process. Similar to the cross-sectional view shown in FIG. 1 a, the process begins with a semiconductor substrate of single crystalline silicon 10 with trench isolations 12 . Again, however, the use of trench isolations 12 is only for illustration purposes as the FIGS. 2 a - 2 f show the process of creating a floating gate of Polysilicon in a structure overlying shallow trench isolation 12 regions. However, the method of present invention is not so limited and can be used to create sublithographic openings in any material in a semiconductor process for any purpose.

[0019] A first layer of silicon (di)oxide 14 is then deposited on the surface of the substrate 10 . This can be a layer on the order of 50 angstroms and can be made by well known conventional techniques such as chemical vapor deposition or high temperature thermal deposition. The resultant structure is shown in FIG. 2 b.

[0020] A first layer 20 a of Polysilicon is then conformally deposited over the contour of the structure shown in FIG. 2 b. The first layer of Polysilicon 20 a can be deposited by conventional techniques such as chemical Vapor Deposition and may be deposited to a thickness of 1000 angstroms. The resultant structure is shown in FIG. 2 c.

[0021] Using conventional photoresist 22 (as shown in FIGS. 1 c and 1 d ), a lithographic opening 24 is created in the first layer 20 a of Polysilicon. However, the first layer of Polysilicon 20 a is not completely removed or etched from the lithographic opening 24 . In the preferred embodiment, about 90% of the thickness of the Polysilicon 20 a is removed from the opening 24 . The process of creating a lithographic opening 24 in the first Polysilicon layer 20 a results in residual Polysilicon in the lithographic opening 24 , as shown in FIG. 2 d.

[0022] A second layer 20 b of Polysilicon, which is the same material as the first layer 20 a, is then conformally deposited to the contour of the first layer 20 a of Polysilicon. The second layer 20 b of Polysilicon is on the order of 450 angstroms and may be deposited by Chemical Vapor Depostion. The result of the deposition process is the structure shown in FIG. 2 e. Thereafter, the structure shown in FIG. 2 e is anisotropically etched until all of the Polysilicon is etched from the opening 24 . This etching process causes the removal of the Polysilicon 20 a as well as the Polysilicon from the second layer 20 b that were deposited in the lithographic opening 24 . However, an amount of Polysilicon 20 b continues to line the sidewalls of the opening 24 to create a sublithographic opening 24 . The resultant structure is shown in FIG. 2 f.