Next Patent: Conductive polishing article for electrochemical mechanical polishing
Next Patent: Conductive polishing article for electrochemical mechanical polishing
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[0001] This application is a continuation of co-pending U.S. patent application Ser. No. 09/563,628 filed May 2, 2000, which claims benefit to U.S. Provisional Patent Application Serial No. 60,132,175 filed May 3, 1999, which are herein incorporated by reference.
[0002] 1. Field of the Invention
[0003] The inventions disclosed herein relate to fixed abrasive articles for chemical mechanical polishing (CMP). The present invention has particular applicability in manufacturing semiconductor devices.
[0004] 2. Description of the Related Art
[0005] Abrasive articles enjoy utility in a variety of industrial applications for abrading, finishing and polishing a variety of surfaces. Typical industrial uses of abrasive articles include polishing a substrate, as during various phases in manufacturing semiconductor devices and magnetic recording media. In manufacturing semiconductor devices, a wafer typically undergoes numerous processing steps, including deposition, patterning and etching. After various processing steps it is necessary to achieve a high level of surface planarity and uniformity to enable accurate photolithographic processing. A conventional planarization technique comprises polishing, as by CMP, wherein a wafer carrier assembly is rotated in contact with a polishing pad in a CMP apparatus. The polishing pad is mounted on a rotating/moving turntable or platen driven by an external driving force. The wafers are typically mounted on a carrier or polishing head which provides a controllable force, i.e., pressure, pressing the wafers against the rotating polishing pad. Thus, the CMP apparatus effects polishing or rubbing movement between the surface of each thin semiconductor wafer and the polishing pad while dispersing a polishing slurry containing abrasive particles in a reactive solution to effect both chemical activity and mechanical activity while applying a force between the wafer and a polishing pad.
[0006] Conventional polishing pads employed in abrasive slurry processing typically comprise a grooved porous polymeric surface, such as polyurethane, and the abrasive slurry varied in accordance with the particular material undergoing CMP. Basically, the abrasive slurry is impregnated into the pores of the polymeric surface while the grooves convey the abrasive slurry to the wafer undergoing CMP. A polishing pad for use in CMP slurry processing is disclosed by Krywanczyk et al. in U.S. Pat. No. 5,842,910. Typical CMP is performed not only on a silicon wafer itself, but on various dielectric layers, such as silicon oxide, conductive layers, such as aluminum and copper, or a layer containing both conductive and dielectric materials as in damascene processing.
[0007] A distinctly different type of abrasive article from the above-mentioned abrasive slurry-type polishing pad is a fixed abrasive article, e.g., fixed abrasive polishing sheet or pad. Such a fixed abrasive article typically comprises a backing with a plurality of geometric abrasive composite elements adhered thereto. The abrasive elements typically comprise a plurality of abrasive particles in a binder, e.g., a polymeric binder. During CMP employing a fixed abrasive article, the substrate or wafer undergoing CMP wears away the fixed abrasive elements thereby releasing the abrasive particles. Accordingly, during CMP employing a fixed abrasive article, a chemical agent is dispersed to provide the chemical activity, while the mechanical activity is provided by the fixed abrasive elements and abrasive particles released therefrom by abrasion with the substrate undergoing CMP. Thus, such fixed abrasive articles do not require the use of a slurry containing loose abrasive particles and advantageously simplify effluent treatment, reduce the cost of consumables and reduce dishing as compared to polishing pads that require an abrasive slurry. During CMP employing a fixed abrasive polishing pad, a chemical agent is applied to the pad, the agent depending upon the particular material or materials undergoing CMP. However, the chemical agent does not contain abrasive particles as in abrasive slurry-type CMP operations. Fixed abrasive articles are disclosed by Rutherford Et al. in U.S. Pat. No. 5,692,950, Calhoun in U.S. Pat. No. 5,820,450, Haas Et al. in U.S. Pat. No. 5,453,312 and Hibbard Et al. in U.S. Pat. No. 5,454,844, the entire disclosures of which are incorporated by reference herein.
[0008] Fixed abrasive elements are typically formed by filling recesses in an embossed carrier with a slurry comprising a plurality of abrasive grains dispersed in a hardening binder precursor and hardening the binder precursor to form individual abrasive composite elements that are laminated to a backing sheet and the embossed carrier removed. The backing sheet containing the individual abrasive composite elements adhered thereto is then typically mounted to a subpad containing a resilient element and a rigid element between the backing sheet and the resilient element Such mounting can be effected by any of various types of laminating techniques, including the use of an adhesive layer. Methods of forming a backing sheet containing fixed abrasive elements are disclosed by Calhoun in U.S. Pat. No. 5,437,754, the entire disclosure of which is incorporated by reference herein, and by Rutherford et al. in U.S. Pat. No. 5,692,950.
[0009] Fixed abrasive elements of conventional slurry-less type polishing pads are typically formed in various “positive” geometric configurations, such as a cylindrical, cubical, truncated cylindrical, and truncated pyramidal shapes, as disclosed by Calhoun in U.S. Pat. No. 5,820,450. Conventional fixed abrasive articles also comprise “negative” abrasive elements, such as disclosed by Ravipati et al. in U.S. Pat. No. 5,014,468, the entire disclosure of which is incorporated by reference herein.
[0010] During CMP, the surface of conventional polymeric polishing pads for abrasive-slurry type CMP operations becomes glazed thus nonreceptive to accommodating and/or dispensing the abrasive slurry and is otherwise incapable of polishing at a satisfactory rate and uniformity. Accordingly, conventional practices comprise periodically conditioning the pad surface so that it is maintained in a proper form for CMP. Conventional conditioning means comprises a diamond or silicon carbide (SiC) conditioning disk to conditioning the polishing pad. After repeated conditioning operations, the pad is eventually consumed and incapable of polishing at a satisfactory rate and uniformity. At this point, the polishing pad must be replaced. During replacement, the CMP apparatus is unavailable for polishing with an attendant significant decrease in production throughput.
[0011] On the other hand, fixed abrasive pads do not undergo the same type of adverse smoothing as do conventional polymeric pads. Moreover, a fixed abrasive pad has a low contact ratio (area of the tops of abrasive elements/total pad area), e.g., about 10% to about 20%, and short abrasive elements. Periodic pad conditioning with conventional CMP apparatus having a rotating round platen. Preconditioning would be expected to adversely affect the polishing rate and uniformity stability, i.e., wafer-to-wafer uniformity, since preconditioning with conventional diamond or SiC disks would be expected to render the pad surface significantly different from that caused by pad-wafer interactions. Accordingly, conventional practices on fixed abrasive pads do not involve preconditioning, i.e., prior to initial CMP, or periodic conditioning, after initial CMP. However, the use of fixed abrasive articles, such as polishing pads, disadvantageously results in poor wafer-to-wafer polishing rate stability on a CMP polisher having a rotating round platen or on a polisher with an advanceable polishing sheet at an indexing rate less than 0.5 to 1.0 inch per minute.
[0012] Copending U.S. application Ser. No. 09/244,456 filed Feb. 4, 1999 and assigned to the assignee of the present invention discloses a CMP apparatus having a rotatable platen, a polishing station with a generally linear polishing sheet having an exposed portion extending over a top surface of the platen for polishing the substrate, and a drive mechanism to incrementally advance the polishing sheet in a linear direction across a top surface of the platen. The polishing sheet is releasably seared to the platen to rotate with the platen, and it has a width greater than the diameter of the substrate. Thus, an unused portion of the polishing sheet is incrementally advanced or indexed after polishing a wafer, e.g., by exposing about 0.5 inch to about 1 inch per minute of virgin or unused polishing pad surface. In this way, wafer-to-wafer rate stability is improved. The entire disclosure of U.S. application Ser. No. 09/244,456 is hereby incorporated by reference herein. However, indexing of 0.5 to 1 inch per minute of pad significantly reduces the useful life of fixed abrasive polishing sheets, condemning them to the trash bin before the abrasive elements are consumed to any significant extent, thereby significantly increasing manufacturing costs.
[0013] Copending U.S. patent application Ser. No. 09/244,456 filed Feb. 4, 1999, now U.S. Pat. No. 6,244,935 issued on Jun. 12, 2001, and Continuation-In-Part of that patent application Ser. No. 09/302570 filed on Apr. 30, 1999, now U.S. Pat. No. 6,475,078 issued on Nov. 5, 2002 (Attorney Docket No.: 3486P1), each of which is assigned to the Assignee of the present invention, disclose a CMP polishing apparatus wherein polishing sheets, e.g., polishing sheets containing fixed abrasive elements, are moved in a linear direction during CMP. The entire disclosures of U.S. patent application Ser. No. 09/244,456 now U.S. Pat. No. 6,244,935 and of U.S. patent application Ser. No. 09/302570 now U.S. Pat. No. 6,475,078 (Attorney Docket No.: 3486P1) are incorporated herein by reference.
[0014] There exists a need to extend the useful life of a fixed abrasive article, e.g., polishing sheet or pad, while simultaneously maintaining high wafer-to-wafer rate stability. There also exists a need for a CMP apparatus enabling the use of fixed abrasive polishing pads having an extended life and achieving high wafer-to-wafer rate stability. There also exists a need for fixed abrasive articles, methods of manufacturing fixed abrasive articles, CMP apparatus employing fixed abrasive articles and CMP methods utilizing fixed abrasive articles which: enable a reduction in contamination during CMP; improving CMP as by facilitating web removal; avoid the formation of air bubbles under a fixed abrasive web; facilitate application of chemicals during CMP; tailoring a fixed abrasive article for use in a variety of substrate materials; reduce and/or eliminating indexing; dissipating heat during CMP; improve conformance of the polishing web during CMP; condition a fixed abrasive element; increase the amount of web material stored on a roll; monitor CMP; optimize the use of chemicals during CMP; optimize controlling CMP temperature; tailor the chemical agent during CMP; reduce particulates in the CMP effluent; detect and analyze effluent particles to determine their composition; control the particles in the effluent to reduce scratching and dishing; determine the useful lifetime of fixed abrasive elements during CMP; optimize the lifetime of a fixed abrasive web; optimize indexing; and generally improve the efficiency, increasing manufacturing throughput and reducing cost of CMP.
[0015] In one aspect the invention provides an article for polishing semiconductor substrates comprising a conductive material disposed in a binder.
[0016] In another aspect the invention provides an article for polishing a semiconductor substrate comprising graphite particles disposed in a polymeric binder.
[0017] In another aspect the invention provides an article for polishing a semiconductor substrate comprising graphite filaments disposed in a polymeric binder.
[0018] In another aspect the invention provides an article for polishing a semiconductor substrate comprising graphite rods disposed in a polymeric binder.
[0019] In another aspect the invention provides an article for polishing a semiconductor substrate comprising tin or lead particles disposed in a polymeric binder.
[0020] So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
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[0037] The inventions disclosed and claimed herein address and solve the foregoing problems thereby improving the efficiency and reducing the cost of CMP while maintaining improved wafer-to-wafer uniformity and, generally improving the quality of semiconductor devices. The inventions set forth herein are illustrated by the embodiments set forth hereinafter.
[0038] Embodiment No. 1
[0039] The inventive concept resides in providing a permeable web
[0040] A problem which arises during CMP is effective supplying chemicals underneath the wafer resulting in starvation at the wafer center. This would apply to both fixed abrasive and conventional slurry CMP. As the wafer rotates, a leading edge-trailing edge situation arises. But in any case, around the edge of the wafer at some point all of the different points on the edge get to be leading at some point and all of them get to be trailing at some point, but the center is always the center. The leading edge chemical concentrations are greater than the trailing edge chemical concentrations. There may be some depletion across the wafer during rotation and the wafer is rotating around the center of the wafer. Thus, the center of the wafer always experiences some medium chemical concentration. Accordingly, the chemical concentration is going up and down and up and down causing a very unstable situation. This problem is solved by providing a permeable abrasive pad so that the wafer sees a uniform concentration of chemicals everywhere. The web
[0041] Another advantage is that if air bubbles are trapped, by providing a non-flat surface to the abrasive, it would permeate out. The bottom
[0042] This arrangement is not incompatible with vacuum hold down, because by sucking it through a semipermeable membrane a pressure drop across the membrane occurs and this is what provides the necessary hold down, also referred to as conductance.
[0043] Aspects include patterns of vacuum channels on one part and chemical supply channels on another part. The vacuum hold down is, therefore, dispersed evenly enough to get a good hold down on a film without localized tearing. The chemistry supply would go up through the film with proper spacing of the air and chemical supply channels.
[0044] Embodiment No. 2
[0045] This invention entails impregnating the plastic matrix of a web
[0046] There are a number of different functions performed by the CMP chemistry, e.g., oxidizers, inhibitors, such as corrosion inhibitors, buffers, and chelating agents. Ergo, there are a number of different roles performed that vary somewhat, depending on the particular system, e.g., copper, tungsten or oxide. However, the concept of chemical impregnation would be the same.
[0047] For illustrative purposes, in a Cu system, the oxidizers attack the copper and oxidize it to get copper oxide. That performs two functions. Initially, a corrosion barrier is provided where there is no abrasion—it is self limiting where rubbing does not occur. Therefore, etching stops. But in the high spots the oxide is more prone to polish than the copper metal. Therefore, the oxide is polished and then reoxidized, polished, and then reoxided. The oxide is not a good enough barrier in the low spots, and that is why some corrosion inhibitors, e.g., BTA, are included to basically assist the oxidizer in capping the surface in the low spots where not undergoing polishing. The mechanical action of polishing on the high spots removes both the oxide layer and the inhibitor so that it initiates a fresh attack of the copper. Chemical buffers are employed to maintain the pH in the solution because these chemicals are pH active—it is an electrochemical type of a process which is dependent on pH. Chelating agents take the copper in the solution and maintain it in solution so that the material rubbed off is removed instead of redepositing on the wafer.
[0048] It is particularly advantageous to impregnate a buffer into the plastic matrix to maintain a desired pH. The buffer impregnated in the plastic matrix is continually supplied at the exact point needed—right at the point of polishing. Thus, any of the types of chemicals could be supplied into the posts, e.g., buffers, oxidizers, inhibitors, etc.
[0049] There are several advantages of putting the chemicals into the posts
[0050] The pad
[0051] Moreover, web manufacturers can determine how much chemicals to include, which is more controllable than depending on a technician to refurbish chemicals, since it is always going to be the same concentration depending on your manufacturability position, rather than what is going on in the field or if the equipment is breaking down.
[0052] Another aspect comprises introducing a chemical marker
[0053] Embodiment No. 3
[0054] This embodiment involves forming a fixed abrasive web
[0055] This embodiment solves the problem of process drift over time by tailoring a number of posts
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[0057] Later on in the process, copper
[0058] Varying the shape, height and diameter of the posts to obtain different structures or patterns can be easily implemented. Smaller posts
[0059] Embodiment No. 4
[0060] This invention includes the concept of varying the compressibility of the web
[0061] The inventive concept is that, as the wafer
[0062] Embodiment No. 5
[0063] Advantageously, a fixed abrasive polishing web comprising a heat dissipating material can overcome the problems associated with excess heat build-up during polishing. In an aspect of this embodiment, the heat dissipating substance is incorporated into the posts and/or associated backing sheet. Thermally conductive materials include a metal powder, e.g., iron, nickel, copper, zinc, tin, lead, silver, gold, titanium, tungsten, palladium, bismuth, indium, gallium, aluminum and alloys thereof; metallized polymers or metallized ceramics such as alumina, silica, glass, polyamide, polystyrene, polyetheramide, polyacetylene, polyphenylene, polyphenylene sulfide, polypyrol, polythiophene, and graphite. The conductive elements may be provided in many forms, such as for example, particles, wires, filaments, and metallized flakes. The elements may have a wide variety of regular and irregular shapes, as for example, spheres, rods, flakes, and filaments. The binder can be a thermoplastic or a thermo- setting-type polymer or a monomer which will polymerize to form the thermally conducted substrate having the thermally conducted element therein.
[0064] Embodiment No. 6
[0065] This embodiment relates to a fixed abrasive web comprising a plurality of elongated posts on a sheet. Conventional posts have a diameter of about 125 to 1,000 microns, with the diameter about twice the height. Accordingly, conventional posts extend up to 500 microns above the backing sheet. The present embodiment comprises forming posts
[0066] Advantageously, according to this embodiment, only a small amount of force is required to bend over the individual posts. However, the force would increase as the taller posts bend to contact each other any are stacked upon each other side by aide. At this point, the down force gets compressed. Aspects of this embodiment include forming posts
[0067] Embodiment No. 7
[0068] This embodiment comprises preconditioning fixed abrasive articles
[0069] Another aspect of the present invention comprises the use of a laser to precondition the posts
[0070] Embodiment No. 8
[0071] This invention relates to improvements with respect to in situ rate measurement (ISRM) devices. The ISRM device is a laser base device that shines a light
[0072] Embodiments of the present invention include abrasive particles
[0073] Embodiment No. 9
[0074] The invention resides in forming a fixed abrasive web with negative posts, as in U.S. Pat. No. 5,014,468 and incorporating chemicals in the negative recesses. Typically, the posts form about 10-25 percent of the surface of the pad, leaving at least about 75% as open channel, i.e., a connected phase employing terminology from percolation theory. The connected phase is the one connected all the way through. The open space is the connected phase; the posts are disconnected from one another. This embodiment reverses the conventional fixed abrasive pad by making the open space the disconnected phase and making the posts the connected phase, thereby maintaining the same relative amount of post area. However, a region can be walled off or damned, as by forming a hexagonal recess
[0075] Embodiment No. 10
[0076] This embodiment resides in proving a non-homogenous web
[0077] The wafer
[0078] Embodiment No. 11
[0079] The problem addressed by the present invention is that the conventional web backing material, i.e., believed to be a polyester-based material, sheds on abrasion. Frictional interaction between the platen and the web during advancement generates particles in the process. The solution to this problem resides providing a non-shedding backing material, such as a self-lubricating plastic. Such self-lubricating plastics are conventional.
[0080] Examples of self-lubricating polymers include fluorinated alkane, e.g., teflon, fluorinated polyethers. fluorinated polyesters, polyether ketones, e.g., PEEK, nylons, or acetal resins. Examples of self-lubricating polymeric compositions include a resin component and from about 30 wt. % to about 0.5 wt. % of a lubricating system. Resin components useful in the polymeric composition can be selected from polyamides, polyesters, polyphenylene sulfides, polyolefins, polyoxymethylenes, styrene polymers, and polycarbonates. The lubricating system of the present invention can be characterized as containing a lubricating amount, sufficient to reduce friction and wear, of the resin component and can include polytetrafluorethylene, stearates, and calcium carbonates. Many other materials, including solid lubricants and fibers, e.g., graphite, mica, silica, talc, boron nitride and molybdenum sulfide, paraffin waxes, petroleum and synthetic lubricating oils, and other polymers, e.g., polyethylene and polytetrafluorethylene, can be added to the resin component to improve friction properties.
[0081] Embodiment No. 12
[0082] This invention provides a safety technique to determine when the posts are consumed. Embodiments include incorporating a tracer component, such as an inert chemical, to provide a warning as to the number of wafers capable of being polished by the partially consumed web
[0083] Some indicators are higher than the surrounding, to indicate the end of the CMP process. When the indicator or bar
[0084] Embodiment No. 13
[0085] This invention resides in providing a mechanical means, such as a notch
[0086] Embodiment No. 14
[0087] The invention resides in coding the web throughout its length to enable determining the location of different portions of the web. Bar codes or a number readable with optical character recognition can be used. Little holes can be punched through to provide a detectable pattern. Any type of encoding along the length of the web can be provided and read with an appropriate type of sensor. The inventive concept involves encoding the location along the length of the web. There are at least two benefits. One is real time feedback and any kind of motion control. For example, the length of a moving web is determined with feed back control to activate a command signal to advance the web. A second benefit is that the amount of web advanced can be read. This enables: (1) good tracking of wafers polished to location on web; and (2) determination of the proximity to the end of the web and alarm for an operator to replace the web.
[0088] Embodiment No. 15
[0089] A thin monolayer, e.g., one millimeter, of diamond is formed on the web posts containing silicon carbide particles, and chemical preconditioned to remove about 500 Å of matrix from the top of the posts to expose the diamonds, as by chemical preconditioning using heat or solvent to selectively remove the matrix.
[0090] This embodiment advantageously prolongs the wear rate of the web through the use of superabrasive, a term used in the industry for a very hard material, e.g., diamond, or cubic boronitride. The wear rate of the posts are reduced to the extent that they don't change appreciatively over time, thereby improving CMP uniformity.
[0091] Embodiment 16
[0092] This invention resides in providing perforations in the sides or end of the web for improved handling. Rolls can be provided with sprockets to engage the perforations.
[0093] The present invention is applicable to all types of fixed abrasive articles, including rotating polishing pads that are substantially circular and substantially rectangular polishing sheets. The present invention provides wafer-to-wafer rate stability for CMP and can be employed during various phases of semiconductor device manufacturing. The present invention, therefore, enjoys utility in various industrial applications, particularly in CMP in the semiconductor industry as well as the magnetic recording media industry.
[0094] Only the preferred embodiments of the present invention and but a few examples of its versatility are shown and described in the present disclosure. It is to be understood that the present invention is capable of use in various other combinations and environments and is capable of changes and modifications within the scope of the inventive concept as expressed herein.
[0095] While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.